RU1826125C - Device with s-type current-voltage characteristic - Google Patents

Abstract

The invention relates to electronic equipment. The goal is to increase the temperature stability of the device. For this purpose, the third, fourth and fifth n-p-n-type transistors are introduced into the device. The device allows to obtain thermostabilized in a large temperature range and widely variable negative differential resistance. 3 ill.

Description

The invention relates to electronic equipment and can be used as an element in devices of analog and pulse technology operating in a wide temperature range.

The purpose of the invention is to increase the temperature stability of the device.

In FIG. 1 shows a diagram of a device with an S-type current-voltage characteristic; in FIG. 2 - volt-ampere characteristic of the S-type; in FIG. 3 a - current-voltage characteristics of the S-type non-thermostabilized device, where the broken OABS is indicated in the AX of the S-type device at a temperature of T0 + 20 ° C; OMNP - IV characteristics of the device at temperature Т Т0 + ДТ, (where ДТ - temperature increment); in FIG. 3 b - current-voltage characteristics of a thermostabilized device, where the broken OAMN is the I – V characteristic of the device at a temperature T0 + 20 ° C, the broken OFKN is the I – V characteristic of the device at a temperature T T0 + DT.

In FIG. 1, the following notation is adopted:

1, 8, 9, 10, 11 - transistors pnpn type;

2,7-pnp transistors;

3 - the first output bus;

4 - second output bus;

5, 12, 13, 14, 15, 16-resistors;

6 is the positive pole of the power source.

A device with an S-type current-voltage characteristic, comprising an npn-type transistor 1 and a pnp-type transistor 2 connected between two output buses 3, 4 and a first resistor 5 between the output bus 3 and the corresponding positive pole of the power supply 6, In addition, a second pnp type transistor 7, a second 8, a third 9, a fourth 10, a fifth 11 npn type transistors and a second 12, a third 13, a fourth 14, a fifth 15 and a sixth 16 resistors are introduced into the device. In this case, the emitter of the second pnp type transistor 7 is connected to the first output bus 3. Its collector and base are interconnected and connected to the base of the first pnp type transistor 2, and also to the collector of the second npn type transistor 8 and the second resistor 12. The second end of the resistor 12 is connected to the base of the second npn type transistor 8, at the first end of the third resistor 13 and the collectors of the first pnn type transistor 2 and the third npn type transistor 9. Emitter of the second

00

Yu

Qs

the n-pn type transistor 8 is connected to the second end of the third resistor 13, the base of the third n-pn type transistor 9, and the collector of the first pnp type transistor 1. The emitter of the third pnp type transistor 9 is connected to the collector and the base of the fourth n-p-n-type transistor 10 and the base of the first n-p-n-type transistor 1. The emitter of the fourth npn type transistor 10 is connected to the emitter of the first npn type transistor 1 and the fourth resistor 14, the second end of which is connected to the second output bus 4, The emitters of the fourth 10 and the first 1 npn type transistors are connected through the fifth resistor 15 with the base of the n npn type transistor 11. The emitter of the fifth n-p-n-tyl transistor 11 is connected to the base of the third n-p-n-tips transistor 9. The collector of the fifth n-p-n-type transistor 11 is connected to the collector of the third n-p-n-dash transistor 9, and the sixth resistor 16 is turned off between the collector and the base of the fifth n-p-n-type transistor 11.

Experimental studies were carried out with a device made on transistor assemblies 198НТ1А, 198НТ8А. To use this device with currents of the order of hundreds of mA, it is sufficient to replace the type of transistor (instead of transistor assemblies, use medium power transistors such as KTS19A, B).

The device operates as follows.

In the initial state, the transistors are closed. Increasing the voltage supply En causes an increase in the current flowing through the current mirrors a made on transistors 1.10 n-p-n-type and transistors 7.2 made not on transistors p-p-type. If the technological parameters of the transistors are identical, the current (response) flowing through the transistor 1 (or 2) will always be equal to the current flowing through the transistor 10 (or 7) (fmg. 1).

