RU2003111439A - ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT CMOS - Google Patents

ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT CMOS Download PDF

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Publication number
RU2003111439A
RU2003111439A RU2003111439/09A RU2003111439A RU2003111439A RU 2003111439 A RU2003111439 A RU 2003111439A RU 2003111439/09 A RU2003111439/09 A RU 2003111439/09A RU 2003111439 A RU2003111439 A RU 2003111439A RU 2003111439 A RU2003111439 A RU 2003111439A
Authority
RU
Russia
Prior art keywords
protection circuit
electrostatic discharge
discharge protection
mos transistor
channel mos
Prior art date
Application number
RU2003111439/09A
Other languages
Russian (ru)
Inventor
Николай Алексеевич Подопригора (RU)
Николай Алексеевич Подопригора
Иль Сергеевич Курдюков (RU)
Илья Сергеевич Курдюков
Артур Гини тович Сибагатуллин (RU)
Артур Гиниятович Сибагатуллин
Original Assignee
Общество с ограниченной ответственностью "Юник Ай Сиз" (RU)
Общество с ограниченной ответственностью "Юник Ай Сиз"
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Общество с ограниченной ответственностью "Юник Ай Сиз" (RU), Общество с ограниченной ответственностью "Юник Ай Сиз" filed Critical Общество с ограниченной ответственностью "Юник Ай Сиз" (RU)
Priority to RU2003111439/09A priority Critical patent/RU2003111439A/en
Publication of RU2003111439A publication Critical patent/RU2003111439A/en

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Claims (1)

Схема защиты КМОП-схем от электростатических разрядов через контактные площадки, включающая n-канальный МОП транзистор, затвором и подложкой подключенный к общей шине, а стоком - к входной контактной площадке, к которой истоком подключен p-канальный МОП транзистор, затвор и подложка которого подключены к шине питания, отличающаяся тем, что исток n-канального МОП транзистора подключен к шине питания, а сток p-канального МОП транзистора подключен к общей шине.The circuit for protecting CMOS circuits from electrostatic discharges through contact pads, including an n-channel MOS transistor connected to a common bus with a gate and a substrate, and to an input contact pad to which a p-channel MOS transistor is connected to the source, whose gate and substrate are connected to the power bus, characterized in that the source of the n-channel MOS transistor is connected to the power bus, and the drain of the p-channel MOS transistor is connected to the common bus.
RU2003111439/09A 2003-04-22 2003-04-22 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT CMOS RU2003111439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2003111439/09A RU2003111439A (en) 2003-04-22 2003-04-22 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT CMOS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2003111439/09A RU2003111439A (en) 2003-04-22 2003-04-22 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT CMOS

Publications (1)

Publication Number Publication Date
RU2003111439A true RU2003111439A (en) 2004-11-20

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Family Applications (1)

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RU2003111439/09A RU2003111439A (en) 2003-04-22 2003-04-22 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT CMOS

Country Status (1)

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RU (1) RU2003111439A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2467431C1 (en) * 2011-04-12 2012-11-20 Открытое акционерное общество "АНГСТРЕМ" Device for protecting leads of complementary mos (metal-oxide-semiconductor) integrated circuits on sos (silicon-on-sapphire) and soi (silicon-on-insulator) structures from static electric discharges
RU2488191C1 (en) * 2009-06-09 2013-07-20 Шарп Кабусики Кайся Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2488191C1 (en) * 2009-06-09 2013-07-20 Шарп Кабусики Кайся Semiconductor device
RU2467431C1 (en) * 2011-04-12 2012-11-20 Открытое акционерное общество "АНГСТРЕМ" Device for protecting leads of complementary mos (metal-oxide-semiconductor) integrated circuits on sos (silicon-on-sapphire) and soi (silicon-on-insulator) structures from static electric discharges

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Legal Events

Date Code Title Description
FA92 Acknowledgement of application withdrawn (lack of supplementary materials submitted)

Effective date: 20050125