PL406026A1 - Method for obtaining platform for testing chemical substances by the technique of surface strengthened Raman spectroscopy and platform obtained by this method - Google Patents

Method for obtaining platform for testing chemical substances by the technique of surface strengthened Raman spectroscopy and platform obtained by this method

Info

Publication number
PL406026A1
PL406026A1 PL406026A PL40602613A PL406026A1 PL 406026 A1 PL406026 A1 PL 406026A1 PL 406026 A PL406026 A PL 406026A PL 40602613 A PL40602613 A PL 40602613A PL 406026 A1 PL406026 A1 PL 406026A1
Authority
PL
Poland
Prior art keywords
layer
platform
silicon substrate
zinc oxide
raman spectroscopy
Prior art date
Application number
PL406026A
Other languages
Polish (pl)
Other versions
PL224311B1 (en
Inventor
Elżbieta Guziewicz
Dmytro Snigurenko
Krzysztof Kopalko
Evelin Witkowska
Tomasz Szymborski
Agnieszka Michota-Kamińska
Original Assignee
Instytut Chemii Fizycznej Polskiej Akademii Nauk
Instytut Fizyki Polskiej Akademii Nauk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Chemii Fizycznej Polskiej Akademii Nauk, Instytut Fizyki Polskiej Akademii Nauk filed Critical Instytut Chemii Fizycznej Polskiej Akademii Nauk
Priority to PL406026A priority Critical patent/PL224311B1/en
Publication of PL406026A1 publication Critical patent/PL406026A1/en
Publication of PL224311B1 publication Critical patent/PL224311B1/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons

Abstract

Przedmiotem wynalazku jest sposób otrzymywania platformy do badań substancji chemicznych techniką wzmocnionej powierzchniowo spektroskopii Ramana, zawierającej powierzchnię stanowiącą warstwę tlenku cynku o wysoce rozbudowanej powierzchni osadzoną na podłożu krzemowym i pokrytą warstwą złota, charakteryzujący się tym, że najpierw wstępnie przygotowuje się podłoże krzemowe; następnie takie podłoże poddaje się procesowi osadzania warstw atomowych (tzw. metoda ALD), gdzie w wyniku chemicznej reakcji wymiany zachodzi proces osadzania warstw tlenku cynku, który prowadzi się w sposób cykliczny, z użyciem prekursora tlenowego, prekursora cynku i gazu płuczącego, przy czym grubość otrzymanej warstwy jest zdeterminowana ilością cykli ALD, w wyniku czego otrzymuje się podłoże krzemowe pokryte warstwą tlenku cynku o silnie rozwiniętej morfologii powierzchni, takiej, że wartość odchylenia standardowego chropowatości powierzchni (ang. Root Mean Square, RMS) przekracza wartość 60 nm, po czym na tak otrzymane podłoże krzemowe pokryte warstwą tlenku cynku nanosi się złoto, metodą PVD (ang. Physical Vapor Deposition - fizyczne osadzanie z fazy gazowej). Ponadto wynalazek obejmuje tak otrzymaną platformę.The subject of the invention is a method for obtaining a platform for testing chemical substances by surface enhanced Raman spectroscopy, comprising a surface constituting a layer of zinc oxide with a highly developed surface deposited on a silicon substrate and coated with a layer of gold, characterized in that the silicon substrate is first pre-prepared; then such a substrate is subjected to the process of atomic layer deposition (so-called ALD method), where as a result of a chemical exchange reaction the process of deposition of zinc oxide layers occurs, which is carried out in a cyclical manner, using an oxygen precursor, zinc precursor and scrubbing gas, the thickness being the obtained layer is determined by the number of ALD cycles, resulting in a silicon substrate coated with a layer of zinc oxide with a highly developed surface morphology, such that the value of the surface roughness standard deviation (Root Mean Square (RMS) exceeds the value of 60 nm, then the silicon substrate thus obtained covered with a layer of zinc oxide is applied to gold, by the PVD (Physical Vapor Deposition) method. Furthermore, the invention includes the platform thus obtained.

