RU167147U1 - TRANSREFLECTOR - Google Patents

Abstract

1. Transreflector containing a system of full-wave annular zones, including bounded by concentric circles, translucent and translucent annular zones located on a dielectric substrate and having the same orientation, width W and the period of arrangement S of metal strips of translucent annular zones, characterized in that each full-wave annular zone is a translucent annular zone, consisting of translucent annular subzones, the maximum number of which in one full-wave zone e is equal to the phase discretization parameter M = 3,4 ..., the inner radius of the concentric circle bounding the semitransparent annular subzone is the outer radius of the concentric circle of the previous annular subzone, while the semitransparent annular subbands are located at least on M-1 parallel tightly adjacent to each other to other dielectric substrates with a thickness where λ is the wavelength in free space; M = 3, 4 ... is the phase sampling parameter; ε is the dielectric constant of the dielectric substrate; p = 1, 2, 3 ... is the number q = 0, 1, 2 ... is the thickness coefficient of the pth dielectric substrate, so that the semitransparent ring subband reflects an electromagnetic wave with a phase delay equal to, where is the wavelength in the dielectric substrate with respect to the semitransparent ring subbands, located on adjacent dielectric substrates, while the total thickness h of all dielectric layers corresponds to the condition where u = 1, 2, 3 ... is the proportionality coefficient. 2. Transreflector according to claim 1, characterized in that it contains an additional layer of dielectric material,

Description

The utility model relates to the field of radio engineering, in particular to antenna technology, and can be used in the centimeter and millimeter wavelength ranges, for example, in two-mirror antennas with rotation of the plane of polarization.

, где λ₀ - длина волны в свободном пространстве, и шириной W<S параллельные друг другу металлические полоски.Known transreflector [1], which is a dielectric surface of a parabolic shape, on the inside of which are located with a period

, where λ ₀ is the wavelength in free space, and with a width W <S, metal strips parallel to each other.

The disadvantage of this transreflector is the complexity of its manufacture, due to the curved surface and stringent requirements for its profile, as well as the large volume occupied by the transreflector.

, где λ₀ - длина волны в свободном пространстве, расположенных на плоской диэлектрической подложке толщиной

, где λ_д - длина волны в диэлектрике, образующих полупрозрачную решетку. На противоположной стороне диэлектрической подложки расположена система из последовательно чередующихся полупрозрачных и радиопрозрачных кольцевых зон, ограниченных концентрическими окружностями, при этом ориентация металлических проводников, ширина W и период расположения проводников S полупрозрачных кольцевых зон и решетки, расположенных на противоположных сторонах плоской диэлектрической поверхности, одинаковы. С наружной стороны полупрозрачной решетки расположен слой диэлектрического материала толщиной равной

, где n=1, 3, 5…, λ_д - длина волны в диэлектрике.The closest in purpose, the number of matching signs to the claimed device is a transreflector [2], selected as a prototype. Device - prototype consists of a system of parallel metal conductors with a period

where λ ₀ is the wavelength in free space located on a flat dielectric substrate with a thickness

where λ _d is the wavelength in the dielectric, forming a translucent lattice. On the opposite side of the dielectric substrate there is a system of sequentially alternating translucent and radiolucent annular zones bounded by concentric circles, with the orientation of the metal conductors, the width W and the period of the conductors S of the semitransparent annular zones and the lattice located on opposite sides of the flat dielectric surface. On the outside of the translucent lattice is a layer of dielectric material with a thickness equal to

where n = 1, 3, 5 ..., λ _d is the wavelength in the dielectric.

The main disadvantage of the prototype device is its low phase efficiency, not exceeding the value of 0.41, due to the high discretization of the phase delay equal to 180 ° of the formed flat front reflected from the zone surface of the device when a spherical electromagnetic wave is incident on it.

The technical result from the use of the claimed utility model is to increase the phase efficiency, which leads to an increase in the coefficient of directional action and a decrease in the level of side lobes.

