NZ740947B2 - Microstructure patterns - Google Patents

Abstract

one aspect, there is provided a method of creating a microstructure pattern on an exterior surface of an aircraft, boat, automobile or other vehicle is disclosed. A layer of photopolymer (44) is applied to the top coat or substrate (43) by nozzles (45). The photopolymer is selectively irradiated to activate its photoinitiator and the unirradiated polymer is removed. The irradiation can be via a mask (49) which does not come into contact with the polymer, or via a beam splitting arrangement (63, 64) or a diffraction grating (71). The pattern can be formed by either leaving the exposed photopolymer in situ, or using the exposed photopolymer to mask the substrate, etching the substrate, and then removing the exposed photopolymer. In another aspect, there is provided a method 1100 comprising the step 1102 of applying a layer of photocurable material to the exterior surface, the step 1104 of irradiating the photocurable material with radiation including a predetermined irradiation intensity profile, and the step 1106 of removing uncured photocurable material to form the microstructure pattern. The radiation initiates curing of the irradiated photocurable material, causing a curing depth profile across the layer of the photocurable material corresponding to the selected intensity profile. The invention aims to provide improved control over photo-curing processes. to activate its photoinitiator and the unirradiated polymer is removed. The irradiation can be via a mask (49) which does not come into contact with the polymer, or via a beam splitting arrangement (63, 64) or a diffraction grating (71). The pattern can be formed by either leaving the exposed photopolymer in situ, or using the exposed photopolymer to mask the substrate, etching the substrate, and then removing the exposed photopolymer. In another aspect, there is provided a method 1100 comprising the step 1102 of applying a layer of photocurable material to the exterior surface, the step 1104 of irradiating the photocurable material with radiation including a predetermined irradiation intensity profile, and the step 1106 of removing uncured photocurable material to form the microstructure pattern. The radiation initiates curing of the irradiated photocurable material, causing a curing depth profile across the layer of the photocurable material corresponding to the selected intensity profile. The invention aims to provide improved control over photo-curing processes.

Description

MICROSTRUCTURE PATTERNS Field of the Invention The present disclosure relates to a method and a system for patterning a microstructure on a surface. More particularly, the present disclosure relates to patterning a tructure on an exterior surface. In one arrangement, the present invention provides a microstructure pattern on a top coat on an exterior surface of a vehicle.

Background The fuel consumption by modern aircraft depends icantly upon the drag experienced by the ft. Similar considerations apply in relation to boats and automobiles. It has been known for some time that the drag of an aerodynamic surface can be reduced by creating a microstructure pattern on the surface.

Reference to any prior art in the specification is not, and should not be taken as, an acknowledgment or any form of suggestion that this prior art forms part of the common general knowledge in any jurisdiction or that this prior art could reasonably be expected to be tood, regarded as relevant and/or combined with other pieces of prior art by a person skilled in the art.

Summary In accordance with a first aspect of the present disclosure there is disclosed a method of ing a microstructure pattern on an exterior surface of a e, said method comprising the steps of: applying a layer of photocurable material to said exterior surface, said urable material including a photoinitiator; selectively irradiating said photocurable material to activate said nitiator in only those regions of the urable material layer irradiated; and removing either the un-irradiated photocurable material or the irradiated photocurable material, wherein both the applying and ating steps do not involve a mask coming into contact with said photocurable material layer. 1003358336 Preferably the photocurable material is a photopolymer.

In accordance with a first aspect of the present ion there is disclosed a method of providing a microstructure pattern on an exterior surface, the method comprising the steps of: applying a layer of photocurable material to the exterior surface, the applied layer of photocurable al having a first side proximal to the exterior surface and an opposed, second side distal from the exterior surface; irradiating onto the second side of the applied layer of the photocurable material with ion to initiate curing of the irradiated urable material from the first side towards the second side; and removing uncured urable material to form the microstructure pattern wherein: the initiated curing causes a curing height profile across the layer of the photocurable material corresponding to a predetermined intensity profile of the radiation.

In accordance with a second aspect of the t invention there is disclosed a method, comprising: initiating a process of irradiating at least a portion of a layer of photocurable material on a substrate with light for curing the photocurable material to initiate curing of the photocurable material proximate the substrate, wherein the light comprises an intensity e with variations along at least a first dimension; and ceasing the process of irradiating of the layer of photocurable material, to form cured photocurable al within the layer of photocurable material in a microstructure pattern, the cured photocurable material having a variable curing height profile relative to the substrate, including a variable curing height profile across microstructures in the microstructure pattern.

