PL445766A1 - Harvester with RFID modulator - Google Patents

Harvester with RFID modulator

Info

Publication number
PL445766A1
PL445766A1 PL445766A PL44576623A PL445766A1 PL 445766 A1 PL445766 A1 PL 445766A1 PL 445766 A PL445766 A PL 445766A PL 44576623 A PL44576623 A PL 44576623A PL 445766 A1 PL445766 A1 PL 445766A1
Authority
PL
Poland
Prior art keywords
transistor
stage
harvester
gate
source
Prior art date
Application number
PL445766A
Other languages
Polish (pl)
Inventor
Piotr Z. Wieczorek
Krzysztof Gołofit
Original Assignee
Talkin Things Spółka Akcyjna
Politechnika Warszawska
Amorphic Technologies Spółka Z Ograniczoną Odpowiedzialnością
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Talkin Things Spółka Akcyjna, Politechnika Warszawska, Amorphic Technologies Spółka Z Ograniczoną Odpowiedzialnością filed Critical Talkin Things Spółka Akcyjna
Priority to PL445766A priority Critical patent/PL445766A1/en
Publication of PL445766A1 publication Critical patent/PL445766A1/en

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  • Amplitude Modulation (AREA)

Abstract

Harwester z modulatorem RFID posiada dwa zaciski wejściowe (RF1, RF2) i dwa zaciski wyjściowe (HRV, GND). Harwester zawiera przynajmniej dwa stopnie (S1, S2, S3), przy czym pojedynczy stopień (S2) zawiera dwa kondensatory (C1, C2) i dwa tranzystory (T1, T2), gdzie pierwszy kondensator (C1) dołączony jest do pierwszego zacisku wejściowego (RF1), a drugi kondensator (C2) dołączony jest do drugiego zacisku wejściowego (RF2). Tranzystory (T1, T2) połączone są drenami i dołączone do pierwszego kondensatora (C1), przy czym pierwszy tranzystor (T1) dołączony jest źródłem do wejścia danego stopnia (S2), a drugi tranzystor (T2) dołączony jest jego źródłem do drugiego kondensatora (C2) i do wyjścia danego stopnia (S2). Bramka jednego z tranzystorów (T1) w przynajmniej jednym stopniu harwestera (S2) dołączona jest do źródła drugiego tranzystora (T2) w tym samym stopniu, podczas gdy bramka i dren drugiego tranzystora (T2) w tym stopniu są połączone ze sobą. Przynajmniej w jednym stopniu harwestera (S1) bramka jednego z tranzystorów (Tw) dołączona jest jednocześnie do drugiego zacisku wejściowego (RF2) poprzez tranzystor modulujący (Tm) oraz do źródła tranzystora (Tz) stanowiącego źródło prądowe, podczas gdy bramka i dren drugiego tranzystora w tym stopniu (S1) są połączone ze sobą. Bramka tranzystora (Tz) realizującego źródło prądowe jest jednocześnie dołączona do jego drenu tego tranzystora i do wyjścia jednego ze stopni (S3) harwestera, a bramka tranzystora modulującego (Tm) dołączona jest do wejścia modulacji układu (M).The harvester with an RFID modulator has two input terminals (RF1, RF2) and two output terminals (HRV, GND). The harvester contains at least two stages (S1, S2, S3), where a single stage (S2) contains two capacitors (C1, C2) and two transistors (T1, T2), where the first capacitor (C1) is connected to the first input terminal ( RF1) and the second capacitor (C2) is connected to the second input terminal (RF2). The transistors (T1, T2) are connected with drains and connected to the first capacitor (C1), with the first transistor (T1) connected as the source to the input of a given stage (S2), and the second transistor (T2) connected as its source to the second capacitor ( C2) and to the output of the given stage (S2). The gate of one of the transistors (T1) in at least one harvester stage (S2) is connected to the source of the second transistor (T2) in the same stage, while the gate and drain of the second transistor (T2) in this stage are connected to each other. In at least one harvester stage (S1), the gate of one of the transistors (Tw) is connected simultaneously to the second input terminal (RF2) through a modulating transistor (Tm) and to the source of the transistor (Tz) constituting a current source, while the gate and drain of the second transistor in at this stage (S1) are connected to each other. The gate of the transistor (Tz) implementing the current source is simultaneously connected to its drain of this transistor and to the output of one of the stages (S3) of the harvester, and the gate of the modulating transistor (Tm) is connected to the modulation input of the system (M).

PL445766A 2023-08-05 2023-08-05 Harvester with RFID modulator PL445766A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL445766A PL445766A1 (en) 2023-08-05 2023-08-05 Harvester with RFID modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL445766A PL445766A1 (en) 2023-08-05 2023-08-05 Harvester with RFID modulator

Publications (1)

Publication Number Publication Date
PL445766A1 true PL445766A1 (en) 2024-04-08

Family

ID=90623542

Family Applications (1)

Application Number Title Priority Date Filing Date
PL445766A PL445766A1 (en) 2023-08-05 2023-08-05 Harvester with RFID modulator

Country Status (1)

Country Link
PL (1) PL445766A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070236851A1 (en) * 2006-03-31 2007-10-11 Broadcom Corporation, A California Corporation Power generating circuit
US7944279B1 (en) * 2009-12-31 2011-05-17 Nxp B.V. Charge pump stage of radio-frequency identification transponder
US20120049937A1 (en) * 2010-08-27 2012-03-01 Nxp B.V. High efficiency charge pump
US20120119822A1 (en) * 2010-11-16 2012-05-17 Stmicroelectronics (Rousset) Sas Method for Modulating the Impedance of an Antenna Circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070236851A1 (en) * 2006-03-31 2007-10-11 Broadcom Corporation, A California Corporation Power generating circuit
US7944279B1 (en) * 2009-12-31 2011-05-17 Nxp B.V. Charge pump stage of radio-frequency identification transponder
US20120049937A1 (en) * 2010-08-27 2012-03-01 Nxp B.V. High efficiency charge pump
US20120119822A1 (en) * 2010-11-16 2012-05-17 Stmicroelectronics (Rousset) Sas Method for Modulating the Impedance of an Antenna Circuit

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