The specified technical result is achieved by the fact that in the inventive transreflector containing a system of full-wave annular zones, including radio-transparent and translucent annular zones bounded by concentric circles located on a dielectric substrate and having the same orientation, width W and the period of arrangement S of metal strips of translucent annular zones, in unlike the prototype, each full-wave annular zone is a translucent annular zone consisting of a translucent annular x subzones, the maximum number of which in one full-wave zone is equal to the phase discretization parameter M = 3.4 ..., and the inner radius of the concentric circle bounding the translucent ring subzone is the outer radius of the concentric circle of the previous ring subzone. In this case, translucent ring subbands are located at least on M-1 parallel dielectric substrates that are closely adjacent to each other with a thickness of

,

,

where: λ ₀ is the wavelength in free space;

M = 3, 4 ... - phase discretization parameter;

ε is the dielectric constant of the dielectric substrate;

p = 1, 2, 3 ... is the number of the dielectric substrate;

, где

- длина волны в диэлектрической подложке, по отношению к полупрозрачным кольцевым подзонам, расположенным на соседних диэлектрических подложках, при этом суммарная толщина h_Σ всех диэлектрических слоев соответствует условию

, где u=1, 2, 3… - коэффициент пропорциональности.q = 0, 1, 2 ... is the thickness coefficient of the pth dielectric substrate, so that the translucent ring subband reflects an electromagnetic wave with a phase delay equal to

where

- the wavelength in the dielectric substrate, in relation to the translucent annular subbands located on adjacent dielectric substrates, while the total thickness h _{Σ of} all dielectric layers corresponds to the condition

where u = 1, 2, 3 ... is the coefficient of proportionality.

, при q=0, например, в сантиметровом диапазоне длин волн, так и разными по толщине

, например, в миллиметровом диапазоне волн. Расположение полупрозрачных кольцевых подзон и выбранная толщина подложек обеспечивают фазовую задержку, равную

при параметре дискретизации фазы электромагнитной волны, равном M.The choice of the thickness h _{p of the} dielectric substrates is determined by the requirements for the strength and rigidity of the transreflector. Substrates can be both minimal in thickness and equal

, for q = 0, for example, in the centimeter wavelength range, and different in thickness

, for example, in the millimeter wave range. The location of the translucent annular subbands and the selected thickness of the substrates provide a phase delay equal to

with the phase sampling parameter of the electromagnetic wave equal to M.

The magnitude of the phase delay is selected based on the optimal approximation of the incident spherical phase front from the irradiator located at the focus of the transreflector converted to a discrete flat phase front.

The phase sampling parameter M = 3.4 ... determines the degree of approximation of the discrete electromagnetic wave reflected from the transreflector to the monotonous line and is selected as the most optimal for increasing phase efficiency by reducing phase errors.

, что приводит к снижению потерь при прохождении сигала и уменьшению боковых лепестков диаграммы направленности.In order to ensure the best possible passage of the electromagnetic wave through the transreflector and to reduce distortion of the radiation pattern by parasitic wave reflections from the interfaces of two media (air-dielectric and dielectric-air), the condition of equal total thickness h _{Σ of} all dielectric substrates (dielectric layers) of the transreflector to be equal to

, which leads to a decrease in losses during the passage of the sigal and a decrease in the side lobes of the radiation pattern.

, равно М, то их суммарная толщина h_Σ всегда будет удовлетворять условию

.Moreover, if the number of dielectric substrates, each of which has a thickness

is equal to M, then their total thickness h _Σ will always satisfy the condition

.

, где q=0, 1, 2… - коэффициент толщины дополнительного слоя диэлектрического материала.If the number of dielectric substrates is not equal to the value of M, for example, when translucent ring subbands are located on both sides of the dielectric substrate, it is necessary to supplement the transreflector with a dielectric layer with a dielectric constant equal to the dielectric constant of the substrates and a thickness equal to

where q = 0, 1, 2 ... is the thickness coefficient of the additional layer of dielectric material.

,A modification of the inventive transreflector is possible, in which matching dielectric plates of a uniform dielectric material with a dielectric constant are installed on the outer sides of the inventive transreflector to reduce stray reflections from the air-transreflector, transreflector-air interface

,

Where:

ε _acc. is the dielectric constant of the matching plate;

ε ₀ - dielectric constant of air space;

ε is the dielectric constant of dielectric substrates,

.and equal to

.