In ance with further s of the present disclosure, corresponding systems for providing a microstructure pattern on an exterior surface are also disclosed. 1003358336 Brief Description of the Drawings Arrangements of the disclosure will now be described, by way of example only, with reference to the accompanying drawings in which: Fig. 1 is a schematic representation of a photopolymer before and after irradiation; Fig. 2 is a tic perspective view of a prior art rolling photolithography apparatus used in a continuous process to manufacture a tructure n and in which a mask is in contact with the photopolymer; Fig. 3 is a erse cross-sectional view through the cylinder of the apparatus of Fig. 2; Fig. 4 is a schematic side elevation of a second prior art technique which may be termed the Fraunhofer technique and in which a web tructure former or mould comes in contact with the photopolymer; Fig. 5 is an enlarged view showing some details of the arrangement of Fig. 4; Fig. 6 is a schematic cross-sectional view of a roller apparatus in accordance of an arrangement of the present disclosure in which a mask comes into close proximity to , but not contact with, the photopolymer; Fig. 7 is an enlargement of a portion of Fig. 6 showing in detail the components thereof; Fig. 8 is a view similar to Fig. 6 but illustrating an alternative arrangement in which a predetermined intensity profile is provided by means of interference of two beams generated by a beam splitter; Fig. 9 is an enlarged view of the central portion of the apparatus of Fig. 8; and Fig. 10 is a schematic illustration of a ction grating illustrating the interference pattern created using such a grating; Fig. 11A is a flow chart of an example of a method of providing a microstructure pattern on an exterior surface; Fig. 11B illustrates side views of outputs of steps of the described method illustrated in Fig. 11A; Fig. 11C illustrates top views of s of steps of the described method illustrated in Fig. 11A; Fig. 12 illustrates an arrangement of a system for carrying out a step of the method illustrated in Fig. 11A; Figs. 13A to 13C illustrate ots of irradiation of a layer of photocurable material by the system illustrated in Fig. 12.

Fig. 14A illustrates another arrangement of a system for ng out the method illustrated in Fig. 11A; Figs. 14B illustrates a snapshot of irradiation of a layer of photocurable material by the system illustrated in Fig. 14A; Figs. 14C illustrates yet another arrangement of a system for carrying out the method illustrated in Fig. 11A; Figs. 15A—15E illustrate examples of tructure patterns ed by the present sure; and Figs. 16A and 16B illustrate examples of post—processing steps applicable to the method of the present disclosure.

Detailed ption The present disclosure relates to a technique in ing a microstructure pattern on an exterior surface, such as on the top coat of a vehicle, such as an ft, a boat and an automobile, which travels through a fluid such as air or water.

Photocurable materials such as photopolymers are well known from photolithographic ques developed for computer microchip fabrication and, as illustrated schematically in Fig. l, the photopolymer 1 consists of a mixture of smaller molecules (monomers 2 and oligomers 3) and a photoinitiator 4.

After exposure to ultraviolet light 6, or radiation, normally via a mask, the photoinitiator catalyses a polymerization reaction between the monomers 2 and the oligomers 3 causing them to cross—link up into larger network polymer molecules and thereby form the cured r. These network polymers change their chemical and structural properties. So—called “negative photopolymers” become insoluble and stronger than the unexposed photopolymer. However, so—called “positive photopolymers” become soluble and thus weaker than the unexposed photopolymer.

Microstructures can thus be made by applying a thin layer of photopolymer to a substrate and exposing it to UV light or radiation through a photomask. Either the unexposed ve photopolymer is removed by use of a developer liquid which washes away the unexposed photopolymer, y leaving the exposed photopolymer in the desired pattern, or the exposed positive photopolymer is removed.

A liquid etchant can then be applied which attacks the substrate but not the remaining photopolymer. Consequently, when the remaining photopolymer is removed, the d microstructure is created etched into the substrate. Other etching s such as by means of a , are also able to be used.

Photolithography techniques This general photolithography technique has been used in g mask photolithography in a continuous process as schematically illustrated in Figs. 2 and 3.

Here liquid photopolymer is applied via nozzles 10 to a substrate ll. A cylindrical rolling mask 12 is rolled over the photopolymer and contains an internal coaxial source 13 of UV ion. ream of the rolling mask 12 are nozzles 15 for the developer and nozzles 16 for the rinse.

As seen in Fig. 3, UV radiation from the source 13 passes through the mask 12 which is in contact with the photopolymer on the substrate 11 thereby forming the abovementioned photo polymerization on. The polymer coated substrate 11 then passes under the nozzles 15 and 16 to respectively remove the unexposed photopolymer from those portions of the substrate not covered by an exposed photopolymer and rinse the substrate 11.

