PL428877A1 - Method for producing powder kesterite of Cu₂SnZnS₄ type, intended for production of active layers in thin film photovoltaic cells - Google Patents
Method for producing powder kesterite of Cu₂SnZnS₄ type, intended for production of active layers in thin film photovoltaic cellsInfo
- Publication number
- PL428877A1 PL428877A1 PL428877A PL42887719A PL428877A1 PL 428877 A1 PL428877 A1 PL 428877A1 PL 428877 A PL428877 A PL 428877A PL 42887719 A PL42887719 A PL 42887719A PL 428877 A1 PL428877 A1 PL 428877A1
- Authority
- PL
- Poland
- Prior art keywords
- kesterite
- cu2snzns4
- hours
- photovoltaic cells
- intended
- Prior art date
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Przedmiotem zgłoszenia jest sposób wytwarzania proszkowego kesterytu typu Cu2SnZnS4, przeznaczonego do produkcji, warstw czynnych w cienkowarstwowych ogniwach fotowoltaicznych, który polega na tym, że najpierw rozdrabnia się materiały odpadowe i zużyte wyroby w postaci dwuskładnikowych brązów cynowych Cu+Sn i dwuskładnikowych mosiądzów Cu+Zn, o znanym typie i na podstawie składu chemicznego tych materiałów określa się zawartość rzeczywistą pojedynczych metali Cu, Sn i Zn w mieszaninie, dążąc do uzyskania zawartości teoretycznej występującej w kesterycie, a mianowicie stosunku molowego Cu:Sn:Zn = 2:1:1. W przypadku niedoboru metali Zn i Sn uzupełnia się brakującą ilość w stosunku do teoretycznej poprzez dodatek proszków czystych metali Sn i Zn. Następnie rozdrobnione materiały wsadowe mieli się w wysokoenergetycznym młynie kulowym z dodatkiem cieczy dyspergującej w postaci wysokowrzących ciekłych węglowodorów alifatycznych lub aromatycznych wybranych z grupy obejmującej heksan, toluen i ksylen w czasie od 30 minut do 100 godzin, przy prędkości obrotowej młyna 200 do 1100 obr/min, po czym do mieszaniny dodaje się siarkę elementarną w ilości od stechiometrycznej do 100% nadmiaru w stosunku do ilości teoretycznej siarki występującej w kesterycie typu Cu2SnZnS4 i dalej mieli przez 30 minut do 100 godzin przy prędkości obrotowej młyna kulowego 200 - 1100 obr/min. Po zakończeniu procesu odparowuje się ciecz dyspergującą, a uzyskaną mieszaninę ogrzewa się w atmosferze gazu obojętnego w temperaturze od 400 do 700°C przez okres od 0,5 do 36 godzin, uzyskując proszkowy czysty kesteryt o średniej wielkości krystalitów w zakresie od 10 do 200 nm.The subject of the application is a method of producing Cu2SnZnS4 type powdered kesterite intended for the production of active layers in thin-film photovoltaic cells, which consists in first shredding waste materials and used products in the form of Cu + Sn two-component tin bronze and Cu + Zn two-component brass, of known type and on the basis of the chemical composition of these materials, the actual content of the single metals Cu, Sn and Zn in the mixture is determined in order to obtain the theoretical content of the kesterite, namely the molar ratio of Cu: Sn: Zn = 2: 1: 1. In the case of a deficiency of metals Zn and Sn, the missing amount in relation to the theoretical amount is supplemented by the addition of pure metal powders Sn and Zn. Then, the comminuted charge materials were ground in a high-energy ball mill with the addition of a dispersing liquid in the form of high-boiling liquid aliphatic or aromatic hydrocarbons selected from the group consisting of hexane, toluene and xylene for 30 minutes to 100 hours, at a rotational speed of the mill of 200 to 1100 rpm. elemental sulfur is then added to the mixture in an amount ranging from stoichiometric to 100% excess in relation to the theoretical amount of sulfur present in the Cu2SnZnS4 kesterite, and further ground for 30 minutes to 100 hours at a rotational speed of the ball mill of 200-1100 rpm. After completion of the process, the dispersing liquid is evaporated, and the resulting mixture is heated in an inert gas atmosphere at a temperature of 400 to 700 ° C for 0.5 to 36 hours, obtaining pure kesterite powder with an average crystallite size in the range of 10 to 200 nm .