The proposed set of essential features provides a reduction in phase errors, which leads to an increase in the phase efficiency of the transreflector, which leads to an increase in the coefficient of directional action and a decrease in the level of side lobes.

The essence of the technical solution is illustrated by the figures and diagrams:

FIG. 1 is a schematic illustration of a planar multilayer transreflector;

FIG. 2 is a schematic representation of a transreflector with matching dielectric plates;

FIG. 3 is a schematic representation of a transreflector with a phase sampling parameter of M = 4;

FIG. 4 - radiation patterns in the E - plane when the transreflector is in reflection mode of the incident spherical electromagnetic wave from the prototype device (solid line) and from the inventive transreflector (Fig. 1) (dashed line);

FIG. 5 - radiation patterns in the H - plane when the transreflector is in reflection mode of the incident spherical electromagnetic wave from the prototype device (solid line) and from the inventive transreflector (Fig. 1) (dashed line);

FIG. 6 - radiation patterns in the E - plane when the transreflector is operating in the mode of passage of the incident spherical electromagnetic wave through the prototype device (solid line) and through the inventive transreflector (Fig. 1) (dashed line);

FIG. 7 - radiation patterns in the H - plane when the transreflector is operating in the mode of passage of an incident spherical electromagnetic wave through the prototype device (solid line) and through the inventive transreflector (Fig. 1) (dashed line).

The inventive transreflector (Fig. 1), made in the form of a multilayer structure 1 with full-wave annular zones, includes radio-transparent and translucent annular zones bounded by concentric circles having the same orientation, width W, and the period S of the metal strips of the translucent annular zones. Each i-th full-wave annular zone is a translucent annular zone, where i = 0, 1, 2 ... is the number of the full-wave translucent annular zone, consisting of translucent annular Fresnel subbands 2, 3, 4 ... with the number of the subzone j = 1, 2, 3 ... M, the maximum number of which in one full-wave zone is equal to the phase sampling parameter M = 3.4 ...

The inner radius of the concentric circle bounding the translucent ring subzone with number j is the outer radius of the concentric circle of the previous ring subzone with number j-1, for example, the inner radius of the concentric circle bounding the translucent ring subzone 3 with number j = 2 is the outer radius of the concentric circle of the previous ring subzone 2 with number j = l, respectively, the inner radius of the ring subzone 4 with number j = 3 is the outer radius of the previous ring sub zone 3 with number j = 2.

Translucent ring subzones 2, 3, 4 ... with the subzone number j = 1, 2, 3 ... M are located on at least M-1 parallel dielectric substrates 5, 6, 7, ... M-1, thick,

where: λ ₀ is the wavelength in free space;

M = 3, 4 ... - phase discretization parameter;

ε is the dielectric constant of the dielectric substrate;

p = 1, 2, 3 ... is the number of the dielectric substrate;

q = 0, 1, 2 ... is the thickness coefficient of the pth dielectric substrate. Moreover, all ring subbands with the same numbers j, which are part of any full-wave translucent ring zone i, are located on the same corresponding dielectric substrate with number p and are separated by radio-transparent zones. For example, ring subzones 3 with number j = 2 in all full-wave translucent ring zones i are located on one side of the dielectric substrate 5 with number p = 1, respectively, ring subzones 4 with number j = 3 in all full-wave translucent ring zones i are located on the corresponding substrate 6 with the number p = 2.

, где

- длина волны в диэлектрической подложке, по отношению к полупрозрачным кольцевым подзонам, расположенным на соседних диэлектрических подложках.Translucent ring subzones 2, 3, 4 ... with the number of the subzone j = 1, 2, 3 ... M are made with the ability to reflect an electromagnetic wave with a phase delay equal to

where

- the wavelength in the dielectric substrate, in relation to the translucent annular subbands located on adjacent dielectric substrates.