An alternative process is rated in Figs. 4 and 5. In this Fraunhofer method the microstructure is formed out of the photopolymer and left on the aircraft surface rather than being etched into the aircraft surface, or substrate, as is the case in the prior art arrangement of Figs. 2 and 3. In the arrangement of Figs. 4 and 5, a UV transparent web 22 has a negative of the desired microstructure formed on its outside e. The web 22 is preferably formed from silicone film and is arent to UV ion d from a UV lamp 21. The web 22 passes over a pair of flexible s 23 and a guide roller 25. A dosing unit 24 takes the form of a tank 30 and a pipe 31 which permits a liquid coating 26 to be applied to the web and formed from the liquid contained in the tank 30. The liquid coating 26 is then applied to the upper surface of the ate 27 by the rolling motion of the web 22 over the rollers 3, 5.

As indicated in Fig. 5, the web 22 has a negative of the desired pattern and thus forms the photopolymer 32 on the substrate 27 into that desired pattern. The UV radiation 33 from the UV lamp 21 passes through the web 22 and sets the photopolymer 32 into the desired pattern formed by the cured photopolymer 28. Thus, as the apparatus moves relative to the substrate 27 in the direction ted by arrow 29, so the cured photopolymer 28 in the desired pattern is formed on the substrate 27.

In this method the rolling mask matrix material requires a very low surface energy and a Shore hardness within a specific narrow range. In addition, the liquid coating 26 must adhere to the substrate 27 after exposure yet not run or otherwise change shape after the web 22 is removed. Furthermore, the web 22 is expensive to produce and degrades through the g contact process.

Mask—based arrangement Turning now to Figs. 6 and 7, an arrangement of the present disclosure is described.

The apparatus takes the form of a hood or shroud 41 which covers the apparatus and protects it from ambient UV light. Within the shroud are a pair of rollers 42 which permit the apparatus to move over a ate 43.

In an arrangement generally similar to that of Fig. 2, an array of nozzles 45 apply polymer to the ate 43, a further array of s 46 applies liquid developer and a still r array of nozzles 47 applies a liquid rinse. Between the nozzles 45 and 46 is a rolling cylindrical mask 49 which contains a UV light source 50. In an alternative arrangement, the mask may be substantially planar and is translated above and along said exterior surface. A skilled person would appreciate that description hereinafter of a cylindrical mask, with minor modifications, may be applicable to a substantially planar mask.

As best seen in Fig. 7, the mask 49 does not come into contact with the photopolymer 44 but is instead spaced therefrom by a small gap 5 lof approximately 10 — lOO centimetres.

As schematically illustrated in Fig. 6, those ns of the photopolymer 44 which are exposed to the UV radiation from source 50 remain adhered to the substrate 43 after passing under the developer nozzles 46 and rinse nozzles 47. The present arrangement, which es proximity ng techniques of computer microchip photolithography, can achieve a resolution down to 1—2 microns which is more than sufficient for microstructures which reduce aerodynamic, such as skin friction drag.

The bed arrangement allows for different photopolymer/developer combinations t the strict requirements for mask contact printing as described above in relation to Figs. 4 and 5. In addition, different cylindrical masks 49 can be easily tuted to allow different microstructure arrangements to be applied, for example, to different areas of the exterior of a single aircraft.

It is also possible to use the ement of Figs. 6 and 7 so as to form the microstructure by etching the substrate 43. This can be done by using additional etching nozzles, or by ing an entire panel in the etching liquid.

Maskless arrangement In accordance with a further arrangement of the present disclosure, as illustrated in Figs. 8 and 9, a maskless system can be created by use of interference lithography.

Interference lithography allows for continuous patterning of regular arrays by setting up an interference pattern between two coherent light, or ion, s. The minimum spacing between features is equal to approximately half the wavelength which ponds to a minimum spacing of approximately 0.2 microns for UV radiation. As indicated in Fig. 8, the apparatus of Fig. 6 is modified by the removal of the cylindrical mask 49 and light source 50 and the provision instead of a UV laser 61, a spatial filter 62, a beam splitter 63 and a pair of mirrors 64. In this arrangement, the wavelength for the UV laser is 364 nanometers. The mirrors 64 are moveable relative to the substrate 43 so as to increase or decrease the angle 6. This adjusts the spacing between the pattern lines generated by the interference arrangement.

As before, the present ement can be used to form etched patterns into the substrate 24 by the provision of additional etching nozzles.

Turning now to Fig. 10, the arrangement of Figs. 8 and 9 can be further modified so that instead of using beam splitting techniques, a diffraction grating 71 (e. g. in the form of a phase mask) is ed instead. The diffraction g 71 is mly illuminated from a UV source (not illustrated in Fig. 10) so as to thereby again form an erence pattern on the substrate 43. Under this arrangement the spacing pattern is not tunable but is instead determined by the construction of the diffraction grating.

