RU1835617C - Rectifying power block with evaporation cooling system - Google Patents

Abstract

Field of use of the invention: the invention relates to electrical engineering, in particular to semiconductor technology, and can be used in static converters of electrical energy. SUMMARY OF THE INVENTION: in order to increase maintainability, reduce the mass and size of a unit in a power rectifier unit with evaporative cooling, power semiconductor devices 1 are located between individual 2 and group 8 heat sinks and connected

Description

S As / /.

 1 S S.

I

8

 ishiiiii

L

-c

-5

With

WITH

t

about

SLE

with about

Figure 1

interconnected by a common group clamping device, consisting of a rectangular bracket 4 and clamping screws 5. Power semiconductor devices 1, heat sinks 2 and 3, the clamping device are immersed in a liquid intermediate coolant 6, with which the hermetic container 7 is partially filled. At the top of the hermetic container , there is a water condenser 8 outside the medium medium. For the electrical isolation of semiconductor devices from the clamping device, disk insulators 9 are used. The invention relates to an electrot nick, namely to semiconductor technology, and may be used in static converters of electric energy.

The aim of the invention is to increase the maintainability of a power rectifier unit with evaporative cooling, and to reduce the weight and size of the unit.

This goal is achieved in that a power rectifier unit with evaporative cooling, containing a sealed container filled with a liquid intermediate coolant, a condenser, power semiconductor devices of the tablet type, location in vertical and horizontal rows of the unit, are placed between grouped silver heatsinks on the one hand and individual silver heat sinks on the other hand (between devices in horizontal rows). Devices with group and individual heat sinks are connected using a single, group clamping device for all devices of the rectifier unit. Individual heat sinks are made in the form of cylindrical elements with a diameter equal to the diameter of the contact surfaces of the bases of the power semiconductor devices of the tablet type, and silver rings of constant cross-section. Group heat sinks are fins with straight vertical ribs of constant cross section. Thus, the annular ribs of individual heat sinks and straight vertical ribs of group heat sinks are located in mutually perpendicular planes and form vertical intercostal channels, and the ratio of the areas of silver surfaces of an individual and group heat sink is described by the following expression:

dual heat sinks 2 are made in the form of cylindrical elements with a diameter equal to the diameter of the contact surfaces of the bases of the devices, scraped by annular ribs. Group heat sinks 3 are scrapped with straight vertical ribs of constant cross-section. Ring ribs of individual heat sinks and straight ribs of group heat sinks are located in mutually perpendicular planes and form vertical intercostal channels. 1 s.p. f-ly, 2 ill.

Fop.G. --P Fop.and

where F0p.g. the silver surface area of the group heat sink, m;

Fop.и - the area of the silver surface of an individual heat sink, m2;

n is the number of power semiconductor devices in one vertical row of the block.

The invention is illustrated by drawings.

FIG. 1 and 2. Power semiconductor devices 1 are located between individual 2 and group 3 heat sinks and are interconnected by a common group clamping device, consisting of

rectangular brackets 4 and clamping screws 5. Power semiconductor devices 1, heat sinks 2 and 3, the clamping device are immersed in a liquid intermediate coolant 6, which partially

hermetic container is filled 7. At the top of the hermetic container, outside the medium of the intermediate heat carrier there is a water condenser 8. For insulating the semiconductor devices from the clamping device, disk insulators 9 are used. Individual heat sinks 2 are made in the form of cylindrical elements with a diameter equal to the diameter of the contact surfaces of the bases appliances

silver ring ribs. Group heat sinks 3 are fins with straight vertical ribs of constant cross-section. The annular ribs of the individual heat sinks and the straight ribs of the group heat sinks are located in

mutually perpendicular planes and form vertical intercostal canals.

The device operates as follows: a power rectifier block with evaporative cooling, for example, assembled according to a three-phase symmetrical bridge rectification circuit (Fig. 1) works as follows: power semiconductor devices 1. located in vertical rows, when an electric current passes through them , the heat loss power is released. The heat power, due to the symmetry of the design of the devices, is distributed equally to the anode and cathode bases and further from one base to an individual heat sink 2, from another to a group heat sink 3, Further, the heat flux due to boiling and vaporization is transferred to the intermediate heat carrier 6, for example, freon 113, with which the sealed container 7 is filled. The vapor of freon 113 rises upward, reaches the condenser 8, condenses on its surface, condensate flows back into the liquid volume. The fins of the group and individual heat sinks are oriented in mutually perpendicular planes in such a way that they form the vertical channels necessary for more efficient heat transfer between the heat sinks and the intermediate heat transfer medium. In addition, only such mutual orientation of the ribs allows a compressive force to be applied to devices located in horizontal rows using a single clamping device. In order for heat to be uniformly removed from each power semiconductor device toward the anode and cathode, the thermal resistance of the heat sinks from the anode and cathode must be the same. Therefore, the thermal resistance of a group heat sink working with one vertical row of devices should be so many times less than one individual heat sink, how many individual heat sinks will work with the same vertical row, that is, how many devices in one vertical row:

RTm tn Ktn

G.t

where Rtr is the thermal resistance of the group heat sink, ° C / W:

RthM T thermal resistance of an individual heat sink, ° С / W;

n is the number of instruments in one vertical row.

Taking into account that the value of the thermal resistance of the silver heatsinks and the area of their fins are related

Rtn

1

Fop

The values of the fin area of the group heat sink and individual heat sink should be related by the following expression

city

 P

or.i.

. 5 10 15. 20 25 0 5 0

5

5

In the event of failure of one power semiconductor device by loosening the corresponding clamping screw 5, the device is released from the compressive force and is removed from the heat sinks located inside the rectangular bracket 4.

The use of this invention when creating power semiconductor converting devices with evaporative cooling can significantly reduce the weight and size of units. In addition, there is an economic effect due to a reduction in the repair time of transducers at the operation sites.

Claims (2)

1. Power evaporative cooling rectifier unit containing a sealed container partially filled with a liquid intermediate heat carrier, a condenser placed in a sealed container, tablet-type semiconductor devices located in a sealed container in a liquid intermediate heat carrier, assembled in parallel columns with alternating individual silver ones heat sinks and connected with them by individual clamping elements, so that. that, in order to increase maintainability and improve overall dimensions, it is equipped with a group heat sink with annular ribs and a group clamping unit, the ribs of individual heat sinks are made straight, while the columns of semiconductor devices with alternating individual heat sinks are oriented by their longitudinal geometric axis parallel to the bottom of the sealed container, individual clamping elements are installed on the group clamping unit, and the shortened posts are placed on the group heat sink and fixed on it by means of a group clamping unit, and the annular ribs of the group heat sink and the straight ribs of the individual heat sinks are located in mutually perpendicular planes with the formation of intercostal channels between them, oriented by their longitudinal geometric axes along the longitudinal geometric axis of the sealed container. 2. The block according to claim 1. of the letter and with. the fact that the areas F0p.r and Fop and the silver surfaces of the individual and group heat sinks, respectively, have the following ratio: org or.i. where n is the number of power semiconductor devices in one package. MA Figure 1