NZ723275B2 - An electron emitter for an x-ray tube - Google Patents

Abstract

Example embodiments presented herein are directed towards an electron emitter for an x-ray tube. The electron emitter comprises an electrically conductive substrate and a nanostructure material. The nanostructure material is comprised on at least a portion of the electrically conductive substrate. The nanostructure material is made of oxides, nitrides, silicides, selinides or tellurides. In a particular aspect the present invention provides an electron emitter for an x-ray tube, the electron emitter comprising: an electrically conductive substrate; and a nanostructure material is comprised on at least a portion of the electrically conductive substrate, wherein the nanostructure material is made of ZnO, wherein the nanostructure material is grown on the electrically conductive substrate, wherein the electrically conductive substrate is attachable to a heating element via two electric feed-through at the cathode end of the tube; and wherein the heating element is arranged to cause an increase in the temperature of the electron emitter to a level that assists the emission of electrons from the emitter when the cathode is negatively biased, wherein the electron emitter is configured for Schottky emission when the heating element is in an on-state and the electron emitter is negatively biased, and wherein the electron emitter is configured for field emission when the heating element is in an off-state and the electron emitter is negatively biased. Such an electron emitter may be used for hybrid emission, such as Schottky emission or field emission. he nanostructure material is made of oxides, nitrides, silicides, selinides or tellurides. In a particular aspect the present invention provides an electron emitter for an x-ray tube, the electron emitter comprising: an electrically conductive substrate; and a nanostructure material is comprised on at least a portion of the electrically conductive substrate, wherein the nanostructure material is made of ZnO, wherein the nanostructure material is grown on the electrically conductive substrate, wherein the electrically conductive substrate is attachable to a heating element via two electric feed-through at the cathode end of the tube; and wherein the heating element is arranged to cause an increase in the temperature of the electron emitter to a level that assists the emission of electrons from the emitter when the cathode is negatively biased, wherein the electron emitter is configured for Schottky emission when the heating element is in an on-state and the electron emitter is negatively biased, and wherein the electron emitter is configured for field emission when the heating element is in an off-state and the electron emitter is negatively biased. Such an electron emitter may be used for hybrid emission, such as Schottky emission or field emission.

Description

AN ELECTRON EMITTER FOR AN X-RAY TUBE TECHNICAL FIELD Example embodiments presented herein are directed towards an electron emitter for an x- ray tube. The electron emitter comprises a nanostructure g made of , nitrides, si|icides, se|inides or tellurides. Example ments are further directed s an x- ray tube.

BACKGROUND The emission of electrons from the surface of a conductor is caused by heating the conductor to elevated temperatures, the thermionic emission; by shaping the conductor into a sharp point and applying a negative voltage, the field on, or by applying a moderate heating to assist the field emission, for example, Schottky emission (as a matter of fact, there are more on mechanisms as well, like photoemission and gas ion impact emission). An electron emitter is commonly referred to as a cathode. The cathode working under the respective emission modes are called the hot cathode, cold cathode or Schottky cathode, tively. A device that provides electron beams is called an electron source or electron gun. The electrons are perhaps the most common stimulus for secondary beams.

The x-ray is generated by the bombardment of energetic electrons on a metal surface. In this setting, an x-ray source is a device comprising 1) a cathode and 2) an electron receiver known as the target or anode. The anode is the x-ray emitter. The cathode and the anode are arranged in a particular configuration, and are enclosed in a vacuum housing. Moreover, an x-ray system may comprise the following components, 1) the x-ray source, 2) the computerized lation and handling device, 3) the detectors and 4) the power unit(s). In combination with other technologies, x-ray finds applications in medical g, security inspection, and nondestructive testing in ry. Computer technology has revolutionized the use of x-ray in modern society, for example, x-ray CT scanner (computed tomography). The advancement in detector technology allowed ed energy resolution, digital images, and continuously-increasing scan rates and areas. On contrary, the logy on the electron source for generating x-rays remains essentially the same since the birth of the Coolidge tube for about 100 years ago, when William Coolidge revolutionized the way X-ray was generated by replacing the gas-filled tubes with an evacuated tube housing a hot tungsten nt to utilize thermionic emission.

SUMMARY Perhaps all x-ray tubes used in x-ray imaging utilizes hot cathodes of tungsten filaments based on onic emission. In the past decade or so, attempt was made to use carbon bes (CNTs) as cold cathode to generate X-rays by means of field emission. Such electron emission is induced by a high electric field t heating. CNTs are thought as an ideal emitter for electrons. However, to use them in x-ray sources, the manufacture process and work conditions seem to present severe challenge to their material properties. The t output is still well below the level for practical applications. Thus, at least one object of the example embodiments presented herein is to provide an alternative electron emitter, which may provide for alternate means of electron emission to overcome the material and operational disadvantages inherent in the hot cathodes as well as in the cold cathode based on CNTs; and at the same time brings in improved performance of the x-ray sources.

