PL408339A1 - Poly[2,7-bis(2-thiophene)-9,9-dimethylxanthene], method of obtaining and application in a semiconductor material - Google Patents
Poly[2,7-bis(2-thiophene)-9,9-dimethylxanthene], method of obtaining and application in a semiconductor materialInfo
- Publication number
- PL408339A1 PL408339A1 PL408339A PL40833914A PL408339A1 PL 408339 A1 PL408339 A1 PL 408339A1 PL 408339 A PL408339 A PL 408339A PL 40833914 A PL40833914 A PL 40833914A PL 408339 A1 PL408339 A1 PL 408339A1
- Authority
- PL
- Poland
- Prior art keywords
- dimethylxanthene
- bis
- thiophene
- poly
- formula
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 abstract 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 abstract 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 abstract 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 abstract 1
- NVHOWSXDIDUIDZ-UHFFFAOYSA-N 2,7-dibromo-9,9-dimethylxanthene Chemical compound C1=C(Br)C=C2C(C)(C)C3=CC(Br)=CC=C3OC2=C1 NVHOWSXDIDUIDZ-UHFFFAOYSA-N 0.000 abstract 1
- TUCRZHGAIRVWTI-UHFFFAOYSA-N 2-bromothiophene Chemical compound BrC1=CC=CS1 TUCRZHGAIRVWTI-UHFFFAOYSA-N 0.000 abstract 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 abstract 1
- 229940093475 2-ethoxyethanol Drugs 0.000 abstract 1
- 101100030361 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) pph-3 gene Proteins 0.000 abstract 1
- 238000009835 boiling Methods 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910000027 potassium carbonate Inorganic materials 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
Landscapes
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Abstract
Wynalazek dotyczy poli[2,7-bis(2-tiofeno)-9,9-dimetyloksantenu], o wzorze 1, przeznaczonego do budowy urządzeń optoelektonicznych. Przedmiotem wynalazku jest także sposób wytwarzania poli[2,7-bis(2-tiofeno)-9,9-dimetyloksantenu] o wzorze 1, który polega na tym, że w pierwszym etapie 2,7-dibromo-9,9-dimetyloksantenu poddaje się reakcji z 4,4,5,5-tetrametylo-2,1,3-dioksoborolanem w roztworze trietyloaminy (Net3) oraz dioksanu w obecności katalizatora palladowego - Pd(PPh3)4.Następnie w drugim etapie prowadzi się reakcję syntezy 2,7-bis(4,4,5,5-tetrametylo-2,1,3-dioksoborolan-2-ylo)-9,9-dimetyloksantenu z 2-bromotiofenem, przy czym reakcję prowadzi się w roztworze 2-etoksyetanolu oraz węglanu potasu w temperaturze wrzenia rozpuszczalnika w atmosferze azotu przez 24 godziny, a otrzymany produkt w postaci 2,7-bis(2-tiofeno)-9,9-dimetyloksantenu poddaje się elektropolimeryzacji. Rozwiązanie obejmuje też zastosowanie poli[2,7-bis(2-tiofeno)-9,9-dimetyloksantenu] o wzorze 1 do wytwarzania materiału półprzewodnikowego zawierającego warstwę aktywną w postaci filmu elektropolimerowego otrzymanego z poli[2,7-bis(2-tiofeno)-9,9-dimetyloksantenu] nałożonego na polikrystaliczną elektrody platynowe.The invention relates to poly [2,7-bis (2-thiophene) -9,9-dimethylxanthene], of formula 1, intended for the construction of optoelectonic devices. The invention also relates to a process for producing poly [2,7-bis (2-thiophene) -9,9-dimethylxanthene] of formula 1, which consists in the fact that in the first stage 2,7-dibromo-9,9-dimethylxanthene undergoes reaction with 4,4,5,5-tetramethyl-2,1,3-dioxoborolate in a solution of triethylamine (Net3) and dioxane in the presence of a palladium catalyst - Pd (PPh3) 4. Next, a synthesis reaction of 2.7 is carried out in a second stage -bis (4,4,5,5-tetramethyl-2,1,3-dioxoborolan-2-yl) -9,9-dimethylxanthene with 2-bromothiophene, the reaction being carried out in a solution of 2-ethoxyethanol and potassium carbonate in the boiling point of the solvent under nitrogen for 24 hours, and the obtained 2,7-bis (2-thiophene) -9,9-dimethylxanthene product is subjected to electropolymerization. The solution also includes the use of poly [2,7-bis (2-thiophene) -9,9-dimethylxanthene] of formula 1 for the production of a semiconductor material containing an active layer in the form of an electropolymer film obtained from poly [2,7-bis (2-thiophene) ) -9,9-dimethylxanthene] applied to a polycrystalline platinum electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL408339A PL223976B1 (en) | 2014-05-27 | 2014-05-27 | Poly[2,7-bis(2-thiophene)-9,9-dimethylxanthene], method of obtaining and application in a semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL408339A PL223976B1 (en) | 2014-05-27 | 2014-05-27 | Poly[2,7-bis(2-thiophene)-9,9-dimethylxanthene], method of obtaining and application in a semiconductor material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL408339A1 true PL408339A1 (en) | 2015-02-16 |
| PL223976B1 PL223976B1 (en) | 2016-11-30 |
Family
ID=52464748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL408339A PL223976B1 (en) | 2014-05-27 | 2014-05-27 | Poly[2,7-bis(2-thiophene)-9,9-dimethylxanthene], method of obtaining and application in a semiconductor material |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL223976B1 (en) |
-
2014
- 2014-05-27 PL PL408339A patent/PL223976B1/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| PL223976B1 (en) | 2016-11-30 |
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