RU2006114153A - PROBE DEVICE - Google Patents

PROBE DEVICE Download PDF

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Publication number
RU2006114153A
RU2006114153A RU2006114153/28A RU2006114153A RU2006114153A RU 2006114153 A RU2006114153 A RU 2006114153A RU 2006114153/28 A RU2006114153/28 A RU 2006114153/28A RU 2006114153 A RU2006114153 A RU 2006114153A RU 2006114153 A RU2006114153 A RU 2006114153A
Authority
RU
Russia
Prior art keywords
probe device
probe
electrically conductive
zone
working
Prior art date
Application number
RU2006114153/28A
Other languages
Russian (ru)
Other versions
RU2313776C1 (en
Inventor
Владимир Давыдович Бланк (RU)
Владимир Давыдович Бланк
Кирилл Валерьевич Гоголинский (RU)
Кирилл Валерьевич Гоголинский
Владимир Николаевич Решетов (RU)
Владимир Николаевич Решетов
Александр Игоревич Сошников (RU)
Александр Игоревич Сошников
Сергей Александрович Терентьев (RU)
Сергей Александрович Терентьев
Original Assignee
Федеральное государственное учреждение "Технологический институт сверхтвердых и новых углеродных материалов" (ФГУ ТИСНУМ) (RU)
Федеральное государственное учреждение "Технологический институт сверхтвердых и новых углеродных материалов" (ФГУ ТИСНУМ)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Федеральное государственное учреждение "Технологический институт сверхтвердых и новых углеродных материалов" (ФГУ ТИСНУМ) (RU), Федеральное государственное учреждение "Технологический институт сверхтвердых и новых углеродных материалов" (ФГУ ТИСНУМ) filed Critical Федеральное государственное учреждение "Технологический институт сверхтвердых и новых углеродных материалов" (ФГУ ТИСНУМ) (RU)
Priority to RU2006114153/28A priority Critical patent/RU2313776C1/en
Publication of RU2006114153A publication Critical patent/RU2006114153A/en
Application granted granted Critical
Publication of RU2313776C1 publication Critical patent/RU2313776C1/en

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Claims (2)

1. Зондовое устройство для измерения электрических параметров материалов, содержащее основание и электропроводящий зонд с рабочей заостренной контактирующей зоной, отличающееся тем, что электропроводящий зонд с рабочей заостренной зоной выполнен из легированного электропроводящего алмаза.1. A probe device for measuring the electrical parameters of materials, containing a base and an electrically conductive probe with a working pointed contact zone, characterized in that the electrically conductive probe with a working pointed zone is made of alloyed conductive diamond. 2. Зондовое устройство по п.1, отличающееся тем, что в качестве легирующей примеси используют, например, бор, азот, мышьяк, фосфор, галлий, индий.2. The probe device according to claim 1, characterized in that, for example, boron, nitrogen, arsenic, phosphorus, gallium, indium are used as the dopant.
RU2006114153/28A 2006-04-27 2006-04-27 Sound arrangement RU2313776C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2006114153/28A RU2313776C1 (en) 2006-04-27 2006-04-27 Sound arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2006114153/28A RU2313776C1 (en) 2006-04-27 2006-04-27 Sound arrangement

Publications (2)

Publication Number Publication Date
RU2006114153A true RU2006114153A (en) 2007-11-10
RU2313776C1 RU2313776C1 (en) 2007-12-27

Family

ID=38957959

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2006114153/28A RU2313776C1 (en) 2006-04-27 2006-04-27 Sound arrangement

Country Status (1)

Country Link
RU (1) RU2313776C1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107144483A (en) * 2017-05-11 2017-09-08 兰州大学 A kind of many test systems of the nano impress based on liquid nitrogen refrigerating

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU172838U1 (en) * 2017-03-06 2017-07-26 Закрытое акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" DEVICE FOR PROBE CONTROL OF CRYSTAL PARAMETERS OF HIGH VOLTAGE DEVICES
RU175327U1 (en) * 2017-06-05 2017-11-30 Закрытое акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" DEVICE FOR PROBE CONTROL OF HIGH VOLTAGE CRYSTALS ON A PLATE
RU180846U1 (en) * 2018-03-22 2018-06-28 Закрытое акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" PROBE FOR PROBE CONTROL OF HIGH VOLTAGE CRYSTALS ON A PLATE

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107144483A (en) * 2017-05-11 2017-09-08 兰州大学 A kind of many test systems of the nano impress based on liquid nitrogen refrigerating
CN107144483B (en) * 2017-05-11 2023-10-03 兰州大学 Nanometer indentation multi-field test system based on liquid nitrogen refrigeration

Also Published As

Publication number Publication date
RU2313776C1 (en) 2007-12-27

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