Accordingly, the example embodiments presented herein are directed towards an electron emitter for x-ray device. The electron emitter comprises a nanostructure material made of oxides, nitrides, silicides, selinides or tellurides. Such a nanostructure material makes the electron emitter suitable for field emission and more importantly for ky emission. The use of a lly assisted electron emission allows for compensation in the ties of the hot and cold cathodes. The benefit of the example ments will be clear, when the comparisons are made between the Schottky emission, the thermionic on, and the field on. It is well known that a cold cathode can be poisoned by the adsorption of electronegative elements such as 8, Cl existing as al gaseous species in the tube. If the adsorption is severe, the cathode will cease to emit ons.

For a field emission X-ray tube, the cold cathode can be regenerated by removing the tube from the housing and baking out the entire tube in an oven, and then mount the tube back to see the effect of baking out, a cumbersome s. On the other hand, for a Schottky emission tube, the heating resulting in a moderate temperature rise at the cathode assists the emission of the electrons while at the same time preventing the adsorption of the poisoning gas atoms or molecules on the e. In case the poisoning occurs, the regeneration can be done by heating the cathode directly t removing the tube from the tube housing. The lower power consumption will result in a more compact power source to be utilized, thereby allowing for the x-ray device to become more portable. Furthermore, the use of such electron emission mode eliminates the need for a cooling system or long cool down and warm up periods which are common for hot filament-based systems.

The example ments are ed towards an electron emitter for an x-ray tube. The electron emitter comprises an electrically conductive substrate and a nanostructure material. The nanostructure material is comprised on at least a portion of the electrically conductive ate. The nanostructure material is made of oxides, nitrides, silicides, selinides or tellurides.In a particular aspect the present invention provides an on emitter for an x-ray tube, the electron emitter comprising: an electrically conductive substrate; and a nanostructure material is comprised on at least a portion of the electrically tive substrate, wherein the ructure material is made of ZnO, wherein the ructure material is grown on the electrically conductive substrate, wherein the electrically conductive substrate is attachable to a heating element via two electric hrough at the cathode end of the tube; and wherein the heating element is arranged to cause an increase in the temperature of the electron emitter to a level that assists the emission of electrons from the emitter when the cathode is negatively biased, wherein the electron emitter is configured for Schottky on when the heating element is in an on-state and the electron emitter is negatively biased, and wherein the electron emitter is configured for field emission when the heating element is in an off-state and the on emitter is negatively biased.

An example advantage of the above embodiment is that the use of such a nanostructure al allows for a thermally assisted emission, such as a ky emission. Thus, a more compact x-ray device may be obtained as ed with Thermionic emission.

According to some of the example embodiments, the ically conductive substrate is made of stainless steel, nickel, nickel based alloys, iron or iron based alloys.

According to some of the example embodiments, the electrically conductive substrate is in the shape of a solid cylinder with a circular, nal, or star cross- section.

An example advantage of the above embodiment is the ability to control the direction, density, as well as other characteristics, of the on emission by varying the shape of the electron emitter.

[FOLLOWED BY PAGE 3a] According to some of the example embodiments, the nanostructure material is doped or ed with a dopant element comprised in column IA, IIA, IB, IIIA, VIA, or VIIA in ic table of the elements.

According to some of the example embodiments, the ructure material is made of ZnO. It should be appreciated that the ructure material may be made of iron oxides, gallium nitride or any other related alloys or compounds thereof.

An example advantage of such embodiments is the ability of providing an alternative to the CNT based electron emitters. The use of such an ative provides an example benefit of providing an electron emitter which is more compatible with Schottky based emission. Carbon based electron emitters are prone to damage at the atures and reactive gaseous environment of typical tube manufacture process. Whereas ZnO and related materials are high in melting temperature and chemically more stable with equally attractive field emission performance to CNTs.

[FOLLOWED BY PAGE 4] According to some of the example embodiments, the portions of the electrically conductive substrate which do not se the nanostructure material further comprising a dielectric layer. According to some of the example embodiments, the dielectric layer is SiOZ.

An e advantage of such ments is that ability to l the electron on. The controlling may be in the form of controlling a direction or density of the electron emission. ing to some of the example embodiments, the electrically conductive ate is attachable to a heating element. An example advantage of such an ment is the ability of providing different electron emission modes, for e, a Schottky emission.

