PL2702648T3 - Międzypasmowe lasery kaskadowe z projektowanymi gęstościami nośnika - Google Patents

Międzypasmowe lasery kaskadowe z projektowanymi gęstościami nośnika

Info

Publication number
PL2702648T3
PL2702648T3 PL12774690T PL12774690T PL2702648T3 PL 2702648 T3 PL2702648 T3 PL 2702648T3 PL 12774690 T PL12774690 T PL 12774690T PL 12774690 T PL12774690 T PL 12774690T PL 2702648 T3 PL2702648 T3 PL 2702648T3
Authority
PL
Poland
Prior art keywords
cascade lasers
carrier densities
interband cascade
engineered carrier
engineered
Prior art date
Application number
PL12774690T
Other languages
English (en)
Inventor
Igor Vurgaftman
Jerry R. Meyer
Chadwick Lawrence CANEDY
William W. Bewley
Chul Soo Kim
Mijin Kim
Charles D. Merritt
Original Assignee
The Government Of The United States Of America As Represented By The Secretary Of The Navy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Government Of The United States Of America As Represented By The Secretary Of The Navy filed Critical The Government Of The United States Of America As Represented By The Secretary Of The Navy
Publication of PL2702648T3 publication Critical patent/PL2702648T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
PL12774690T 2011-04-20 2012-03-16 Międzypasmowe lasery kaskadowe z projektowanymi gęstościami nośnika PL2702648T3 (pl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161477191P 2011-04-20 2011-04-20
US201261596870P 2012-02-09 2012-02-09
EP12774690.7A EP2702648B1 (en) 2011-04-20 2012-03-16 Interband cascade lasers with engineered carrier densities
PCT/US2012/029396 WO2012145103A1 (en) 2011-04-20 2012-03-16 Interband cascade lasers with engineered carrier densities

Publications (1)

Publication Number Publication Date
PL2702648T3 true PL2702648T3 (pl) 2018-09-28

Family

ID=47021309

Family Applications (1)

Application Number Title Priority Date Filing Date
PL12774690T PL2702648T3 (pl) 2011-04-20 2012-03-16 Międzypasmowe lasery kaskadowe z projektowanymi gęstościami nośnika

Country Status (5)

Country Link
US (2) US8798111B2 (pl)
EP (1) EP2702648B1 (pl)
JP (1) JP2013527629A (pl)
PL (1) PL2702648T3 (pl)
WO (1) WO2012145103A1 (pl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL2702648T3 (pl) * 2011-04-20 2018-09-28 The Government Of The United States Of America As Represented By The Secretary Of The Navy Międzypasmowe lasery kaskadowe z projektowanymi gęstościami nośnika
CN103545713B (zh) * 2013-10-31 2015-11-11 中国科学院半导体研究所 一种具有w型有源区结构的带间级联激光器
JP6259325B2 (ja) * 2014-03-12 2018-01-10 浜松ホトニクス株式会社 量子カスケードレーザ
DE102014106209B3 (de) * 2014-05-05 2015-08-27 Nanoplus Nanosystems And Technologies Gmbh Interbandkaskadenlaser sowie Verfahren zur Herstellung eines Interbandkaskadenlasers umfassend ein Rückkopplungselement
WO2017039767A1 (en) 2015-06-05 2017-03-09 Teh Government Of The United States Of America, As Represented By The Secretary Of The Navy Interband cascade lasers with low-fill factor top contact for reduced loss
FR3048561B1 (fr) * 2016-03-03 2019-03-15 Centre National De La Recherche Scientifique Laser a cascade quantique.
JP2019519120A (ja) 2016-06-24 2019-07-04 ザ ガバメント オブ ザ ユナイテッド ステイツ オブ アメリカ，アズ リプレゼンテッド バイ ザ セクレタリー オブ ザ ネイビー 成長したトップクラッド層を全く有しないか、又は薄いトップクラッド層を有する弱屈折率導波型インターバンドカスケードレーザ
CN110959234B (zh) * 2017-07-17 2021-08-13 统雷有限公司 中红外垂直腔激光器
GB202002785D0 (en) * 2020-02-27 2020-04-15 Univ Surrey Reducing auger recombination in semiconductor optical devices