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL428877A PL241416B1 (en) | 2019-02-11 | 2019-02-11 | Method for producing powder kesterite of Cu₂SnZnS₄ type, intended for production of active layers in thin film photovoltaic cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL428877A PL241416B1 (en) | 2019-02-11 | 2019-02-11 | Method for producing powder kesterite of Cu₂SnZnS₄ type, intended for production of active layers in thin film photovoltaic cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL428877A1 true PL428877A1 (en) | 2019-10-21 |
| PL241416B1 PL241416B1 (en) | 2022-09-26 |
Family
ID=68238710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL428877A PL241416B1 (en) | 2019-02-11 | 2019-02-11 | Method for producing powder kesterite of Cu₂SnZnS₄ type, intended for production of active layers in thin film photovoltaic cells |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL241416B1 (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010135622A1 (en) * | 2009-05-21 | 2010-11-25 | E. I. Du Pont De Nemours And Company | Copper zinc tin chalcogenide nanoparticles |
| US20120055554A1 (en) * | 2009-05-21 | 2012-03-08 | E.I. Du Pont De Nemours And Company | Copper zinc tin chalcogenide nanoparticles |
| US20120100664A1 (en) * | 2010-10-26 | 2012-04-26 | International Business Machines Corporation | Fabricating kesterite solar cells and parts thereof |
| US8366975B2 (en) * | 2010-05-21 | 2013-02-05 | E I Du Pont De Nemours And Company | Atypical kesterite compositions |
| US20130037111A1 (en) * | 2011-08-10 | 2013-02-14 | International Business Machines Corporation | Process for Preparation of Elemental Chalcogen Solutions and Method of Employing Said Solutions in Preparation of Kesterite Films |
| PL406175A1 (en) * | 2013-11-21 | 2015-05-25 | Stanley Aleksander Rokicki | Carrying composite of photovoltaic cells |
| US20180069146A1 (en) * | 2016-09-02 | 2018-03-08 | International Business Machines Corporation | Minimizing Tin Loss During Thermal Processing of Kesterite Films |
| WO2018065156A1 (en) * | 2016-10-07 | 2018-04-12 | Haldor Topsøe A/S | KESTERITE MATERIAL OF CZTS, CZTSe OR CZTSSe TYPE |
| PL229752B1 (en) * | 2014-10-27 | 2018-08-31 | Politechnika Slaska | Photovoltaic dye cell and method for producing it |
-
2019
- 2019-02-11 PL PL428877A patent/PL241416B1/en unknown
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010135622A1 (en) * | 2009-05-21 | 2010-11-25 | E. I. Du Pont De Nemours And Company | Copper zinc tin chalcogenide nanoparticles |
| US20120055554A1 (en) * | 2009-05-21 | 2012-03-08 | E.I. Du Pont De Nemours And Company | Copper zinc tin chalcogenide nanoparticles |
| US8366975B2 (en) * | 2010-05-21 | 2013-02-05 | E I Du Pont De Nemours And Company | Atypical kesterite compositions |
| US20120100664A1 (en) * | 2010-10-26 | 2012-04-26 | International Business Machines Corporation | Fabricating kesterite solar cells and parts thereof |
| US20130037111A1 (en) * | 2011-08-10 | 2013-02-14 | International Business Machines Corporation | Process for Preparation of Elemental Chalcogen Solutions and Method of Employing Said Solutions in Preparation of Kesterite Films |
| PL406175A1 (en) * | 2013-11-21 | 2015-05-25 | Stanley Aleksander Rokicki | Carrying composite of photovoltaic cells |