When determining the voltage of the turn-on and turn-off currents in devices with an S-type current-voltage characteristic (SAX), as shown in FIG. 2, three sections are identified corresponding to the three modes of operation of the transistors. In the OA section, the transistors operate in the region before switching on, in the AB section, in the linear mode, in the BC section, in the saturation mode. Therefore, when analyzing the operating modes of such devices, three equivalent circuits are drawn up. An increase in the supply voltage Ep 6 causes an increase in the current flowing through the current mirrors made on transistors 1.10 and 7.2, as well as the current flowing through the resistors 12, 13, 14, 16.

15. Moreover, the resistance of the resistor 14 is selected much less than the remaining resistances (Ri4 "Ri2, Ria) of the device:

Ri4 "Ri2, Ri4" Ri3, Ri4 Ris.

RH Ri6.

When operating in the first mode (Fig. 2), before turning on the transistors, it should be taken into account that at first the total current 10bsc flows through the resistor 5, the base-emitter junction of the transistor 7, the resistors 12, 16, 15. 14. With a further increase in the supply voltage, everything increases part of the current begins to flow through the resistors 12, 13, the base-emitter transitions of the transistors 7, 9, 10. The current flowing through the resistor divider 16,15,14 creates a voltage drop across the resistors 14, 15, which further opens the transistor 11. In this case, the transistor 11 has a shunt effect on the resis OR 13, Rekv1 is equivalent resistance from the ratio: Ris R) oii

RSKBI-

(1)

(Rn + Ric3ii) where RK311 is the collector-emitter junction resistance of the transistor 11.

Transistors 2 and 8 form the equivalent of a pnpn structure with positive current feedback. As the supply voltage En 6 increases, the current flowing through current mirrors, resistors 12,13, and the base-emitter junction of transistor 9 increase. This leads to an increase the voltage drops across the resistor 12. As a result, the transistor 8 opens even more, its base and collector currents increase. The collector potential of the transistor 8 is reduced, which causes an even greater opening of the pnp type transistor 2.

After the device is turned on (Fig. 2), the current through the resistor 12 practically does not flow, and then (as the voltage drop across the resistor 13 increases), it reverses direction, since the sign of the potential difference on the resistor 12 changes. is found from the ratio:

Ue

-3U63 + Ube

aita + Ua,)

Ri2 (Ri3 + RK3n) + Ri3RK3ii3 Ri3Rit3ii (Ri3 + RKSH)

(2)

where Ube is the voltage at the junction of the base-emitter of the transistor. The turn-on current at which the device enters the linear mode of operation (Fig. 2) is defined as

 on

3 11be 12

Rekv (Rl2 + KekvO

3U63R12 (RK311 + Rt3J

R13 Nec t R12 (R13 + R "11) + R" Rian

(3)

A further increase in voltage leads to an even greater opening of transistors 2 and 8, which make up the equivalents of the p-n-p-n-structure. At a certain supply voltage, due to the action of positive current feedback, the transistors from the linear mode go into saturation mode. The switching-off voltage of the device is practically independent of resistors 12, 13, since in this case the total current mainly flows through the collector circuits of transistors forming current mirrors. The off voltage is defined as

UBb.Kn 3U63 + UKEN, (4)

where 11ken 0.2 V is the collector-emitter voltage of the transistor in saturation mode

The device shutdown current is found from the ratio:

Tsben

1E

(5)

where P is the current transistor gain;

11ben - voltage at the transition base - emitter of the transistor in saturation mode

With increasing ambient temperature, the voltage at the base-emitter transistor junction decreases according to the law:

 Ј A T, (6)

where 1) be0 is the voltage at the base-emitter junction of the transistor at a temperature of T0 - + 20 ° C; Ј 2.5-3.0 mV / deg is the temperature drift velocity of the voltage at the base-emitter junction of the transistor,