, где λ_д - длина волны в диэлектрической подложке, М=3,4… - параметр дискретизации фазы, по отношению к полупрозрачным кольцевым подзонам 2 с номером j=1, принятым за опорные, а полупрозрачные кольцевые подзоны 4 с номером j=3, расположенные на диэлектрической подложке 6 с номером p=2, обеспечивают фазовую задержку

по отношению к полупрозрачным кольцевым подзонам 2 с номером j=l, полупрозрачные кольцевые подзоны с номером j=M, расположенные на М-1 диэлектрической подложке, обеспечивают фазовую задержку

по отношению к полупрозрачным кольцевым подзонам 2 с номером j=1.When the electromagnetic wave is incident and reflected, translucent ring subzones 3 with number j = 2 located on the dielectric substrate 5 with number p = 1 provide phase delays equal to

where λ _d is the wavelength in the dielectric substrate, M = 3.4 ... is the phase discretization parameter, with respect to the translucent ring subzones 2 with number j = 1, taken as reference, and the translucent ring subzones 4 with number j = 3, located on the dielectric substrate 6 with the number p = 2, provide phase delay

with respect to the translucent ring subzones 2 with the number j = l, the translucent ring subzones with the number j = M located on the M-1 dielectric substrate provide phase delay

in relation to the translucent ring subzones 2 with the number j = 1.

,Translucent ring subzones form in the aperture of the transreflector I = i + 1 full-wave translucent ring zones (Fig. 1). The number I of full-wave translucent annular zones is determined by the diameter D of the transflector and the focal length F and is equal to:

,

the radii r _{ij of the} translucent annular subbands are equal [3]:

.

.

, где q=0, 1, 2… - коэффициент толщины дополнительного слоя диэлектрического материала.The transreflector may contain an additional layer of dielectric material 8 adjacent to the translucent annular subzones 2, taken as reference. An additional layer of dielectric material 8 has a dielectric constant equal to the dielectric constant of the dielectric substrates 5, 6, 7, ... M-1, and its thickness is

where q = 0, 1, 2 ... is the thickness coefficient of the additional layer of dielectric material.

где u=1, 2, 3… - коэффициент пропорциональности. В случае использования дополнительного слоя 8 суммарная толщина h_Σ всех диэлектрических слоев 8, 5, 6, 7, …М-1 также соответствует условию

.The total thickness h _{Σ of} all dielectric substrates 5, 6, 7, ... M-1 without using an additional layer of dielectric material 8 corresponds to the condition

where u = 1, 2, 3 ... is the coefficient of proportionality. In the case of using an additional layer 8, the total thickness h _{Σ of} all dielectric layers 8, 5, 6, 7, ... M-1 also meets the condition

.

,One embodiment is a transreflector with matching plates 9 and 10 mounted on its outer sides (Fig. 2). Matching plates 9, 10 are made of a homogeneous dielectric material with a dielectric constant

,

Where:

ε _acc. is the dielectric constant of the matching plate;

ε ₀ - dielectric constant of air space;

.ε is the dielectric constant of dielectric substrates, and with a thickness equal to

.

Consider the operation of the transreflector as applied to a two-mirror antenna with rotation of the plane of polarization and a phase sampling parameter M = 4, which corresponds to discrete phase values of 0 °, 90 °, 180 °, 270 °.

где λ_д - длина волны в диэлектрике, и дополнительный слой диэлектрического материала 8 толщиной

, при коэффициенте толщины диэлектрика q=0.For the case M = 4, the transreflector (Fig. 3) contains four translucent annular subzones 2, 3, 4, j located on three dielectric substrates 5, 6, 7, thick

where λ _d is the wavelength in the dielectric, and an additional layer of dielectric material 8 is thick

, with the coefficient of thickness of the dielectric q = 0.

When the transreflector (Fig. 3) is in the “reflection” mode emitted by the primary irradiator (for example, a horn) located in the focus “O”, a spherical electromagnetic wave with a polarization of the electric field vector E coincides with the orientation of the metal strips of translucent ring subbands 2, 3 , 4, j located on the dielectric substrates 5, 6, 7, through radio-transparent zones reaches various translucent ring subbands with different phase delays. In this case, the beam coinciding with the focal axis OA of the transreflector has the smallest phase delay in free space, taken as the reference one, and at the edge of the aperture (extreme translucent annular subband j) of radius R, the maximum phase delay equal to

,

,

Where:

- постоянная распространения в свободном пространстве;

- propagation constant in free space;

F is the focal length;

λ ₀ - wavelength in free space.

