PL42516B3 - - Google Patents

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Publication number
PL42516B3
PL42516B3 PL42516A PL4251658A PL42516B3 PL 42516 B3 PL42516 B3 PL 42516B3 PL 42516 A PL42516 A PL 42516A PL 4251658 A PL4251658 A PL 4251658A PL 42516 B3 PL42516 B3 PL 42516B3
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PL
Poland
Prior art keywords
aluminum sulphate
crystals
crystallizer
inlet part
crystallization
Prior art date
Application number
PL42516A
Other languages
Polish (pl)
Filing date
Publication date
Application filed filed Critical
Publication of PL42516B3 publication Critical patent/PL42516B3/pl

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Description

1 1J Opublikowano dnia 5 grudnia 1959 r. jy £ 4l iXAi POLSKIEJ RZECZYPOSPOLITEJ LUDOWEJ OPIS PATENTOWY ..#% Nr 42516 VI. femf Instytut Chemii Ogólnej*) Warszawa, Polska Sposób otrzymywania czystego siarczanu glinowego Patent dodatkowy do patentu nr 35742 Patent trwa od dnia 30 maja 1958 r.W patencie nr 35742 opisano sposób otrzy¬ mywania czystego siarczanu glinowego z roz¬ tworu technicznego siarczanu glinowego, za¬ nieczyszczonego siarczanami zelaza i innych me¬ tali oraz sposób wykrystalizowania czystego siarczanu glinu z takich roztworów.Sposób ten polega na zaszczepianiu nasycone¬ go roztworu siarczanu glinowego krysztalami tego zwiazku i na powolnym zwiekszaniu prze¬ sycenia przez stopniowe wprowadzanie do tak otrzymanej zawiesiny stezonego kwasu siar¬ kowego, przy równoczesnym mieszaniu i chlo¬ dzeniu cieczy. Wada opisanej metody jest brak . ciaglosci pracy wskutek periodycznego wyko¬ nywania operacji krystalizacji.Okazalo sie, ze mozna prowadzic krystaliza¬ cje siarczanu glinowego sposobem ciaglym we¬ dlug patentu nr 35742 w znanych urzadzeniach.*) Wlasciciel patentu oswiadczyl, ze twórca wynalazku jest prof. dr Stanislaw Bretsznajder.W tym celu nalezy stosowac zaszczepianie krysztalami siarczanu glinowego mieszaniny krystalizujacej, znajdujacej sie we wlotowej czesci aparatury do ciaglej krystalizacji dopro¬ wadzajac tam powoli stale (osobno lub zmie¬ szane z soba) roztwory technicznego siarczanu glinowego i kwasu siarkowego, mieszajac za¬ wartosc krystalizatora i stopniowo obnizajac temperature mieszaniny krystalizujacej w mia¬ re jej posuwania sie w kierunku wylotu kry¬ stalizatora.Zaszczepienie roztworu w czesci wlotowej mozna osiagnac, na przyklad zawracajac czesc opuszczajacej krystalizator mieszaniny lugu po- krystalicznego z zawiesina krysztalów z powro¬ tem do czesci wlotowej krystalizatora. Mozna równiez do krystalizatora wprowadzic przy roz¬ poczynaniu procesu pewna ilosc krysztalów siarczanu glinowego, a nastepnie tak utrzymy¬ wac warunki przesycania, aby w cieczy wytra¬ calo sie tyle krysztalów siarczanu glinowego,ite Jcfr zestale odprowadzone x przeplywajacym strumieniem do dalszej czesci aparatury.W obu przypadkach tak prowadzi sie proces, aby stezenie krysztalów siarczanu glinowego w czesci wlotowej krystalizatora ciaglego bylo stale.Krysztaly te sluza jako szczepionka i proces krystalizacji w opisanych warunkach przebie¬ ga zgodnie z wymaganiami sformulowanymi w patencie nr 95742. PL1 1J Published on December 5, 1959 jy £ 4l iXAi POLISH PEOPLE'S REPUBLIC PATENT DESCRIPTION .. #% No. 42516 VI. femf Institute of General Chemistry *) Warsaw, Poland The method of obtaining pure aluminum sulphate. Additional patent to patent no. 35742 The patent is valid from May 30, 1958. The patent no. 35742 describes the method of obtaining pure aluminum sulphate from a technical solution of aluminum sulphate, contaminated sulfates of iron and other metals, and a method of crystallizing pure aluminum sulfate from such solutions. This method consists in seeding a saturated solution of aluminum sulfate with crystals of this compound and slowly increasing the saturation by gradually introducing concentrated sulfuric acid into the suspension thus obtained. while mixing and cooling the liquid. The disadvantage of the described method is lack. continuous operation due to periodic crystallization operations. It turned out that it was possible to carry out the crystallization of aluminum sulphate continuously according to patent No. 35742 in known devices. *) The patent owner stated that the inventor is prof. Dr. Stanislaw Bretsznajder. For this purpose, it is necessary to seed the crystallization mixture, located in the inlet part of the apparatus for continuous crystallization, with aluminum sulphate crystals, slowly supplying there continuously (separately or mixed with each other) solutions of technical aluminum sulphate and sulfuric acid, mixing with ¬ the value of the crystallizer and gradually lowering the temperature of the crystallizing mixture as it advances towards the outlet of the crystallizer. Inoculation of the solution in the inlet part may be achieved, for example, by recycling a part of the crystalline slurry mixture leaving the crystallizer from the crystalline slurry back to inlet part of the crystallizer. It is also possible to introduce a certain amount of aluminum sulphate crystals into the crystallizer at the start of the process, and then maintain the supersaturation conditions so that as many aluminum sulphate crystals are precipitated in the liquid and that the solids are carried away by the flowing stream to the rest of the apparatus. In both cases, the process is carried out in such a way that the concentration of the aluminum sulphate crystals in the inlet part of the solid crystallizer is constant. These crystals serve as a vaccine and the crystallization process under the described conditions proceeds in accordance with the requirements set out in patent No. 95742. PL

Claims (1)

1. Zastrzezenie patentowe Sposób otrzymywania czystego siarczanu gli¬ nowego wedlug patentu nr 35742 znamienny tym, ze proces krystalizacji siarczanu glinowe¬ go prowadzi sie w sposób ciagly, doprowadza¬ jac roztwory technicznego siarczanu glinowego i kwasu siarkowego do czesci wlotowej urzadze¬ nia do ciaglej krystalizacji, w której utrzymuje sie stale stezenie krysztalów siarczanu glino¬ wego. Instytut Chemii Ogólnej Wzór Jednorai. CWD, zam. PL/Ke. Czeit. zam. 2068 7. 9. 59. 100 «gz. Al pism. ki, 3. 4 PLClaim 1. The method of obtaining pure aluminum sulphate according to patent No. 35742, characterized in that the crystallization process of aluminum sulphate is carried out continuously, supplying solutions of technical aluminum sulphate and sulfuric acid to the inlet part of the continuous crystallization device in which the concentration of aluminum sulphate crystals is kept constant. Institute of General Chemistry Model Jednorai. CWD, res. PL / Ke. Czeit. residing 2068 7. 9. 59. 100 "gz. Al writings. ki, 3. 4 PL
PL42516A 1958-05-30 PL42516B3 (en)

Publications (1)

Publication Number Publication Date
PL42516B3 true PL42516B3 (en) 1959-08-15

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