Single—exposure arrangement Some existing photolithographic arrangements require le—exposure to create a ble microstructure pattern layer by layer (e.g. by multiple—exposure) across a surface. Described herein is a method and system for providing a microstructure pattern on an exterior surface that provides a microstructure pattern with a selected spatial e without the need for multiple—exposure.

As illustrated in Fig. 11A, the described method 1100 ses the step 1102 of applying a layer of photocurable material to the exterior surface, the step 1104 of irradiating the photocurable material with radiation including a predetermined ation intensity profile, and the step 1106 of removing uncured photocurable material to form the microstructure pattern. The radiation initiates curing of the irradiated photocurable material, causing a curing depth profile across the layer of the photocurable al corresponding to the selected intensity profile. The correspondence may include a linear or a non—linear relationship between the selected intensity profile and the curing depth profile. The removing step 1106 of may occur after completion of the curing.

Figs. 11B and 11C illustrate schematically a side view 1150 and a top view 1160, respectively, of an example of the intermediate or final output after each of steps 1102, 1104 and 1106 of the described method 1100. In this example, the layer of photocurable material is a UV—curable or near—UV—curable coating 1152, which upon curing adheres to the exterior surface. The coating 1152 may be ed for specific use, such as up to military ications including the MIL—PRF—85285 specifications. In another instance, the coating 1152 is primer—surfacer Cromax 31308. In this example, the exterior surface is a substrate 1154, such as the top coat of a e. In the example illustrated in Figs. 11B and 11C, the predetermined irradiation intensity profile is a sawtooth irradiation intensity profile 1156. In this example, where the intensity—to—curing—depth correspondence is a linear relationship, the resulting microstructure pattern includes a th riblet geometry 1160. In another example, where the ity—to—curing—depth correspondence is a non—linear onship, the resulting microstructure pattern includes a ped riblet geometry.

Microstructure patterning systems Fig. 12 illustrates an arrangement of a microstructure patterning system 1200 configured to carry out the irradiating step 1104 in the described method 1100. In this arrangement, the step 1102 of applying the coating 1152 to the substrate 1154 (which WO 63040 has already taken place) and the step 1106 of removing the uncured photocurable material (which has not yet taken place) are carried out separately and not by the system 1200.

The system 1200 includes a radiation source 1202. The radiation source 1202 may be a near—UV light source. In one e, the near—UV light source is a 405 nm laser diode with power output of up to 50mW. The laser diode behaves as a point—like source producing in phase incident light. This wavelength allows photomasks to be made from glass rather than quartz, which would otherwise be necessary for UV ngths. In another , other wavelengths may be used. The system 1200 includes a radiation modifier 1203 to modify the radiation to produce desirable irradiation to the layer of photocurable material. In one arrangement, the radiation modifier 1203 includes an ude mask 1204 and/or phase mask 1206. To achieve a predetermined irradiation intensity profile, the radiation is passed through an amplitude mask and/or a phase mask associated with the predetermined irradiation intensity profile. In case of an amplitude mask 1204, it may be a gray—scale mask, having different transparency or ation based on on on the mask. In case of a phase mask 1206, it may be in a form of a one—dimensional diffraction grating providing an interference pattern 1209 upon illumination. The predetermined irradiation intensity profile in the ce of bottom—up curing (see more description below) allows creation of a microstructure n without the need for le— exposure.

In this arrangement, the irradiation intensity profile has variations along a first ion 1211, causing a curing depth profile with variations also along the first dimension 1211. The radiation modifier 1203 may include a shutter 1208 to limit the exposed area of the layer of the photocurable material 1152 along the first dimension 1211. The radiation modifier 1203 may also e a photoresist mask 1214 to limit the exposure along a second dimension 1212, substantially orthogonal to the first dimension 1211. The radiation source 1202 and/or the radiation modifier 1203 are supported by a support rig 1210. The support rig 1210 is configured to displace, such as raising and lowering, the supported components to change the distance from the radiation modifier 1203 to the layer of the photocurable material 1152. The support rig 1210 is also ured to displace, such as translating along the second ion 1212, the radiation source 1202 and the ion modifier 1203 to irradiate a different part of the layer of photocurable material 1152. The cement of the radiation modifier 1203 allows exposure of an area of the layer of photocurable material 1152 larger than the aperture of the radiation modifier 1203.