| PL229752B1 (en) * | 2014-10-27 | 2018-08-31 | Politechnika Slaska | Photovoltaic dye cell and method for producing it |
| US20180069146A1 (en) * | 2016-09-02 | 2018-03-08 | International Business Machines Corporation | Minimizing Tin Loss During Thermal Processing of Kesterite Films |
| WO2018065156A1 (en) * | 2016-10-07 | 2018-04-12 | Haldor Topsøe A/S | KESTERITE MATERIAL OF CZTS, CZTSe OR CZTSSe TYPE |
Non-Patent Citations (1)
| Title |
|---|
| WOJSKOWA AKADEMIA TECHNICZNA IM. JAROSŁAWA DĄBROWSKIEGO, ADVANCES IN CZTS THIN FILMS AND NANOSTRUCTURED, 201S * |
Also Published As
| Publication number | Publication date |
|---|---|
| PL241416B1 (en) | 2022-09-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hages et al. | Controlled grain growth for high performance nanoparticle-based kesterite solar cells | |
| McCarthy et al. | Solution‐Phase Conversion of Bulk Metal Oxides to Metal Chalcogenides Using a Simple Thiol–Amine Solvent Mixture | |
| Yang et al. | Solution-processed highly efficient Cu2ZnSnSe4 thin film solar cells by dissolution of elemental Cu, Zn, Sn, and Se powders | |
| Zhang et al. | Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices | |
| TW201224071A (en) | A selenium/Group 1b/Group 3a ink and methods of making and using same | |
| CN102741450B (en) | Cu-in-ga-se quaternary alloy sputtering target | |
| Zhang et al. | Cation substitution induced structural transition, band gap engineering and grain growth of Cu2CdxZn1− xSnS4 thin films | |
| Takei et al. | Crystallographic and optical properties of CuSbS2 and CuSb (S1-xSex) 2 solid solution | |
| Yin et al. | Controllable Colloidal Synthesis of Tin (II) Chalcogenide Nanocrystals and Their Solution‐Processed Flexible Thermoelectric Thin Films | |
| Nolas et al. | Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M= Zn, Cd) | |
| Wibowo et al. | Crystallization of Cu2ZnSnSe4 compound by solid state reaction using elemental powders | |
| WO2011066203A1 (en) | Preparation of copper zinc tin sulfide | |
| Chen et al. | Low-temperature growth of Na doped CIGS films on flexible polymer substrates by pulsed laser ablation from a Na containing target | |
| CN102476791A (en) | Method for preparing copper indium diselenide nanometer powder | |
| Tsega et al. | The performance of the donor and acceptor doping in the Cu-rich Cu2ZnSnSe4 bulks with different Zn/Sn ratios | |
| Ju et al. | Anion-exchanged porous SnTe nanosheets for ultra-low thermal conductivity and high-performance thermoelectrics | |
| Sun et al. | High-sulfur Cu2ZnSn (S, Se) 4 films by sulfurizing as-deposited CZTSe film: The evolutions of phase, crystallinity and S/(S+ Se) ratio | |
| Alruqobah et al. | Potassium treatments for solution-processed Cu (In, Ga)(S, Se) 2 solar cells | |
| Singh et al. | Fabrication of band gap tuned Cu2Zn (Sn1-xGex)(S, Se) 4 absorber thin film using nanocrystal-based ink in non-toxic solvent | |
| Johnson et al. | First principles calculations of the optoelectronic properties of magnesium substitutes in Lead based ABX3 compounds | |
| Feng et al. | Influence of annealing temperature on CZTS thin film surface properties | |
| Li et al. | Transmission electron microscopy analysis for the process of crystallization of film from sputtered Zn/CuSn precursor | |
| PL428877A1 (en) | Method for producing powder kesterite of Cu₂SnZnS₄ type, intended for production of active layers in thin film photovoltaic cells | |
| PL428878A1 (en) | Method for producing powder kesterite of Cu₂SnZnS₄ type | |
| Dejene | Material and device properties of Cu (In, Ga) Se2 absorber films prepared by thermal reaction of InSe/Cu/GaSe alloys to elemental Se vapor |