RU2004105093A - METHOD FOR PRODUCING HETEROSTRUCTURE N-INSB-SIO2-P-SI - Google Patents

METHOD FOR PRODUCING HETEROSTRUCTURE N-INSB-SIO2-P-SI Download PDF

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Publication number
RU2004105093A
RU2004105093A RU2004105093/28A RU2004105093A RU2004105093A RU 2004105093 A RU2004105093 A RU 2004105093A RU 2004105093/28 A RU2004105093/28 A RU 2004105093/28A RU 2004105093 A RU2004105093 A RU 2004105093A RU 2004105093 A RU2004105093 A RU 2004105093A
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RU
Russia
Prior art keywords
heterostructure
insb
producing
sio2
sio
Prior art date
Application number
RU2004105093/28A
Other languages
Russian (ru)
Inventor
Юрий Анатольевич Никольский (RU)
Юрий Анатольевич Никольский
Сергей Евгеньевич Зюзин (RU)
Сергей Евгеньевич Зюзин
Ирина Михайловна Кот (RU)
Ирина Михайловна Кот
Любовь Александровна Плешакова (RU)
Любовь Александровна Плешакова
Original Assignee
Юрий Анатольевич Никольский (RU)
Юрий Анатольевич Никольский
Сергей Евгеньевич Зюзин (RU)
Сергей Евгеньевич Зюзин
Ирина Михайловна Кот (RU)
Ирина Михайловна Кот
Любовь Александровна Плешакова (RU)
Любовь Александровна Плешакова
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Юрий Анатольевич Никольский (RU), Юрий Анатольевич Никольский, Сергей Евгеньевич Зюзин (RU), Сергей Евгеньевич Зюзин, Ирина Михайловна Кот (RU), Ирина Михайловна Кот, Любовь Александровна Плешакова (RU), Любовь Александровна Плешакова filed Critical Юрий Анатольевич Никольский (RU)
Priority to RU2004105093/28A priority Critical patent/RU2004105093A/en
Publication of RU2004105093A publication Critical patent/RU2004105093A/en

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Claims (1)

Способ получения гетероструктуры n-InSb-SiO2-p-Si, отличающийся тем, что гетероструктура приготовлена путем расплавления кристаллика n-InSb на подложке SiO2-p-Si с последующим растеканием капли до толщины ~10÷20 мкм под действием силы тяжести массивного груза.A method for producing an n-InSb-SiO 2 -p-Si heterostructure, characterized in that the heterostructure is prepared by melting an n-InSb crystal on a SiO 2 -p-Si substrate, followed by spreading of the droplet to a thickness of ~ 10 ÷ 20 μm under the influence of massive gravity cargo.
RU2004105093/28A 2004-02-20 2004-02-20 METHOD FOR PRODUCING HETEROSTRUCTURE N-INSB-SIO2-P-SI RU2004105093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2004105093/28A RU2004105093A (en) 2004-02-20 2004-02-20 METHOD FOR PRODUCING HETEROSTRUCTURE N-INSB-SIO2-P-SI

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2004105093/28A RU2004105093A (en) 2004-02-20 2004-02-20 METHOD FOR PRODUCING HETEROSTRUCTURE N-INSB-SIO2-P-SI

Publications (1)

Publication Number Publication Date
RU2004105093A true RU2004105093A (en) 2005-07-27

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Family Applications (1)

Application Number Title Priority Date Filing Date
RU2004105093/28A RU2004105093A (en) 2004-02-20 2004-02-20 METHOD FOR PRODUCING HETEROSTRUCTURE N-INSB-SIO2-P-SI

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RU (1) RU2004105093A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2642879C1 (en) * 2016-12-19 2018-01-29 Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук (ИФП СО РАН) METHOD OF PREPARING SURFACE OF InSb SUBSTRATE FOR HETEROSTRUCTURE CULTIVATION BY METHOD OF MOLECULAR-BEAM EPITAXY

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2642879C1 (en) * 2016-12-19 2018-01-29 Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук (ИФП СО РАН) METHOD OF PREPARING SURFACE OF InSb SUBSTRATE FOR HETEROSTRUCTURE CULTIVATION BY METHOD OF MOLECULAR-BEAM EPITAXY

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FA93 Acknowledgement of application withdrawn (no request for examination)

Effective date: 20070221