PL2383773T3 - Sposób elektrochemiczno-mechanicznego polerowania płytek z węglika krzemu - Google Patents

Sposób elektrochemiczno-mechanicznego polerowania płytek z węglika krzemu

Info

Publication number
PL2383773T3
PL2383773T3 PL11163617T PL11163617T PL2383773T3 PL 2383773 T3 PL2383773 T3 PL 2383773T3 PL 11163617 T PL11163617 T PL 11163617T PL 11163617 T PL11163617 T PL 11163617T PL 2383773 T3 PL2383773 T3 PL 2383773T3
Authority
PL
Poland
Prior art keywords
electrochemical
mechanical polishing
silicon carbon
tiles
carbon tiles
Prior art date
Application number
PL11163617T
Other languages
English (en)
Inventor
Halina Sakowska
Maciej Gala
Władysław Hofman
Original Assignee
Instytut Tech Materialow Elektronicznych
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Instytut Tech Materialow Elektronicznych filed Critical Instytut Tech Materialow Elektronicznych
Publication of PL2383773T3 publication Critical patent/PL2383773T3/pl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12Preparing bulk and homogeneous wafers
    • H10P90/129Preparing bulk and homogeneous wafers by polishing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/046Lapping machines or devices; Accessories designed for working plane surfaces using electric current
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/16Polishing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
PL11163617T 2010-04-27 2011-04-23 Sposób elektrochemiczno-mechanicznego polerowania płytek z węglika krzemu PL2383773T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PL39107610 2010-04-27
EP11163617.1A EP2383773B1 (en) 2010-04-27 2011-04-23 Method of electrochemical-mechanical polishing of silicon carbide wafers

Publications (1)

Publication Number Publication Date
PL2383773T3 true PL2383773T3 (pl) 2013-09-30

Family

ID=44485970

Family Applications (1)

Application Number Title Priority Date Filing Date
PL11163617T PL2383773T3 (pl) 2010-04-27 2011-04-23 Sposób elektrochemiczno-mechanicznego polerowania płytek z węglika krzemu

Country Status (2)

Country Link
EP (1) EP2383773B1 (pl)
PL (1) PL2383773T3 (pl)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10879077B2 (en) * 2017-10-30 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Planarization apparatus and planarization method thereof
CN116657231B (zh) * 2023-05-26 2025-08-26 无锡市恒利弘实业有限公司 一种碳化硅基材抛光方法
CN120206314B (zh) * 2025-05-09 2025-09-05 河北同光半导体股份有限公司 一种大尺寸碳化硅衬底的化学机械抛光方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
JP3891133B2 (ja) 2003-03-26 2007-03-14 セイコーエプソン株式会社 電子部品の製造方法および電子部品の実装方法
WO2005099388A2 (en) 2004-04-08 2005-10-27 Ii-Vi Incorporated Chemical-mechanical polishing of sic surfaces using hydrogen peroixde or ozonated water solutions in combination with colloidal abrasive

Also Published As

Publication number Publication date
EP2383773B1 (en) 2013-05-08
EP2383773A3 (en) 2012-05-30
EP2383773A2 (en) 2011-11-02

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