PL2394308T3 - Metody wytwarzania materiału fotowoltaicznego zdolnego do wykorzystania fotonów wysokoenergetycznych - Google Patents

Metody wytwarzania materiału fotowoltaicznego zdolnego do wykorzystania fotonów wysokoenergetycznych

Info

Publication number
PL2394308T3
PL2394308T3 PL09785847T PL09785847T PL2394308T3 PL 2394308 T3 PL2394308 T3 PL 2394308T3 PL 09785847 T PL09785847 T PL 09785847T PL 09785847 T PL09785847 T PL 09785847T PL 2394308 T3 PL2394308 T3 PL 2394308T3
Authority
PL
Poland
Prior art keywords
photones
methods
high energy
material capable
photovoltaic material
Prior art date
Application number
PL09785847T
Other languages
English (en)
Inventor
Zbigniew T. Kuznicki
Patrick Meyrueis
Original Assignee
Segton Advanced Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Segton Advanced Technology filed Critical Segton Advanced Technology
Publication of PL2394308T3 publication Critical patent/PL2394308T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
PL09785847T 2009-02-06 2009-02-06 Metody wytwarzania materiału fotowoltaicznego zdolnego do wykorzystania fotonów wysokoenergetycznych PL2394308T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/IB2009/005023 WO2010089624A1 (en) 2009-02-06 2009-02-06 Methods for producing photovoltaic material and device able to exploit high energy photons
EP09785847.6A EP2394308B1 (en) 2009-02-06 2009-02-06 Methods for producing photovoltaic material able to exploit high energy photons

Publications (1)

Publication Number Publication Date
PL2394308T3 true PL2394308T3 (pl) 2021-11-15

Family

ID=41559673

Family Applications (1)

Application Number Title Priority Date Filing Date
PL09785847T PL2394308T3 (pl) 2009-02-06 2009-02-06 Metody wytwarzania materiału fotowoltaicznego zdolnego do wykorzystania fotonów wysokoenergetycznych

Country Status (7)

Country Link
US (2) US9711674B2 (pl)
EP (1) EP2394308B1 (pl)
DK (1) DK2394308T3 (pl)
ES (1) ES2880800T3 (pl)
HU (1) HUE055785T2 (pl)
PL (1) PL2394308T3 (pl)
WO (1) WO2010089624A1 (pl)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120204941A1 (en) * 2011-02-15 2012-08-16 Cargo James T Allotropic changes in si and use in fabricating materials for solar cells
EP2689473B1 (en) 2011-03-25 2019-05-08 SEGTON Advanced Technology Photovoltaic converter with improved emitter structure based on silicon components and a method for production of the photovoltaic converter
US9255328B2 (en) * 2013-03-15 2016-02-09 Robert Bosch Gmbh Metamaterial and method for forming a metamaterial using atomic layer deposition
WO2014203081A2 (en) * 2013-05-14 2014-12-24 Segton Advanced Technology Sas Grouped nanostructured units system forming a metamaterial within the silicon and the manufacturing process to form and arrange them therein
DK2997604T3 (da) * 2013-05-14 2020-09-14 Segton Advanced Tech Sas Nanostrukturerede enheder dannet inden i et siliciummateriale og fremstillingsprocessen hvorved de skabes deri
US10020408B2 (en) 2013-07-19 2018-07-10 Segton Advanced Technology System of architecture and related built-in nanomembranes for the emitter of a light-to-electricity all-silicon converter for the giant photoconversion and the method of its manufacture
FR3009892A1 (fr) 2013-08-20 2015-02-27 Segton Adt Ensemble opto-electronique forme d'une plateforme opto-phonique de traitement de la lumiere, de convertisseurs phoniques, et d'au moins un convertisseur lumiere-electricite pour former un capteur solaire
WO2015033227A2 (en) * 2013-09-03 2015-03-12 Segton Adt Sas Entire solar spectrum multiplying converting platform unit for an optimal light-to-electricity conversion
US10103547B2 (en) 2014-02-21 2018-10-16 Solarlytics, Inc. Method and system for applying electric fields to multiple solar panels
US10069306B2 (en) 2014-02-21 2018-09-04 Solarlytics, Inc. System and method for managing the power output of a photovoltaic cell
CN105374888B (zh) * 2015-11-24 2018-01-12 新奥光伏能源有限公司 一种太阳能电池的低温银浆栅线的制备方法及电池和组件
CN108074992A (zh) * 2016-11-18 2018-05-25 清华大学 一种以碳纳米材料薄膜为异质结背场的晶体硅太阳能电池
CN106373870B (zh) * 2016-11-24 2020-06-02 清华大学 半导体结构以及制备方法
FR3067168A1 (fr) 2017-06-01 2018-12-07 Segton Advanced Technology Procede de fabrication d'un convertisseur lumiere-electricite tout en silicium pour une photoconversion geante
CN107452819A (zh) * 2017-09-28 2017-12-08 湖北工业大学 一种多层结构的铜锌锡硫薄膜太阳能电池背电极及其制备方法
CN113454795A (zh) * 2019-01-16 2021-09-28 密歇根大学董事会 用于显示器下指纹和手势传感器的具有半导体活性层的光检测器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6100575A (en) * 1987-08-19 2000-08-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device
US5935435A (en) * 1998-04-20 1999-08-10 Hasler; James J. Paint can strainer

Also Published As

Publication number Publication date
EP2394308A1 (en) 2011-12-14
WO2010089624A1 (en) 2010-08-12
DK2394308T3 (da) 2021-07-19
US20110162700A1 (en) 2011-07-07
US20170162741A1 (en) 2017-06-08
EP2394308B1 (en) 2021-05-12
HUE055785T2 (hu) 2021-12-28
US9711674B2 (en) 2017-07-18
ES2880800T3 (es) 2021-11-25

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