Figs. 13A to 13C illustrate snapshots of irradiation of a layer of photocurable material 1152 by the system 1200 with displacement. For example, as illustrated in Fig. 13A, where the photoresist mask 1214 and/or the shutter 1208 limit the radiation exposure to a substantially linear dimension, the radiation source 1202 and the radiation modifier 1203 are translated in a continuous motion along the second dimension 1212 to achieve exposure area larger than the aperture of the ion modifier 1203. As another example, as illustrated in Fig. 13B, where the photoresist mask 1214 and/or the r 1208 allow more ion exposure along the second dimension 1212, the radiation source 1202 and the radiator modifier 1203 are translated in a shuttered manner (i.e. translate—expose—shutter in repeated cycles) along the second dimension 1212 to achieve exposure area larger than the aperture of the radiation er 1203.

In either example, the periodicity in the curing depth profile along the first dimension 1211, with or without the support rig translation along the second dimension 1212, results in the formation of one or more of the ing microstructure patterns: a th riblet geometry (Fig. 15A), a scalloped riblet ry (Fig. 15B) and a blade riblet geometry (Fig. 15C). Where the exterior surface is part of a vehicle’s exterior surface, these geometries are known to reduce the parasitic drag, such as skin friction drag, experienced by the vehicle as the vehicle moves relative to a fluid, such as air or water. In essence, the microstructure patterns of Figs. 15A to 15C have the effect of delaying or reducing separation of a fluid boundary layer adjacent the exterior patterned surface. The relatively delayed or reduced separation of the fluid boundary layer results in reduced skin friction drag. Advantageously, by reducing parasitic drag, the vehicle may, for example, ence increased fuel efficiency. A person skilled in the art will appreciate that a number of different non—illustrated tructure patterns may have the same effects as those shown in Figs. 15A to 15C. 2016/050960 Fig. 14A rates another arrangement of a microstructure patterning system 1400.

Unlike the system 1200, the system 1400 is ured to undertake all of steps 1102, 1104 and 1106. The system 1400 includes a photocurable coating ator 1402 for applying a photocurable coating, an irradiator 1404 for irradiating the photocurable material with radiation 1403 including a predetermined irradiation intensity e, and a remover 1406 for removing uncured photocurable material to form the microstructure pattern. The irradiator 1404 may include a radiation source 1202 and a radiation modifier 1203. The remover 1406 includes a develop applicator 1406a for applying a developer 1407a to facilitate separation of the uncured photocurable material from the cured photocurable material. The remover 1406 also es a rinse applicator 1406b for applying a rinsing agent 1407b to rinse off the uncured photocurable material. The choice of the per 1407a depends on the photocurable material used. For instance, the developer can be a mineral alcohol for able coatings. In some arrangement, physical removal with compressed air may be possible for some photocurable materials.

In this arrangement, the system 1400 includes an enclosure 1408 to enclose the photocurable coating applicator 1402, irradiator 1404 and the remover 1406 positioned in this order. Further, the system 1400 includes two , a front wheel 1410a and a rear wheel 1410b, to roll on the substrate 1154 (with or t the photocurable material 1152). In use, the system 1400 can be rolled in the direction from the rear wheel 1410b to the front wheel 1410a. The front wheel 1410a is placed near the photocurable coating applicator 1402, which carries out the first step (step 1102) of the described method 1100, whereas the rear wheel 1410b is placed near the remover 1406, which carries out the last step (step 1106) of the described method 1100.

Fig. 14B rates a snapshot in ng out the method 1100 by the system 1400 when rolled on an aircraft surface 1412. The photocurable coating applicator 1402 applies a photocurable coating 1414 to the aircraft surface 1412. Similar to the illustration in Fig. 12A, the photoresist mask 1214 and/or the shutter 1208 in the irradiator 1404 limit the radiation exposure to a substantially linear dimension with an interference pattern 1209. As the system 1400 is rolled along the dimension 1212, the photocurable material upon irradiation s cured photocurable material 1416 over time and ts a curing depth profile. The remover 1407 then develops and rinses to remove uncured urable material 1417 to form a microstructure pattern 1418.

Fig. 14C illustrates a similar ement of a microstructure pattern system 1450 to the system 1400 but without any wheels. In this arrangement, to achieve an exposure area larger than the aperture of the radiation modifier, the system 1450 includes a robotic arm 1452 which supports the enclosure 1408 of the system 1400 (less the wheels 1410a and 1410b) and moves in a shuttered (i.e. translate—expose—shutter) or a continuous manner.

