RU2006134588A - DEVICE FOR THE APPLICATION OF THIN FILMS OF SEMICONDUCTORS AND DIELECTRICS - Google Patents
DEVICE FOR THE APPLICATION OF THIN FILMS OF SEMICONDUCTORS AND DIELECTRICS Download PDFInfo
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- RU2006134588A RU2006134588A RU2006134588/02A RU2006134588A RU2006134588A RU 2006134588 A RU2006134588 A RU 2006134588A RU 2006134588/02 A RU2006134588/02 A RU 2006134588/02A RU 2006134588 A RU2006134588 A RU 2006134588A RU 2006134588 A RU2006134588 A RU 2006134588A
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- base
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- semiconductors
- thin films
- gap
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- Chemical Vapour Deposition (AREA)
Abstract
1. Устройство для нанесения тонких пленок полупроводников и диэлектриков методом Молекулярного Наслаивания (МН) - Atomic Layer Deposition (ALD), содержащее реактор, рабочая часть внутреннего пространства которого имеет форму цилиндра, внутри реактора расположены подложка для нанесения пленок, система напуска реагентов и буферных газов, а также нагревательные элементы, отличающееся тем, что подложка вращается относительно неподвижного основания, а зазор между рабочей поверхностью подложки и основанием позволяет избежать их взаимного касания, вращение подложке передается с помощью подвижной муфты, устанавливаемой на валу двигателя, закрепленного не жестко, величина зазора регулируется изменением давления буферного газа в этом зазоре, противодействующего весу муфты, рабочие поверхности основания и подложки выполнены плоскими и гладкими и имеют форму круга равного диаметра, ось вращения подложки совпадает с ее центром, в рабочей поверхности основания расположены углубления, длина которых не превышает радиуса рабочей поверхности основания, в углублениях располагаются отверстия для напуска реагентов в зазор.2. Устройство для нанесения тонких пленок полупроводников и диэлектриков по п.1, отличающееся тем, что основание и подложка выполнены из материала с близким коэффициентом температурного расширения.3. Устройство для нанесения тонких пленок полупроводников и диэлектриков по п.2, отличающееся тем, что рабочая поверхность основания выполнена полированной.4. Устройство для нанесения тонких пленок полупроводников и диэлектриков по п.3, отличающееся тем, что основание выполнено из особо чистого графита или другого мат�1. Atomic Layer Deposition (ALD) device for applying thin films of semiconductors and dielectrics using the Molecular Layering (MN) method, which contains a reactor, the working part of the inner space of which is in the form of a cylinder, a substrate for applying films, a reagent and buffer gas injection system are located inside the reactor , as well as heating elements, characterized in that the substrate rotates relative to the fixed base, and the gap between the working surface of the substrate and the base avoids their mutual contact, is rotated It is transferred to the substrate by means of a movable coupling mounted on the motor shaft, which is not rigidly fixed, the gap is controlled by changing the pressure of the buffer gas in this gap, which counteracts the coupling weight, the working surfaces of the base and substrate are made flat and smooth and have a circle shape of equal diameter, rotation axis of the substrate coincides with its center, in the working surface of the base there are recesses, the length of which does not exceed the radius of the working surface of the base, holes are located in the recesses I'm letting reagents into the gap. 2. A device for applying thin films of semiconductors and dielectrics according to claim 1, characterized in that the base and substrate are made of a material with a similar coefficient of thermal expansion. A device for applying thin films of semiconductors and dielectrics according to claim 2, characterized in that the working surface of the base is polished. A device for applying thin films of semiconductors and dielectrics according to claim 3, characterized in that the base is made of highly pure graphite or another material
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2006134588/02A RU2331717C2 (en) | 2006-10-02 | 2006-10-02 | Device for thin film coating of semi-conductors and dielectrics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU2006134588/02A RU2331717C2 (en) | 2006-10-02 | 2006-10-02 | Device for thin film coating of semi-conductors and dielectrics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU2006134588A true RU2006134588A (en) | 2008-04-10 |
| RU2331717C2 RU2331717C2 (en) | 2008-08-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2006134588/02A RU2331717C2 (en) | 2006-10-02 | 2006-10-02 | Device for thin film coating of semi-conductors and dielectrics |
Country Status (1)
| Country | Link |
|---|---|
| RU (1) | RU2331717C2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2494037C1 (en) * | 2012-04-27 | 2013-09-27 | Закрытое акционерное общество "Натотехнология МДТ" | Method of production of atomic-thin single-crystalline films |
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2006
- 2006-10-02 RU RU2006134588/02A patent/RU2331717C2/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| RU2331717C2 (en) | 2008-08-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20081003 |
|
| NF4A | Reinstatement of patent |
Effective date: 20100420 |
|
| MM4A | The patent is invalid due to non-payment of fees |
Effective date: 20141003 |