где

- длина волны в диэлектрике, имеют разность длины путей относительно полупрозрачных кольцевых подзон 2, принятых за опорные, равную

, т.е. обеспечивают фазовую задержку 90°. Аналогично лучи электромагнитной волны, падающие и отраженные от полупрозрачных кольцевых подзон 4 и j, расположенных на диэлектрических подложках 6, 7, имеют разность длины путей относительно полупрозрачных кольцевых подзон 2, равную

и

, соответственно, т.е. фазовые задержки 180° и 270°. Таким образом, каждая диэлектрическая подложка с расположенными на ней полупрозрачными кольцевыми подзонами выполняет роль фиксированного фазовращателя с дискретным фазовым сдвигом 90°, что обеспечивает формирование фазового плоского фронта переотраженной от трансрефлектора электромагнитной волны.The intermediate points of the aperture have monotonous, smoothly varying values of phase delays from 0 ° to φ ^° _max . Therefore, the transreflector for the formation of a reflected plane electromagnetic wave must provide phase delays that vary from 0 ° at the edge of the transreflector to φ ^° _max in its center. The necessary correction of the phase delay is provided by changing the length of the paths of the rays incident and reflected from the translucent annular subzones 2, 3, 4, j. So, the rays of an electromagnetic wave incident and reflected from translucent annular subbands 3 located on a dielectric substrate 5 of a thickness

Where

- the wavelength in the dielectric, have a path length difference relative to the translucent annular subzones 2, taken as reference, equal to

, i.e. provide a phase delay of 90 °. Similarly, electromagnetic wave rays incident and reflected from translucent annular subbands 4 and j located on dielectric substrates 6, 7 have a path length difference with respect to translucent annular subbands 2 equal to

and

, respectively, i.e. 180 ° and 270 ° phase delays. Thus, each dielectric substrate with semitransparent ring subbands located on it serves as a fixed phase shifter with a discrete 90 ° phase shift, which ensures the formation of a phase plane front of an electromagnetic wave reflected from the transreflector.

и излучается в свободное пространство. При этом суммарная толщина диэлектрических подложек 5, 6, 7 и дополнительного слоя 8 равна половине длины волны в диэлектрике

, где λ_д - длина волны в диэлектрике, которая вносит минимальные потери электромагнитной энергии при прохождении через трансрефлектор [4].When an electromagnetic wave with a polarization of the electric field vector E is incident on the transreflector with the polarization of the electric field vector E, perpendicular to the orientation of the metal strips of the translucent ring subbands, the transmission coefficient of the electromagnetic wave is close to 1. The electromagnetic wave sequentially passes through the translucent zones and translucent ring subzones j, 4, 3, 2 located on dielectric substrates 7, 6, 5, and an additional layer of dielectric material 8 with a thickness

and radiates into free space. In this case, the total thickness of the dielectric substrates 5, 6, 7 and the additional layer 8 is equal to half the wavelength in the dielectric

where λ _d is the wavelength in the dielectric, which introduces the minimum loss of electromagnetic energy when passing through a transreflector [4].

, и поступает на трансрефлектор, проходит через диэлектрические подложки 7, 6, 5 с расположенными на них полупрозрачными кольцевыми подзонами j, 4, 3, 2, дополнительный слой диэлектрического материала 8, вторую согласующую диэлектрическую пластину 9 с диэлектрической проницаемостью

и выходит в свободное пространство. Согласующие диэлектрические пластин 9 и 10 позволяют снизить потери электромагнитной энергии при прохождении волны через трансрефлектор.In the presence of matching dielectric plates 9 and 10 in the transreflector (Fig. 2), an electromagnetic wave with polarization of the electric field vector E perpendicular to the orientation of the metal strips of translucent annular subbands passes successively free space with a permittivity ε ₀ through the first matching dielectric plate 10 having dielectric constant

, and enters the transreflector, passes through dielectric substrates 7, 6, 5 with translucent annular subbands j, 4, 3, 2 located on them, an additional layer of dielectric material 8, and a second matching dielectric plate 9 with permittivity

and goes into free space. Matching dielectric plates 9 and 10 can reduce the loss of electromagnetic energy during the passage of the wave through the transreflector.

