PT117332A - PROCESS, REACTOR AND SYSTEM FOR THE SELECTIVE PRODUCTION OF TWO-DIMENSIONAL AUTONOMOUS NANOSTRUCTURES UTILI - Google Patents

PROCESS, REACTOR AND SYSTEM FOR THE SELECTIVE PRODUCTION OF TWO-DIMENSIONAL AUTONOMOUS NANOSTRUCTURES UTILI

Info

Publication number
PT117332A
PT117332A PT117332A PT11733216A PT117332A PT 117332 A PT117332 A PT 117332A PT 117332 A PT117332 A PT 117332A PT 11733216 A PT11733216 A PT 11733216A PT 117332 A PT117332 A PT 117332A
Authority
PT
Portugal
Prior art keywords
reactor
nanostructures
zone
microwaves
precursors
Prior art date
Application number
PT117332A
Other languages
Portuguese (pt)
Other versions
PT117332B (en
Inventor
Paulo Dos Santos Duarte Vieira Henriques Júlio
Paulo Mota Capitão Lemos Alves Luís
Miguel Soares Gonçalves Bruno
Stefanova Tatarova Elena
Original Assignee
Inst Superior Tecnico
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Superior Tecnico filed Critical Inst Superior Tecnico
Priority to PT117332A priority Critical patent/PT117332B/en
Publication of PT117332A publication Critical patent/PT117332A/en
Publication of PT117332B publication Critical patent/PT117332B/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

A PRESENTE INVENÇÃO REFERE-SE A UM PROCESSO, REATOR E SISTEMA PARA PRODUZIR NANOESTRUTURAS BIDIMENSIONAIS AUTÓNOMAS, UTILIZANDO UM AMBIENTE DE PLASMA EXCITADO POR MICRO-ONDAS. O PROCESSO BASEIA-SE NA INJEÇÃO DE UMA MISTURA (9) DE GASES E DE PRECURSORES, EM REGIME DE ESCOAMENTO, NUM REATOR. O ESCOAMENTO É SUBMETIDO AO CAMPO ELÉTRICO DE UMA ONDA (5) DE SUPERFÍCIE, EXCITADA MEDIANTE A UTILIZAÇÃO DE POTÊNCIA (7) MICRO-ONDAS QUE É INTRODUZIDA NUM APLICADOR (6) DE CAMPO, GERANDO PLASMAS COM ALTA DENSIDADE (2,3,4) DE ENERGIA, QUE DECOMPÕEM OS PRECURSORES NOS SEUS CONSTITUINTES ATÓMICOS E/OU MOLECULARES. O SISTEMA COMPREENDE UM REATOR DE PLASMA COM UMA ZONA DE LANÇAMENTO DE ONDAS DE SUPERFÍCIE, UMA ZONA TRANSIENTE COM ÁREA DE SECÇÃO TRANSVERSAL PROGRESSIVAMENTE CRESCENTE, E UMA ZONA DE NUCLEAÇÃO. O REATOR DE PLASMA EM CONJUNTO COM UMA FONTE (11) DE RADIAÇÃO INFRAVERMELHA, PROPORCIONAM UM AJUSTE CONTROLADO DOS GRADIENTES ESPACIAIS DA TEMPERATURA E DA VELOCIDADE DE ESCOAMENTO DO GÁS. A MAIORIA DAS AMOSTRAS DE NANOESTRUTURAS BIDIMENSIONAIS OBTIDAS POSSUI UMA ÚNICA CAMADA ATÓMICA DE ESPESSURA, ALÉM DE QUE O PROCESSO E SISTEMA PERMITEM OBTER TAXAS DE PRODUÇÃO DE GRAFENO DA ORDEM DE UM GRAMA POR HORA E SUPERIOR.THE PRESENT INVENTION REFERS TO A PROCESS, REACTOR AND SYSTEM FOR PRODUCING TWO-DIMENSIONAL AUTONOMOUS NANOSTRUCTURES USING A PLASMA ENVIRONMENT EXCITED BY MICROWAVES. THE PROCESS IS BASED ON THE INJECTION OF A MIXTURE (9) OF GASES AND PRECURSORS, IN A FLOW SYSTEM, IN A REACTOR. THE DRAINAGE IS SUBMITTED TO THE ELECTRIC FIELD OF A SURFACE WAVE (5), EXCITED BY THE USE OF POWER (7) MICROWAVES THAT IS INTRODUCED IN A FIELD APPLICATOR (6), GENERATING PLASMS WITH HIGH DENSITY (2,3,4 ) OF ENERGY, WHICH BREAK THE PRECURSORS INTO THEIR ATOMIC AND/OR MOLECULAR CONSTITUENTS. THE SYSTEM COMPRISES A PLASMA REACTOR WITH A SURFACE WAVE LAUNCH ZONE, A TRANSIENT ZONE WITH A PROGRESSIVELY INCREASING CROSS-SECTION AREA, AND A NUCLEATION ZONE. THE PLASMA REACTOR TOGETHER WITH AN INFRARED RADIATION SOURCE (11) PROVIDES A CONTROLLED ADJUSTMENT OF THE SPATIAL GRADIENTS OF THE GAS TEMPERATURE AND FLOW SPEED. THE MOST OF THE TWO-DIMENSIONAL NANOSTRUCTURE SAMPLES OBTAINED HAS A SINGLE ATOMIC LAYER OF THICKNESS, IN ADDITION TO THAT THE PROCESS AND SYSTEM ALLOW TO OBTAIN GRAPHENE PRODUCTION RATES IN THE ORDER OF ONE GRAM PER HOUR AND ABOVE.

PT117332A 2016-05-13 2016-05-13 REACTOR FOR THE SELECTIVE PRODUCTION OF AUTONOMOUS TWO-DIMENSIONAL NANOSTRUCTURES USING PLASMA TECHNOLOGY PT117332B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PT117332A PT117332B (en) 2016-05-13 2016-05-13 REACTOR FOR THE SELECTIVE PRODUCTION OF AUTONOMOUS TWO-DIMENSIONAL NANOSTRUCTURES USING PLASMA TECHNOLOGY

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PT117332A PT117332B (en) 2016-05-13 2016-05-13 REACTOR FOR THE SELECTIVE PRODUCTION OF AUTONOMOUS TWO-DIMENSIONAL NANOSTRUCTURES USING PLASMA TECHNOLOGY

Publications (2)

Publication Number Publication Date
PT117332A true PT117332A (en) 2021-08-06
PT117332B PT117332B (en) 2022-05-12

Family

ID=77554546

Family Applications (1)

Application Number Title Priority Date Filing Date
PT117332A PT117332B (en) 2016-05-13 2016-05-13 REACTOR FOR THE SELECTIVE PRODUCTION OF AUTONOMOUS TWO-DIMENSIONAL NANOSTRUCTURES USING PLASMA TECHNOLOGY

Country Status (1)

Country Link
PT (1) PT117332B (en)

Also Published As

Publication number Publication date
PT117332B (en) 2022-05-12

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