In the arrangement of Fig. 12, the radiation modifier 1203 does not provide any variations in the irradiation intensity profile in the second dimension 1212. This permits a periodic curing depth profile with periodicity (and hence periodic patterning of microstructures) in the first dimension 1211 across the layer of irradiated photocurable material, as well as a ntially non—periodic profile in the second ion 1212. For example, the support rig 1210 may be configured to translate the radiation source 1202 and the radiator modifier 1203, relative to the substrate 1154 at a constant speed, along the second dimension 1212 to provide a substantially constant curing depth profile in the second dimension 1212. In r arrangement, the translation speed may be controlled in a variable fashion to provide a non—constant curing depth profile in the second dimension 1212, with the varying translation speed corresponding to the non—constant profile in the second dimension 1212. Lower translation speeds generally pond to larger curing depths and vice versa. For example, a ation speed in a sawtooth fashion may yield an e th curing depth profile in the second dimension 1212. In yet another arrangement, the translation speed may be constant but the overall intensity (with or without the intensity e) may be controlled in a variable fashion to provide a non—constant curing depth profile in the second dimension 1212, with the varying overall intensity corresponding to the non—constant profile in the second dimension 1212. Lower overall intensities generally pond to small curing depths and vice versa. For example, an overall intensity varied in a sawtooth fashion may yield a sawtooth curing depth profile in the second dimension 1212. As a skilled person would appreciate that sawtooth or inverse sawtooth profiles are rative only, the non— nt curing depth e can result in a variety of non—constant microstructure pattern a having variation along the second dimension. In one example, the height variation can st in a tapered riblet geometry, where each riblet includes a sawtooth profile in one dimension and a ramp—up portion, plateau portion and a ramp— down portion in the orthogonal dimension. Other examples can be found in, for instance, US patent no. 6,345,791.

In an alternative arrangement, the radiation modifier 1203 may include another one— dimensional amplitude or phase mask (not shown) or may replace the one— dimensional amplitude or phase mask with a two—dimensional amplitude or phase mask, to provide variations in the irradiation intensity profile along the second dimension 1212, causing a curing depth profile with variations also along the second dimension 1212. In this arrangement, the radiation source 1202 and the radiator er 1203 are translated in a red manner, as illustrated in Fig. 13C, to achieve an exposure area larger than the aperture of the radiation modifier 1203. The periodicity in the curing depth profile along the first dimension 1211 and the second dimension 1212, with or t the support rig translation along the second dimension 1212, results in the formation of one or more of the following microstructure patterns: a lotus leaf geometry (Fig. 15D) and a superomniphobic geometry (Fig. 15E). Some of these geometries have a leaning property to reduce the cleaning or maintenance requirements of, for example, an aircraft.

In the geometries shown in Figs. 15A to 15E, the feature size of such geometries can be down to approximately 10 s and heights up to imately 100 microns.

Bottom—up curing In one arrangement, the curing includes —up curing. With reference to the example illustrated in Figs. 11B and 11C, bottom—up curing refers to a curing process which begins at a first side of the layer of the photocurable material proximal to the exterior surface (i.e. the bottom side 1162), and continues towards an opposed, second side distal from the exterior surface (i.e. the top side 1164). In the absence of bottom— up , the curing may be instantaneous or near instantaneous upon irradiation.

Conversely, bottom—up curing allows curing to spatially progress over time from the bottom side 1162 to the top side 1164. The bottom—up curing continues to progress until any one of the following occurs: the uncured photocurable material is removed, the layer of the photocurable material is fully cured, or the curing is inhibited from progressing any further (see further ption below). The maximum height of the microstructure pattern can therefore be controlled by one or more of following: the thickness of the layer of the photocurable material, the timing of removing step 1106, and the extent of inhibited curing.

The bottom—up curing gives rise to areas of control to facilitate control of the curing depth e and hence provision of the microstructure pattern. For example, lling the irradiation intensity and/or duration affects the ultimate curing depth profile and the subsequent tructure n. In the e illustrated in Figs. 11B and 11C, the pondence n the irradiation intensity profile and the curing depth profile is matched or substantially matched. Specifically, the curing depth e is a sawtooth curing depth profile 1158 corresponding to the sawtooth irradiation intensity profile 1156. The sawtooth curing depth profile 1158 is achieved by undertaking the step 1106 of removing the uncured photocurable material. In another example, the correspondence may not be d or substantially matched.

For instance, where the photocurable material is irradiated with the sawtooth irradiation intensity profile 1156, and is continued to be bottom—up cured after the tips of the saw tooth reaching the full height of the photocurable material layer, the resulting curing depth e may correspond to a trapezoidal profile.

