RU1806434C - Semiconductor laser quantum-dimensional effect - Google Patents

Abstract

Usage: devices of quantum electronics, as a source of coherent radiation. SUMMARY OF THE INVENTION: p-type and p-type wide-gap semiconductor layers are coated with layers of materials with high-temperature superconductivity (HTSC), and the band gap of the active region layer materials does not exceed twice the width of the superconducting energy gap in the materials of HTSC layers at a temperature T To where T is the temperature of the wide-gap semiconductor layers, T0 is the critical temperature of the HTSC laser layers. 3 ill.

Description

The invention relates to quantum electronics, in particular to injection lasers with a quantum-size effect of modulation of the generated radiation.

The purpose of the invention is to expand the spectrum tuning range of the radiation.

Figure 1 shows a diagram of the floor of a conductive laser with a quantum-dimensional effect; figure 2 and 3 is an energy diagram of the active region of a semiconductor laser at a temperature of 77 K and About K.

A semiconductor laser with a quantum-size effect includes an active region 1, insulating layers 2 and 3, control electrodes 4 and 5, wide-gap p-type and p-type layers 6 and 7, layers with high-temperature superconductivity (HTSC) 8 and 9, a temperature control device 10, a magnetic field control device 12, a current control device 13, a pressure control device 14.

The active region 1 of a semiconductor laser is made of at least one layer, the thickness of which ensures the realization of a quantum-size effect for minority carriers injected into the active region 1. The emission spectrum of a semiconductor laser with quantum-dimensional layers depends on the shape of the potential we for minority carriers formed layers of active region 1, wide p-type and p-type semiconductor layers 6 and 7, layers of high-temperature superconductors 8 and 9. Laser radiation is generated at Passing between discrete allowed energy levels (as in the prototype) in said IU, h vmn Em - En. The materials of the layer (or layers) of the active region are selected in such a way that their ea-a ,. barred zones do not exceed (less than) twice the value of the width of the superconductor C /)

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energy gap (2 L) of materials of high-temperature superconductivity of layers 8 and 9 (ED1 2.

Light quanta h vmn 2A coming from the radiation control device 11 on the HTSC layers 8 and 9 destroy Cooper pairs and create photovasiparticles in superconducting layers 8 and 9, which leads to a higher tunneling quasiparticle photocurrent to the active region 1 of the laser. The magnitude of the energy gap (2 can be controlled by external: magnetic field, pressure, current, temperature, and other methods. The contribution to the phototek from the 6ТС 8 layer (Fig. 2) is made only by positively charged photocasiparticles passing through the valence band сЛо-р -type to active region 1, a-bKNAaD into the photo library from the HTSC layer 9 is given only by photoquasiparticles passing through the zoome p idympr into the active one. The temporeturb 1.0 control unit provides о--ф ф ф ф г г м м,,,,,,,, м м м м м м м м м м м м м м м м м м м м м м м стр спектра спектра, управление управление управление управление спектра управление управление управление управление управление управление; ; just the active region (see FIG; 2nd; 3); Ust6yyt (radiation controls; 1 1: b eMyochet: contactless yoeryuhhhhhhhhhhhhhhh: p1K the laser bots from pbb: a; hnO |; b above, i.e. the influence of Quentions (on s / | 0: 8 and 9 to the Ur Urbase mode: ga; G1r; - radio engineering, No. 5, C.; 1§-21, when fifths ;, radiation on layer 8 and 9 ot jst kag. i l-fte / the photocontainer is also supplied (active area: 1 laser efcy tisyeVr Tp provides its own output (1 laser, its own frequency and frequency). In addition, from FIGS. 2 and 3 enter: that when the temperature changes from: 0 to Ta, the form of the potential s changes, because not only something happens: because of the shirin; you are more likely to have another zone in; jyiate rial and rkfyvn dy area 1 with a change in temperature / nr and change in the width of the superconducting energy gaps of the HTSC layers 8 and 9 (the materials of the HTSC layers 8 and 9 can be the same and different in their critical values: That. But, io. V Q, PO, etc.) Thus, by changing the temperature of the active region and HTSC layers with 10 when 11 is turned on, it is possible to reconstruct the radiation spectrum, waves, and water properties of the active region 1 of the laser.

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carry out contactless control of the photocurrent (hv 2 D (T)), the radiation generation mode, switch the laser operating modes from the radiation spectrum in the presence of a restructuring of the slit ((T, H, P, IV JJ HTSC layers to the radiation spectrum without restructuring the slit. / : -: .......::.:;..;. Similarly, non-contact switching can be carried out by including, in addition to 11, an external magnetic field control device 12, which changes the width of the superconducting energy gap, the shape of the potential we. discrete energy working spectrum, emission spectrum laser, switching from the mode in which the HTSC layers provide a photocurrent (at 1 D (H)) to; the mode in which there is no current flow (N But). Similarly, non-contact switching can be done in addition to; devices;: - 1 6 ; 1,1, 12 and the device; V is controlled by the current from V to HTSC layers 13. For b /; 1 through the conductor, the width: - Other uses (hv 2 A (i) j, and the follower;; ::: With the current form, we have a discrete energy; st: H: black, black, ctrhr emission spectrum, .X laser and lazer operating mode -,; ipaclio wpS cl waiiaspH; first; blackout v spectrum irradiating, .. and LOTIC: fuiktsyi b (gln; t and ustr; oyeteo ulrjv: niy; K1 I4. (: h-nil 2:; (P)). toH kyio yastroiku -h- spectrum yzLuchennyY pr p1 / 1zv dyt so lo ..: bi pr: d otypё- by the year of eg -; female on 4 control electrodes 4; 5; v. ;:.;. | B:.: To yosTve Yat; yy; alOE1 for layers: sv; ;, .. coK-oteMh epefу | yo1y / with ruhpromydm 8; and 9 mpgut; 6bi; fb selected; .for example, SlPJiSrGaiCuO (To: 110 K) or B1ЈaСгСиО (То;. Щ. а; в; 1 а; 1 month; for 1; for:; aktWйFiQ; in p j5; bf:; e: M with f; ё we P b x S ri i - x te, р со 6 6 л 1 й; д д й:;; й; E / iPbSriTe; 2ДзтСп; This condition is fulfilled, -f :( for example, in the temperature range 0 T To, - - o0l; Vaktv; uy; rblst layer Xbn; For ykgsaH Hbix materials, high-temperature superconductors of layers 8 and 9 7s K are suitable as materials; third electronic; metrology, information, computer engineering, etc., areas of national economy.

Claims (1)

SUMMARY OF THE INVENTION A semiconductor laser with a quantum size effect, including an active region, control electrodes, separated from the active region by insulating layers, wide-gap p- and p-type semiconductor layers adjacent to the ends of the active region of the temperature control device; magnetic field, current radiation, and the fact that, in order to expand the range of tuning of the radiation spectrum, p-type and p-type semiconductor layers are deposited from materials with high-temperature Sirpro & moreover the bandgaps of the material of the active-layer layer do not exceed twice the width of the superconducting energy gap of the materials of the layers with high-temperature superconductivity at the temperature Tg, where T0 is the critical temperature of the materials of the layers with high-temperature superconductivity, T is the temperature of the wide-gap semiconductor layers.