RU2006143538A - METHOD OF REACTIVE ION ETCHING IN MICROTECHNOLOGY OF HIDDEN CHANNELS IN SILICON - Google Patents

METHOD OF REACTIVE ION ETCHING IN MICROTECHNOLOGY OF HIDDEN CHANNELS IN SILICON Download PDF

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Publication number
RU2006143538A
RU2006143538A RU2006143538/28A RU2006143538A RU2006143538A RU 2006143538 A RU2006143538 A RU 2006143538A RU 2006143538/28 A RU2006143538/28 A RU 2006143538/28A RU 2006143538 A RU2006143538 A RU 2006143538A RU 2006143538 A RU2006143538 A RU 2006143538A
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RU
Russia
Prior art keywords
reactive ion
ion etching
microtechnology
silicon
reactor
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RU2006143538/28A
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Russian (ru)
Inventor
Сергей Васильевич Кузьмин (RU)
Сергей Васильевич Кузьмин
Владимир Михайлович Малышев (RU)
Владимир Михайлович Малышев
Original Assignee
Общество с ограниченной ответственностью ООО "Юник Ай Сиз" (RU)
Общество с ограниченной ответственностью ООО "Юник Ай Сиз"
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Application filed by Общество с ограниченной ответственностью ООО "Юник Ай Сиз" (RU), Общество с ограниченной ответственностью ООО "Юник Ай Сиз" filed Critical Общество с ограниченной ответственностью ООО "Юник Ай Сиз" (RU)
Priority to RU2006143538/28A priority Critical patent/RU2006143538A/en
Publication of RU2006143538A publication Critical patent/RU2006143538A/en

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Abstract

1. Способ реактивного ионного травления в микротехнологии скрытых каналов в кремнии, включающий формирование в реакторе плазмы реактивного ионного травления на базе SF, увеличение расхода SF, повышение температуры подложки выше 25°С, отличающийся тем, что увеличивают плотность плазмы в реакторе, используя источник индуктивно связанной плазмы (ICP).2. Способ по п.1, отличающийся тем, что увеличение плотности плазмы в реакторе производят в интервале 10÷ 10см.1. The method of reactive ion etching in the microtechnology of hidden channels in silicon, including the formation of a reactive ion etching plasma based on SF, increasing the consumption of SF, increasing the temperature of the substrate above 25 ° C, characterized in that the plasma density in the reactor is increased using an inductively source bound plasma (ICP) .2. The method according to claim 1, characterized in that the increase in plasma density in the reactor is carried out in the range of 10 ÷ 10 cm.

Claims (2)

1. Способ реактивного ионного травления в микротехнологии скрытых каналов в кремнии, включающий формирование в реакторе плазмы реактивного ионного травления на базе SF6, увеличение расхода SF6, повышение температуры подложки выше 25°С, отличающийся тем, что увеличивают плотность плазмы в реакторе, используя источник индуктивно связанной плазмы (ICP).1. The method of reactive ion etching in the microtechnology of hidden channels in silicon, including the formation in the reactor plasma of reactive ion etching based on SF 6 , increasing the consumption of SF 6 , increasing the temperature of the substrate above 25 ° C, characterized in that they increase the plasma density in the reactor using Inductively coupled plasma source (ICP). 2. Способ по п.1, отличающийся тем, что увеличение плотности плазмы в реакторе производят в интервале 1010 ÷ 1011 см-3.2. The method according to claim 1, characterized in that the increase in plasma density in the reactor is carried out in the range of 10 10 ÷ 10 11 cm -3 .
RU2006143538/28A 2006-12-08 2006-12-08 METHOD OF REACTIVE ION ETCHING IN MICROTECHNOLOGY OF HIDDEN CHANNELS IN SILICON RU2006143538A (en)

Priority Applications (1)

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RU2006143538/28A RU2006143538A (en) 2006-12-08 2006-12-08 METHOD OF REACTIVE ION ETCHING IN MICROTECHNOLOGY OF HIDDEN CHANNELS IN SILICON

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RU2006143538/28A RU2006143538A (en) 2006-12-08 2006-12-08 METHOD OF REACTIVE ION ETCHING IN MICROTECHNOLOGY OF HIDDEN CHANNELS IN SILICON

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RU2006143538A true RU2006143538A (en) 2008-06-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU201717U1 (en) * 2020-03-24 2020-12-29 Екатерина Вячеславовна Ендиярова SUPPORT FOR PLASMA CHEMICAL ETCHING IN LOW-TEMPERATURE INDUCTIVE-COUPLED PLASMA

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU201717U1 (en) * 2020-03-24 2020-12-29 Екатерина Вячеславовна Ендиярова SUPPORT FOR PLASMA CHEMICAL ETCHING IN LOW-TEMPERATURE INDUCTIVE-COUPLED PLASMA

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Effective date: 20080710