Computer simulation of the inventive transreflector with a diameter of ⌀80 mm, with a focal length F = 40 mm, a phase sampling parameter M = 4, made of a dielectric material of the R / T type Duroid 5870, having a dielectric constant ε = 2.33 and a dielectric loss tangent tanδ = 0.0012, conducted for the operating frequency of 94 GHz, showed the following results:

- When a spherical electromagnetic wave is incident on the transreflector (Fig. 3) from the primary irradiator with a polarization of the electric field vector E, which coincides with the orientation of the metal strips of translucent annular subbands, a reflected radiation pattern is formed in the E and H planes (Fig. 4, Fig. 5 - The solid line) from the inventive transreflector, compared to a similar radiation pattern formed by the prototype device (Fig. 4, Fig. 5 - dashed line), has a 1.87 dB higher directional coefficient, from -2 to -5 dB lower than the level of the 1st side lobe and a significant decrease in the level of the 2nd and 3rd side lobes;

- When a spherical electromagnetic wave is incident on the transreflector (Fig. 3) from the primary irradiator with polarization of the electric field vector E, perpendicular to the orientation of the metal strips, radiation patterns in E and H planes after the electromagnetic wave passes through the inventive transreflector (Fig. 6, Fig. 7 - Solid line) and through the prototype device (Fig. 6, Fig. 7 - Dashed line) almost coincide, except for the zero direction in which the inventive transreflector smoothed out the unwanted emission.

- Matching dielectric plates mounted on the inventive transreflector (Fig. 2) allowed to reduce the reflection coefficient from the free space - transreflector interface by 15 dB.

Thus, the claimed utility model provides an increase in phase efficiency, which leads to an increase in the coefficient of directional action and a decrease in the level of side lobes.

Information sources

1. Bahrakh L.D., Galimov G.K. “Mirror Scanning Antennas: Theory and Calculation Methods”, Nauka Publishing House, Moscow 1981, pp. 258–259

2. Patent No. 2439757, Russian Federation, IPC H01Q 15/24 (2006.01), publ. 01/10/2012, Transreflector / Kuzmin A.A., Pogrebnyakov A.M.

3. Y.J. Guo, “A High-Efficiency Quarter-Wave Zone Reflector” IEEE Microwave and Guided Wave Letters, vol. 2, No. 12, December1992, pp. 470 ÷ 471

4. Prigoda B.A., Kokunko B.C. "Aircraft fairings", publishing house "Engineering", Moscow 1970, p. 51

Claims (3)

1. Transreflector containing a system of full-wave annular zones, including bounded by concentric circles, translucent and translucent annular zones located on a dielectric substrate and having the same orientation, width W and the period of arrangement S of metal strips of translucent annular zones, characterized in that each full-wave annular zone is a translucent annular zone, consisting of translucent annular subzones, the maximum number of which in one full-wave zone e is equal to the phase discretization parameter M = 3,4 ..., the inner radius of the concentric circle bounding the semitransparent annular subzone is the outer radius of the concentric circle of the previous annular subzone, while the semitransparent annular subbands are located at least on M-1 parallel tightly adjacent to each other thick dielectric substrates

where λ ₀ is the wavelength in free space; M = 3, 4 ... - phase discretization parameter; ε is the dielectric constant of the dielectric substrate; p = 1, 2, 3 ... is the number of the dielectric substrate; q = 0, 1, 2 ... is the thickness coefficient of the pth dielectric substrate, so that the translucent ring subband reflects an electromagnetic wave with a phase delay equal to

where

- the wavelength in the dielectric substrate, in relation to the translucent annular subbands located on adjacent dielectric substrates, the total thickness h _{∑ of} all dielectric layers corresponds to the condition

where u = 1, 2, 3 ... is the coefficient of proportionality. 2. The transreflector according to claim 1, characterized in that it comprises an additional layer of dielectric material adjacent to translucent annular subbands taken as reference ones and having a dielectric constant equal to the dielectric constant of dielectric substrates, the thickness of which is

where q = 0, 1, 2 ... is the thickness coefficient of the additional layer of dielectric material. 3. The transreflector according to claim 1 or 2, characterized in that matching dielectric plates with permittivity are installed on its outer sides

where ε _acc. is the dielectric constant of the matching plate; ε ₀ - dielectric constant of air space; ε is the dielectric constant of dielectric substrates, and a thickness equal to

.

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