PT1743055E - Processo e dispositivo para o crescimento fitas de material semicondutor, particularmente fitas de sil?cio - Google Patents
Processo e dispositivo para o crescimento fitas de material semicondutor, particularmente fitas de sil?cio Download PDFInfo
- Publication number
- PT1743055E PT1743055E PT04727772T PT04727772T PT1743055E PT 1743055 E PT1743055 E PT 1743055E PT 04727772 T PT04727772 T PT 04727772T PT 04727772 T PT04727772 T PT 04727772T PT 1743055 E PT1743055 E PT 1743055E
- Authority
- PT
- Portugal
- Prior art keywords
- growth
- ribbons
- molten zone
- semiconductor
- electrodes
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/102—Apparatus for forming a platelet shape or a small diameter, elongate, generally cylindrical shape [e.g., whisker, fiber, needle, filament]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
- Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/PT2004/000007 WO2005100644A1 (en) | 2004-04-15 | 2004-04-15 | Method for the growth of semiconductor ribbons |
Publications (1)
Publication Number | Publication Date |
---|---|
PT1743055E true PT1743055E (pt) | 2011-05-04 |
Family
ID=34957243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PT04727772T PT1743055E (pt) | 2004-04-15 | 2004-04-15 | Processo e dispositivo para o crescimento fitas de material semicondutor, particularmente fitas de sil?cio |
Country Status (8)
Country | Link |
---|---|
US (1) | US7799131B2 (pt) |
EP (1) | EP1743055B1 (pt) |
JP (1) | JP2007532464A (pt) |
AT (1) | ATE493525T1 (pt) |
DE (1) | DE602004030828D1 (pt) |
ES (1) | ES2363699T3 (pt) |
PT (1) | PT1743055E (pt) |
WO (1) | WO2005100644A1 (pt) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100050932A1 (en) * | 2008-08-27 | 2010-03-04 | Bp Corporation North America Inc. | Apparatus and Method of Direct Electric Melting a Feedstock |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3935058A (en) | 1971-07-15 | 1976-01-27 | Preussag Aktiengesellschaft | Zone melting process |
US3960511A (en) | 1971-07-15 | 1976-06-01 | Preussag Aktiengesellschaft | Zone melting process |
US4118197A (en) * | 1977-01-24 | 1978-10-03 | Mobil Tyco Solar Energy Corp. | Cartridge and furnace for crystal growth |
US4661200A (en) | 1980-01-07 | 1987-04-28 | Sachs Emanuel M | String stabilized ribbon growth |
JPS5914438B2 (ja) * | 1981-09-16 | 1984-04-04 | 株式会社東芝 | 結晶基板の製造装置 |
DE3240245A1 (de) | 1982-10-29 | 1984-05-03 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum herstellen von bandfoermigen siliziumkoerpern fuer solarzellen |
US4575401A (en) | 1984-06-07 | 1986-03-11 | Wedtech Corp | Method of and apparatus for the drawing of bars of monocrystalline silicon |
DE3536743C2 (de) | 1985-10-15 | 1994-11-10 | Siemens Ag | Verfahren zum Herstellung von großflächigen Siliziumkristallkörpern für Solarzellen |
US4749438A (en) | 1986-01-06 | 1988-06-07 | Bleil Carl E | Method and apparatus for zone recrystallization |
JPH0543376A (ja) | 1991-05-14 | 1993-02-23 | Sumitomo Metal Ind Ltd | 単結晶シリコンの製造方法 |
US5108720A (en) * | 1991-05-20 | 1992-04-28 | Hemlock Semiconductor Corporation | Float zone processing of particulate silicon |
US5885470A (en) * | 1997-04-14 | 1999-03-23 | Caliper Technologies Corporation | Controlled fluid transport in microfabricated polymeric substrates |
US6878256B2 (en) * | 2001-04-02 | 2005-04-12 | Hitachi, Ltd. | Capillary array device |
-
2004
- 2004-04-15 JP JP2007508296A patent/JP2007532464A/ja active Pending
- 2004-04-15 ES ES04727772T patent/ES2363699T3/es not_active Expired - Lifetime
- 2004-04-15 PT PT04727772T patent/PT1743055E/pt unknown
- 2004-04-15 DE DE602004030828T patent/DE602004030828D1/de not_active Expired - Lifetime
- 2004-04-15 WO PCT/PT2004/000007 patent/WO2005100644A1/en active Application Filing
- 2004-04-15 US US11/578,378 patent/US7799131B2/en not_active Expired - Fee Related
- 2004-04-15 AT AT04727772T patent/ATE493525T1/de not_active IP Right Cessation
- 2004-04-15 EP EP04727772A patent/EP1743055B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE602004030828D1 (de) | 2011-02-10 |
EP1743055A1 (en) | 2007-01-17 |
ES2363699T3 (es) | 2011-08-12 |
WO2005100644A1 (en) | 2005-10-27 |
US20070241481A1 (en) | 2007-10-18 |
EP1743055B1 (en) | 2010-12-29 |
JP2007532464A (ja) | 2007-11-15 |
ATE493525T1 (de) | 2011-01-15 |
US7799131B2 (en) | 2010-09-21 |
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