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5457709A (en) 1994-04-04 1995-10-10 At&T Ipm Corp. Unipolar semiconductor laser
US5588015A (en) 1995-08-22 1996-12-24 University Of Houston Light emitting devices based on interband transitions in type-II quantum well heterostructures
US5793787A (en) 1996-01-16 1998-08-11 The United States Of America As Represented By The Secretary Of The Navy Type II quantum well laser with enhanced optical matrix
US5799026A (en) * 1996-11-01 1998-08-25 The United States Of America As Represented By The Secretary Of The Navy Interband quantum well cascade laser, with a blocking quantum well for improved quantum efficiency
US6423984B1 (en) * 1998-09-10 2002-07-23 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride compound semiconductor
US6404791B1 (en) * 1999-10-07 2002-06-11 Maxion Technologies, Inc. Parallel cascade quantum well light emitting device
US6316124B1 (en) 2000-01-13 2001-11-13 The United States Of America As Represented By The Secretary Of The Navy Modified InAs hall elements
US7485476B2 (en) 2003-08-06 2009-02-03 Yissum Research Development Company Of The Hebrew University Of Jerusalem Terahertz radiating device based on semiconductor coupled quantum wells
US20070008999A1 (en) * 2004-06-07 2007-01-11 Maxion Technologies, Inc. Broadened waveguide for interband cascade lasers
US7286573B1 (en) * 2004-08-12 2007-10-23 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration (Nasa) Conversion of type of quantum well structure
US7282777B1 (en) 2004-09-27 2007-10-16 California Institute Of Technology Interband cascade detectors
US7962670B2 (en) 2007-06-06 2011-06-14 Lantiq Deutschland Gmbh Pin multiplexing
JP5127430B2 (ja) * 2007-12-25 2013-01-23 キヤノン株式会社 レーザ素子
US8125706B2 (en) * 2008-10-20 2012-02-28 The United States Of America As Represented By The Secretary Of The Navy High-temperature interband cascade lasers
US8290011B2 (en) * 2010-11-22 2012-10-16 The United States Of America, As Represented By The Secretary Of The Navy Interband cascade lasers
PL2702648T3 (pl) * 2011-04-20 2018-09-28 The Government Of The United States Of America As Represented By The Secretary Of The Navy Międzypasmowe lasery kaskadowe z projektowanymi gęstościami nośnika

Also Published As

Publication number Publication date
JP2013527629A (ja) 2013-06-27
EP2702648A1 (en) 2014-03-05
WO2012145103A1 (en) 2012-10-26
US20120269221A1 (en) 2012-10-25
US20150188290A1 (en) 2015-07-02
US9059570B1 (en) 2015-06-16
EP2702648B1 (en) 2018-05-09
EP2702648A4 (en) 2015-04-22
US8798111B2 (en) 2014-08-05

Similar Documents

Publication Publication Date Title
PL2702648T3 (pl) Międzypasmowe lasery kaskadowe z projektowanymi gęstościami nośnika
PL2643908T3 (pl) Międzypasmowe lasery kaskadowe
ZA201307876B (en) Genetically engineered microorganisms that metabolize xylose
EP2718457A4 (en) GENETICALLY MODIFIED FUSION MOLECULES LIGAND TNFSF-ANTIBODY ELEMENT
EP2703466A4 (en) COMPOUND OF A WATER REPELLENT AND AN OIL-REACTIVE AGENT, PRODUCTION METHOD AND ARTICLE THEREOF
EP2707306A4 (en) CARRIER WITH RETENTION FUNCTIONS
PL2729220T3 (pl) Związki o aktywnościach przeciwstarzeniowych
EP2747221A4 (en) QUANTUM CASCADE LASER ELEMENT
ZA201308394B (en) Laser nozzle with mobile element
EP2721435A4 (en) micro-ring resonator
GB2503164B (en) Cross enterprise communication
EP2801131A4 (en) LASERS IN THE SOLID STATE
GB2509865B (en) Absorbent article with stabilization member
EP2686355A4 (en) HIGH MELTING FLUOROPOLYMERS
EP2777314A4 (en) FEEDBACK COMMUNICATIONS
GB2496430B (en) Lock assemblies
EP2721633A4 (en) STABILIZED NANO CRYSTALS
PL2734677T3 (pl) Struktury ograniczające
GB201206961D0 (en) Material guide assembly
ZA201400681B (en) Off-gas channel
EP2787583A4 (en) METHOD OF MANUFACTURING A QUANTUM CASCADE LASER
GB201111415D0 (en) Carrier
IL229316B (en) Genetically engineered growth factor variants
SG11201401491QA (en) Resonator with reduced losses
GB201901037D0 (en) Lock assemblies