PL313650A1 - Epitaxial junction structure of gainas/inp photodiode and method of obtaining such structure - Google Patents

Epitaxial junction structure of gainas/inp photodiode and method of obtaining such structure

Info

Publication number
PL313650A1
PL313650A1 PL31365096A PL31365096A PL313650A1 PL 313650 A1 PL313650 A1 PL 313650A1 PL 31365096 A PL31365096 A PL 31365096A PL 31365096 A PL31365096 A PL 31365096A PL 313650 A1 PL313650 A1 PL 313650A1
Authority
PL
Poland
Prior art keywords
gainas
obtaining
epitaxial junction
inp photodiode
junction structure
Prior art date
Application number
PL31365096A
Other versions
PL179661B1 (en
Inventor
Tadeusz Janicki
Maciej Wegrzecki
Original Assignee
Inst Tech Elektronowej
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Tech Elektronowej filed Critical Inst Tech Elektronowej
Priority to PL31365096A priority Critical patent/PL179661B1/en
Publication of PL313650A1 publication Critical patent/PL313650A1/en
Publication of PL179661B1 publication Critical patent/PL179661B1/en

Links

PL31365096A 1996-04-05 1996-04-05 Epitaxial junction structure of the GalnAs / InP photodiode and the method of making the epitaxial junction structure of the GalnAs / lnP photodiode PL179661B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PL31365096A PL179661B1 (en) 1996-04-05 1996-04-05 Epitaxial junction structure of the GalnAs / InP photodiode and the method of making the epitaxial junction structure of the GalnAs / lnP photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PL31365096A PL179661B1 (en) 1996-04-05 1996-04-05 Epitaxial junction structure of the GalnAs / InP photodiode and the method of making the epitaxial junction structure of the GalnAs / lnP photodiode

Publications (2)

Publication Number Publication Date
PL313650A1 true PL313650A1 (en) 1997-10-13
PL179661B1 PL179661B1 (en) 2000-10-31

Family

ID=20067259

Family Applications (1)

Application Number Title Priority Date Filing Date
PL31365096A PL179661B1 (en) 1996-04-05 1996-04-05 Epitaxial junction structure of the GalnAs / InP photodiode and the method of making the epitaxial junction structure of the GalnAs / lnP photodiode

Country Status (1)

Country Link
PL (1) PL179661B1 (en)

Also Published As

Publication number Publication date
PL179661B1 (en) 2000-10-31

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