Bottom—up curing may be achieved in one of several ways. In one arrangement, the bottom—up curing relies on the presence of oxygen in the atmosphere to facilitate the bottom—up curing. In particular, at least some part of the photocurable material undergoes inhibited curing supressed by oxygen diffused into the photocurable material. The diffused oxygen inhibits risation of photoinitiators in the photocurable material. Under atmospheric conditions, atmospheric oxygen diffuses more into an upper portion (i.e. distal from the exterior surface) of the layer of photocurable material and less into a lower portion (i.e. al to the exterior surface) of the layer of photocurable material. In this example, the exterior surface may be that of an aircraft, and the atmospheric oxygen may be ed while the aircraft is held in a hangar. The diffused oxygen and the consequent inhibited curing causes ential curing rates within the layer of the photocurable material. The differential curing rates include a higher curing rate towards the first side and a lower curing rate near the second side. Where the g is relatively thick, the oxygen inhibition may only be measurable or effective to a old depth, below which the photocurable material is d to cure with no or little oxygen inhibition. Below the threshold depth, curing becomes more ult because of attenuation of the light/radiation as it penetrates. This attenuation can be caused by absorption into the polymer itself and/or absorption by pigmentation in the coating.

In r arrangement, as a skilled person would appreciate, the exterior e may be placed in a controlled environment having oxygen pressurised at a predetermined level to control the level of oxygen diffusion and hence controlling the inhibited curing. In yet another arrangement, as a skilled person would iate, the exterior surface may be placed in a controlled environment having reduced oxygen level to reduce bottom—up curing or the range over which oxygen penetrates below the coating the surface.

Post—processing The described method 1100 may further include post—processing steps. Subsequent to formation of the microstructure pattern in step 1106, the method 1100 may include subtractive processing steps or additive processing steps of at least a part of the substrate 1154 where cured photocurable material is absent. As illustrated in Fig. 16A, the top diagram represents an output of the method 1100 after the step 1106. The output has a microstructure pattern formed by cured photocurable material 1600 on the top surface of the substrate 1154. The top surface of the ate 1154 also includes areas 1602 where the cured photocurable material 1600 is absent. With ative processing illustrated in Fig. 16A, the method 1110 further es removing some of the substrate 1154 by, for example, etching or sand—blasting the top surface of the substrate 1154 and subsequently removing the cured photocurable material 1600. The output of the subtractive processing is a substrate—only material that includes a microstructure pattern corresponding to the microstructure pattern of the output of step 1106. Alternatively, with additive processing illustrated in Fig. 16B, the method 1110 further es adding additional substrate material by, for example, depositing the additional substrate material on the top surface of the substrate 1154 and subsequently removing the cured photocurable material 1600. The output of the additive processing is a substrate—only material that includes a microstructure pattern corresponding to (the negative of) the microstructure pattern of the output of step 1106.

The described arrangements of Figs. 6—15 overcome at least some of the production ulties inherent in the arrangements of Figs. 2—5. For example, in one arrangement, the substrate 43 is the top coat of the exterior surface of an aircraft. As another e, the arrangements of the system illustrated in Figs. 12 and 14 allow creation of a microstructure pattern Without the need for multiple—exposure A characteristic of the roller apparatus, as illustrated in Figs. 6—10 and its contactless nature, is that the roller apparatus can be applied to complex curved surfaces and to the Windows of aircraft, thereby ensuring both greater coverage and drag reduction.

The rollable system 1400 illustrated in Fig. 14A as well as the robotic system 1450 illustrated in Fig. 14C and described in corresponding paragraphs also provide a similar characteristic.

The foregoing bes only some embodiments of the present invention and modifications, obvious to those skilled in the art, can be made thereto Without departing from the scope of the present ion.

The term “comprising” (and its grammatical variations) as used herein is used in the inclusive sense of “including” or g” and not in the ive sense of “consisting only of”. 1003358336

Claims (28)

1. A method of ing a microstructure n on an exterior surface, the method comprising the steps of: applying a layer of photocurable material to the exterior surface, the applied 5 layer of photocurable material having a first side al to the exterior e and an opposed, second side distal from the exterior surface; irradiating onto the second side of the applied layer of the photocurable material with radiation to initiate curing of the irradiated photocurable material from the first side towards the second side; and 10 removing uncured urable material to form the tructure pattern; wherein: the initiated curing causes a curing height profile across the layer of the photocurable material corresponding to a predetermined intensity profile of the radiation.

2. The method as claimed in claim 1 wherein irradiating the photocurable material includes irradiating the photocurable material through a photomask.

3. The method as claimed in claim 1 or 2 wherein the irradiating includes 20 irradiating the photocurable material for a predetermined duration.

4. The method as claimed in claim 4 wherein the curing includes ted curing of part of the layer of the photocurable material based on the level of diffused oxygen into the layer of the photocurable material. 25

5. The method as claimed in any one of claims 1 to 4 wherein the level of diffused oxygen near the second side is greater than that near the first side of the layer of the photocurable material.