DT-increase in temperature Therefore, when the ambient temperature rises, the transistors open at a lower supply voltage, and the output current-voltage characteristic of the S-type device shifts to the left along the voltage axis (Fig. 3a). As the temperature increases, the current flowing through the resistor 14 increases, as a result of which the voltage drop across the resistor 14 increases due to the temperature increase. This temperature increment of the voltage is applied to the base of the transistor 11, opening it even more. As a result, the collector-emitter junction resistance of the transistor 11 decreases, and therefore the equivalent co5 decreases

10 15 20

25

thirty

lp lg CQ 55 resistance, determinable is the ratio (1), An increase in TfMii nfi Vpw of the environment will fall t: .- “- drift of the amplification factors net then V RLpastors D / 3,. 1 "Apefvbv Xv junction collector-siegter A J ,, t | 1chchistorov. An increase in the temperature of the environment of the medium leads to a decrease in the voltage and currents of switching on and off. As follows from the analysis of relations (2), 13), (4), (5), a decrease (with increasing temperature) of the equivalent resistance reduces the drift of the voltage and turn-on current and TPHZ off1-1 (Fig. 36) Thus, in a g, re1p.agggs5.yum device with a direct-to-super-efficient S-type, in comparison with GOTS-tc--, to increase the temperature stability of voltages and currents will turn on the loops , firstly due to the use of: - ,. current reflectors (as a result of 1 of it, the switching currents of the HVDC-R voltage depend only slightly on the parameters of 1 transistors), secondly zl: without introducing a thermal compensation circuit and a resistor 11 and three resistors 14.15 16 r well-known devices with S-type clock-wake-up technology, the current test circuit is robust, keep it safe and easy to use.

CURRENT VC / JUYNIA AND CALCULATION, EHF dpn

The resistance of the resistance 4 re is essentially based on them. The principle is to carry out electronically. This limits the –ix– area, which can be used in a very good way. In addition to this, the drift device succeeded not only in suppressing the drift of voltage and switching current and switching current, but also due to Banrdu i-resistances of resistors 12 i3, and VHTiinveMi with transistors 8 11, my After just a little to change these limits, in the X S-type it significantly expands the use of the device - E 1 nnikisecTRa, namely, expelling, and especially with a wide variety of options

AND OPPORTUNITIES t.

differential differential ie 4-is use pregg | hs ii f g is impeccable both in pulsed and h - devices (imitating g -, i p g i for damping spurious x-leogs - -, it is converted, with thresholds t. - GR with walkable by 1 cobt1, release and hysteresis, in a variety of generators, etc. Grr, psegao ss device can be one hundred - as a control, it can be used to suppress stray. 0 nii

piezoelectric transducers used in the acoustic emission method for controlling the strength of aircraft structures.

Claims (1)

SUMMARY OF THE INVENTION A device with an S-type current-voltage characteristic comprising first and second pnp-type transistors, first and second npn-type transistors, first, second, third, fourth, fifth and sixth resistors, wherein the emitter of the first p- p-p-type is the first output bus and is connected to the power bus through the first resistor, and the second output of the fourth resistor is the second output bus, the second output of which is connected to the first output of the fifth resistor, the collector and the base of the second npn-type transistor are connected with ervymi terminals respectively of the second and third resistors, characterized in that, in order to increase the thermal stability, introduced the third, fourth and fifth transistors are n-p-n-type, and the collector of the first and the emitter of the second transistor an n-p-n-tila connected to the second terminal the third resistor, to the base of the third and the emitter of the fifth n-p-n-type transistor, the emitter of the third n-p-n-type transistor is connected to the base and collector of the fourth and the base of the first n-p-n-type transistor, emitters which are connected to the first terminal of the fifth resistor, the second terminal of which is connected to the base of the fifth npn-type transistor and through the sixth resistor to the base of the second and the collector of the fifth npn-type transistor, with the second terminal of the second resistor and to the collector of the first pnp- transistor type. the base of which is connected to the collector of the second n-p-n-type transistor and to the base and collector of the second a pnp type transistor whose emitter is connected to an emitter of a first pnp type transistor. 6 Oh Јп B, k &  Zo x i5 05 l os Te% o 6YLK мSMUYA Fig / o / yo yl / chance .. JlliHQU BUT ozlssto and b 2 1 m U.b