PL115292B2 - Method for obtaining sbsj,particularly for microelectronics - Google Patents
Method for obtaining sbsj,particularly for microelectronics Download PDFInfo
- Publication number
- PL115292B2 PL115292B2 PL21234678A PL21234678A PL115292B2 PL 115292 B2 PL115292 B2 PL 115292B2 PL 21234678 A PL21234678 A PL 21234678A PL 21234678 A PL21234678 A PL 21234678A PL 115292 B2 PL115292 B2 PL 115292B2
- Authority
- PL
- Poland
- Prior art keywords
- sbsj
- obtaining
- microelectronics
- single crystals
- temperature
- Prior art date
Links
- 238000000034 method Methods 0.000 title description 6
- 238000004377 microelectronic Methods 0.000 title description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003708 ampul Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000012258 culturing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- KNXVOGGZOFOROK-UHFFFAOYSA-N trimagnesium;dioxido(oxo)silane;hydroxy-oxido-oxosilane Chemical compound [Mg+2].[Mg+2].[Mg+2].O[Si]([O-])=O.O[Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O KNXVOGGZOFOROK-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
Przedmiotem wynalazku jest sposób otrzymywania SbSJ zwlaszcza dla mikroelektroniki.
SbSJjest dobrym materialem do zastosowan akustoelektronicznych o duzym wspólczynniku sprzezenia elektromechanicznego k = 0,7-0,8 w ferrofazie oraz do zastosowan optoelektronicznych ze wzgledu na przezroczystosc w podczerwieni. Dotychczas stosowano sposoby hodowli monokrysztalów SbSJ metodami hydrotermalna, Bridgmanna i resublimacji z fazy gazowej, uzyskujac nieprzydatne w zastosowaniach iglowe monokrysztalki o poprzecznych wymiarach nie przekraczajacych 2,6 mm.
Sposób wytwarzania SbSJ wedlug wynalazku polega na tym, ze monokrysztaly SbSJ stapia sie po uprzednim rozdrobnieniu, a nastepnie poddaje szybkiemu przechlodzeniu do temperatur azotowych lub helowych. Uzyskiwany ta droga material charakteryzuje sie duza czystoscia i odpornoscia mechaniczna, mozna go latwo obrabiac i wykonywac z niego ksztaltki nadajace sie do zastosowan praktycznych.
Przyklad. W odpompowanych ampulach termisilowych pod cisnieniem 10"2Tr argonu zatapiano stechiometeryczna mieszanine SW3 i Sb^. Ampuly wygrzewano przez 24 godziny w piecu w temperaturze (480 ± 3)°C, a nastepnie wolno chlodzono do temperatury pokojowej. Uzyskany wten sposób SbSJ ucierano w mozdzierzu agalitowym i nastepnie plukano w alkoholu metylowym. Wyplukany i osuszony SbSJ umieszczono w szczelnie zamknietych ampulach termisilowych i topiono przez ogrzewanie do temperatury 420°C (temperature mierzono termopara NiCr z dokladnoscia ± 3°C) stopiony SbSJ przelewano nastepnie do cieklego azotu poddajac go gwaltownemu przechlodzeniu o 600°C w ciagu 1-2 sek.
Zastrzezen a patentowe Sposób otrzymywania SbSJ zwlaszcza dla mikroelektroniki droga homogenizowania w zamknietej ampule stechiometerycznej mieszaniny SbJ3 i Sb^, znamienny tym, ze monokrysztaly SbSJ stapia sie po utftttónim rozdrobnieniu, a nastepnie poddaje szybkiemu przechlodzeniu do temperatur azotowych lub kilowych.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL21234678A PL115292B2 (en) | 1978-12-28 | 1978-12-28 | Method for obtaining sbsj,particularly for microelectronics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PL21234678A PL115292B2 (en) | 1978-12-28 | 1978-12-28 | Method for obtaining sbsj,particularly for microelectronics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| PL212346A1 PL212346A1 (pl) | 1979-12-17 |
| PL115292B2 true PL115292B2 (en) | 1981-03-31 |
Family
ID=19993676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL21234678A PL115292B2 (en) | 1978-12-28 | 1978-12-28 | Method for obtaining sbsj,particularly for microelectronics |
Country Status (1)
| Country | Link |
|---|---|
| PL (1) | PL115292B2 (pl) |
-
1978
- 1978-12-28 PL PL21234678A patent/PL115292B2/pl unknown
Also Published As
| Publication number | Publication date |
|---|---|
| PL212346A1 (pl) | 1979-12-17 |
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