PL406026A 2013-11-13 2013-11-13 Method for obtaining platform for testing chemical substances by the technique of surface strengthened Raman spectroscopy and platform obtained by this method PL224311B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL406026A PL224311B1 (en) 2013-11-13 2013-11-13 Method for obtaining platform for testing chemical substances by the technique of surface strengthened Raman spectroscopy and platform obtained by this method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL406026A PL224311B1 (en) 2013-11-13 2013-11-13 Method for obtaining platform for testing chemical substances by the technique of surface strengthened Raman spectroscopy and platform obtained by this method

Publications (2)

Publication Number Publication Date
PL406026A1 true PL406026A1 (en) 2015-05-25
PL224311B1 PL224311B1 (en) 2016-12-30

Family

ID=53175981

Family Applications (1)

Application Number Title Priority Date Filing Date
PL406026A PL224311B1 (en) 2013-11-13 2013-11-13 Method for obtaining platform for testing chemical substances by the technique of surface strengthened Raman spectroscopy and platform obtained by this method

Country Status (1)

Country Link
PL (1) PL224311B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020113706A1 (en) * 2018-12-06 2020-06-11 中国科学院苏州纳米技术与纳米仿生研究所 Application of semiconductor compound in benzaldehyde specificity detection and detection method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020113706A1 (en) * 2018-12-06 2020-06-11 中国科学院苏州纳米技术与纳米仿生研究所 Application of semiconductor compound in benzaldehyde specificity detection and detection method therefor

Also Published As

Publication number Publication date
PL224311B1 (en) 2016-12-30

Similar Documents

Publication Publication Date Title
Broas et al. Chemically stable atomic-layer-deposited Al2O3 films for processability
EP3686920A3 (en) Method of enabling seamless cobalt gap-fill
WO2010071364A3 (en) Organometallic precursor compound for thin film vapor deposition of metallic or metal oxide thin film and method for thin film vapor deposition using same
WO2010062582A3 (en) Vapor deposition method for ternary compounds
TW201612352A (en) Method for hydrophobization of surface of silicon-containing film by ALD
WO2012167141A3 (en) Metal and silicon containing capping layers for interconnects
WO2013177269A3 (en) Zirconium-containing precursors for vapor deposition
DE602007005017D1 (en) PROCESS FOR EASILY CLEANING SUBSTRATES AND ARTICLES THEREOF
WO2012118955A3 (en) Apparatus and process for atomic layer deposition
TW200622022A (en) A method and system for forming a passivated metal layer
WO2010054075A3 (en) Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films
WO2009134840A3 (en) Selective cobalt deposition on copper surfaces
ATE491227T1 (en) METHOD FOR PRODUCING INTERCONNECT CONNECTIONS FOR SEMICONDUCTOR COMPONENTS
JP2012004549A5 (en) Semiconductor device
ATE467700T1 (en) ALD PROCESS FOR DEPOSITION OF A LAYER
GB201216405D0 (en) Multilayer coated wear-resistant member and method for making the same
WO2017062355A3 (en) Methods for depositing dielectric barrier layers and aluminum containing etch stop layers
BR112014000395A2 (en) mixed metal oxide barrier films and atomic layer deposition method for preparing mixed metal oxide barrier films
TW201129497A (en) silicon substrate having nanostructures and method for producing the same and application thereof
EA201001020A1 (en) GLASS PRODUCT AND METHOD OF MANUFACTURING A GLASS PRODUCT
RU2015144306A (en) METHOD FOR PREPARING AND PROCESSING STEEL SUBSTRATE
MX336541B (en) Silicon thin film solar cell having improved haze and methods of making the same.
EA201190323A1 (en) PROTECTIVE COATING, METHOD OF PROTECTING SUBSTRATES AND USING THIS METHOD
JP2015522509A5 (en)
JP2017042903A5 (en) Method for manufacturing surface-coated cutting tool