6. The method as claimed in any one of claims 1 to 5, wherein the inhibited 30 curing is further based on exposure time and/or intensity.

7. The method as claimed in any one of claims 4 to 6 wherein the inhibited curing inhibits risation in the photocurable material. 1003358336

8. The method as claimed in any one of claims 1 to 7 wherein the predetermined irradiation intensity profile includes a periodic intensity profile to cause a corresponding periodic curing height profile across the layer of irradiated 5 photocurable material.

9. The method as claimed in claim 8 n the periodic curing height profile es periodicity in a first dimension across the layer of irradiated photocurable material and substantially non-periodic profile in a second 10 dimension, orthogonal to the first dimension, across the layer of irradiated urable material.

10. The method as claimed in claim 9 further comprising translating, relative to the exterior surface, the radiation along the second dimension to provide the 15 substantially non-periodic profile.

11. The method as claimed in claim 10 wherein the periodicity in the first dimension causes any one or more of the ing tructure patterns to form: 20  a sawtooth riblet geometry;  a scalloped riblet geometry; and  a blade riblet geometry.

12. The method as claimed in claim 8 wherein the periodic curing height profile 25 includes periodicity in a first dimension across the layer of irradiated photocurable material and icity in a second dimension, orthogonal to the first dimension, across the layer of irradiated photocurable material.

13. The method as claimed in claim 12 wherein the periodicity in the first 30 dimension and the periodicity in the second ion causes either or both of the following microstructure patterns:  a lotus leaf ry; and  a superomniphobic geometry. 1003358336

14. The method as claimed in any one of claims 1 to 13 further comprising, subsequent to formation of the microstructure pattern, active processing of at least a part of the exterior surface where cured photocurable material is 5 absent.

15. The method as claimed in any one of claims 1 to 13 further comprising, subsequent to formation of the microstructure pattern, additive processing of at least a part of the exterior e where cured photocurable al is absent.

16. The method as claimed in claim 2, wherein irradiating es ating the applied layer of photocurable material via the photomask positioned at an adjustable distance from the applied layer of photocurable material. 15

17. The method as claimed in any one of claims 1 to 16, wherein irradiating includes irradiating the applied layer of photocurable material at 405 nm.

18. A method, sing: initiating a process of irradiating at least a portion of a layer of 20 photocurable material on a substrate with light for curing the photocurable material to initiate curing of the photocurable material proximate the substrate, wherein the light comprises an intensity e with ions along at least a first dimension; and ceasing the process of irradiating of the layer of photocurable material, 25 to form cured photocurable material within the layer of photocurable material in a microstructure pattern, the cured photocurable al having a variable curing height profile relative to the substrate, including a variable curing height e across tructures in the microstructure pattern. 30

19. The method of claim 18, further comprising continuing the process of irradiating at least a portion of the layer of photocurable material after the initiation and until the ceasing, whereby the microstructure pattern is formed by a single exposure of the photocurable material to the curing light. 1003358336

20. The method of claim 18 or claim 19, further comprising controlling, between the initiation and g of the process of irradiating the layer of photocurable material, at least one of the irradiation intensity and duration to affect the 5 variable curing height profile across microstructures in the microstructure pattern.

21. The method of any one of claims 18 to 20, comprising ceasing the process of irradiating the layer of rable al before the photocurable material 10 has cured the full height of the photocurable material.

22. The method of any one of claims 18 to 20, comprising ceasing the process of ating the layer of phtocurable material after the photocurable material has cured the full height of the photocurable material in one part of a 15 microstructure in the microstructure and before the photocurable material has cured the full height of the urable material in another part of the same tructure.

23. The method of any one of claims 18 to 22, n the light does not comprise 20 substantial intensity variations along a second dimension substantially orthogonal to the first dimension, and wherein the irradiating comprising irradiating a first portion of the layer of photocurable al and translation along the second dimension to irradiate a second portion of the layer of photocurable material, different to the first portion, whereby the 25 microstructure pattern comprises a riblet geometry with riblets extending across the first and second portions of the layer of photocurable material.

24. The method of claim 23, further comprising maintaining a substantially constant translation speed, to provide a constant curing depth profile in the 30 second dimension.

25. The method of claim 23, further comprising varying a speed of the translation, to e a non-constant curing depth profile in the second dimension. 1003358336

26. The method of any one of claims 18 to 25, further comprising forming the intensity profile with ions along at least a first dimension by passing the light via a mask spaced apart from the layer of photocurable material.

27. The method any one of claims 18 to 26, further comprising removing uncured photocurable material within the layer of photocurable al, thereby exposing at least part of the microstructure pattern. 10

28. A system configured to perform the method of any one of claims 1 to 27.