PL2394308T3 - Metody wytwarzania materiału fotowoltaicznego zdolnego do wykorzystania fotonów wysokoenergetycznych - Google Patents

Metody wytwarzania materiału fotowoltaicznego zdolnego do wykorzystania fotonów wysokoenergetycznych

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Publication number
PL2394308T3
PL2394308T3 PL09785847T PL09785847T PL2394308T3 PL 2394308 T3 PL2394308 T3 PL 2394308T3 PL 09785847 T PL09785847 T PL 09785847T PL 09785847 T PL09785847 T PL 09785847T PL 2394308 T3 PL2394308 T3 PL 2394308T3
Authority
PL
Poland
Prior art keywords
methods
high energy
photovoltaic material
energy photons
producing photovoltaic
Prior art date
Application number
PL09785847T
Other languages
English (en)
Inventor
Zbigniew T. Kuznicki
Patrick Meyrueis
Original Assignee
Segton Advanced Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Segton Advanced Technology filed Critical Segton Advanced Technology
Publication of PL2394308T3 publication Critical patent/PL2394308T3/pl

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
PL09785847T 2009-02-06 2009-02-06 Metody wytwarzania materiału fotowoltaicznego zdolnego do wykorzystania fotonów wysokoenergetycznych PL2394308T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09785847.6A EP2394308B1 (en) 2009-02-06 2009-02-06 Methods for producing photovoltaic material able to exploit high energy photons
PCT/IB2009/005023 WO2010089624A1 (en) 2009-02-06 2009-02-06 Methods for producing photovoltaic material and device able to exploit high energy photons

Publications (1)

Publication Number Publication Date
PL2394308T3 true PL2394308T3 (pl) 2021-11-15

Family

ID=41559673

Family Applications (1)

Application Number Title Priority Date Filing Date
PL09785847T PL2394308T3 (pl) 2009-02-06 2009-02-06 Metody wytwarzania materiału fotowoltaicznego zdolnego do wykorzystania fotonów wysokoenergetycznych

Country Status (7)

Country Link
US (2) US9711674B2 (pl)
EP (1) EP2394308B1 (pl)
DK (1) DK2394308T3 (pl)
ES (1) ES2880800T3 (pl)
HU (1) HUE055785T2 (pl)
PL (1) PL2394308T3 (pl)
WO (1) WO2010089624A1 (pl)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120204941A1 (en) * 2011-02-15 2012-08-16 Cargo James T Allotropic changes in si and use in fabricating materials for solar cells
PL2689473T3 (pl) 2011-03-25 2019-10-31 Segton Advanced Tech Przetwornik fotoelektryczny o ulepszonej strukturze emitera opartej ma komponentach krzemowych oraz sposób wytwarzania przetwornika fotoelektrycznego
US9255328B2 (en) * 2013-03-15 2016-02-09 Robert Bosch Gmbh Metamaterial and method for forming a metamaterial using atomic layer deposition
PL2997603T3 (pl) * 2013-05-14 2020-12-28 Segton Advanced Technology Sas Konglomerat komórek nanostrukturalnych, system tworzący metamateriał w krzemie oraz proces jego wytwarzania i rozlokowania w odpowiedniej przestrzeni
FR3005790A1 (fr) * 2013-05-14 2014-11-21 Segton Advanced Technology Elements nanostructures formes a l'interieur d'un materiau silicium et procede de fabrication pour les realiser
DK3022776T3 (da) 2013-07-19 2020-09-14 Segton Adt Sas Arkitektonisk system og beslægtede indbyggede nanomembraner til udleder af en lys-til-elektricitet konverteringsenhed helt i silikone til gigantisk fotokonvertering og fremstillingsmetode af samme
FR3009892A1 (fr) 2013-08-20 2015-02-27 Segton Adt Ensemble opto-electronique forme d'une plateforme opto-phonique de traitement de la lumiere, de convertisseurs phoniques, et d'au moins un convertisseur lumiere-electricite pour former un capteur solaire
PL3042399T3 (pl) 2013-09-03 2021-12-27 Segton Adt Sas Jednostka konwertująca optymalnie na elektryczność światło całego spektrum słonecznego
US10069306B2 (en) 2014-02-21 2018-09-04 Solarlytics, Inc. System and method for managing the power output of a photovoltaic cell
US10103547B2 (en) 2014-02-21 2018-10-16 Solarlytics, Inc. Method and system for applying electric fields to multiple solar panels
CN105374888B (zh) * 2015-11-24 2018-01-12 新奥光伏能源有限公司 一种太阳能电池的低温银浆栅线的制备方法及电池和组件
CN108074992A (zh) * 2016-11-18 2018-05-25 清华大学 一种以碳纳米材料薄膜为异质结背场的晶体硅太阳能电池
CN106373870B (zh) * 2016-11-24 2020-06-02 清华大学 半导体结构以及制备方法
FR3067168A1 (fr) 2017-06-01 2018-12-07 Segton Advanced Technology Procede de fabrication d'un convertisseur lumiere-electricite tout en silicium pour une photoconversion geante
CN107452819A (zh) * 2017-09-28 2017-12-08 湖北工业大学 一种多层结构的铜锌锡硫薄膜太阳能电池背电极及其制备方法
WO2020149842A1 (en) * 2019-01-16 2020-07-23 The Regents Of The University Of Michigan Photodetectors with semiconductor active layers for under-display fingerprint and gesture sensors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6100575A (en) * 1987-08-19 2000-08-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device
US5935435A (en) * 1998-04-20 1999-08-10 Hasler; James J. Paint can strainer

Also Published As

Publication number Publication date
EP2394308A1 (en) 2011-12-14
US20170162741A1 (en) 2017-06-08
EP2394308B1 (en) 2021-05-12
DK2394308T3 (da) 2021-07-19
HUE055785T2 (hu) 2021-12-28
ES2880800T3 (es) 2021-11-25
US20110162700A1 (en) 2011-07-07
US9711674B2 (en) 2017-07-18
WO2010089624A1 (en) 2010-08-12

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