According to of the example embodiments, the electron emitter is configured for Schottky emission when the heating element is in an te and the on emitter is negatively biased. ing to some of the example embodiments, the electron r is configured for field emission when the heating element is in an off-state and the electron emitter is negatively biased.

An example advantage of such embodiments is that the electron emitter may be configured for dual operational modes allowing for both field emission and Schottky based emission. Furthermore, a hot filament can also be placed. Such an embodiment has the example advantage of providing a versatile device utilizing all three electron emission modes whenever , which may generate x-ray images at various resolutions and contrast levels.

Some of the embodiments are ed towards an x-ray device comprising the electron emitter described above. An example advantage of having such an x-ray device is the ability of having a versatile device which may operate in a Schottky emission mode.

Thus, the device may be portable as described above.

According to some of the example embodiments, the x-ray device further comprises a plurality of electron emitters arranged to emit electrons towards an electron receiving component. According to some of the example embodiments, the plurality of electron emitters is activated individually, simultaneously or sequentially.

Such embodiments have the example advantage of providing a more versatile device as activating the different electron emitters may provide a difference in the resulting electron on. Thus, differences in image resolution, etc. may be obtained.

The electron emitters disclosed above with the anode constitutes a so called diode X-ray tube. In what follows, the electron source can be configured to consist of the cathode as sed above and a grid electrode. And an X-ray source consisting of this type of electron source and an anode is referred to as a triode tube.

The example ments are directed towards an electron source for X-ray tube.

The electron source comprises a cathode as disclosed above and a grid, which are placed at a fixed interval of distances and fixed by a ceramic . The grid is made of electrically conductive wires of equal diameter. Furthermore, the wires are made of high melting point, low vapor pressure and electrically conductive materials, such as W, Mo, Ta, Ni, stainless steel, or nickel based alloys. The er of the wires varies between 30 um and 150 um. The opening ratio of the grid varies between 50% and 80%. Furthermore, the surface of the wires in the grid is coated with a thin layer or ayers of material(s) with properties of pronounced secondary electron emission. Alternatively, the coating is a UV ng material. Thus the coating increases the output ity of the electrons from the source. It is evident, nevertheless better to point out that g a grid in front of the cathode is a common practice in vacuum tubes and even field emission devices, the present embodiment exhibits clear distinction to prior art in the following aspects: the cathode material, emission mechanism, and an enhancement effect. Thus the overall advantages of a this kind of electron source as manifested in a triode X-ray tube are the independency of the electron beam on the anode, and the enhanced current output.

BRIEF DESCRIPTION OF THE GS The foregoing will be apparent from the following more particular description of the example embodiments, as illustrated in the accompanying drawings in which like reference characters refer to the same parts hout the different views. The gs are not necessarily to scale, emphasis instead being placed upon illustrating the example embodiments. is a schematic of an x-ray device based on thermionic emission; is a schematic of an x-ray, according to the example embodiments described herein; is an illustrative example of an electron emitter with a grid, ing to some of the example ments described herein; is an illustrative example of different shapes an electron r may have, according to some of the example embodiments described herein; is a schematic of an x-ray device comprising multiple electron emitters, according to some of the example embodiments described herein; and FIGS. 6A and 6B are graphs illustrating the I-V characteristics of the on emitters of according to some of the example embodiments described herein.

DETAILED DESCRIPTION In the following description, for purposes of explanation and not tion, specific details are set forth, such as particular components, elements, ques, etc. in order to provide a thorough understanding of the example embodiments. However, it will be apparent to one skilled in the art that the example embodiments may be practiced in other manners that depart from these specific details. In other instances, detailed descriptions of well-known methods and elements are omitted so as not to obscure the description of the example embodiments. The terminology used herein is for the purpose of describing the example embodiments and is not intended to limit the embodiments ted herein.

Example embodiments ted herein are directed towards an electron emitter for an x-ray device, where the electron emitter comprising a nanostructure material made of oxides, nitrides, silicides, selinides or tellurides. Such an electron emitter is useful for enabling an x-ray device with a Schottky emission ing mode. In order to better describe the example ments, a problem will first be identified and discussed.

Figure 1 illustrates a traditional x-ray tube. The x-ray tube of Figure 1 features an evacuated glass tube 10 comprising a hot filament cathode 12 and an anode 14 made of refractory metal/alloy. The surface of the anode 14 faces the cathode 12 at a predetermined ation angle. An electric current, provided by a power supply 13, passes through the filament cathode 12 causing an increase in the ature of the filament 12 to a level that emits an electron beam 16 from this filament. The electron beam 16 is then accelerated towards the anode 14 in the electric field. This results in an x-ray beam 18 which is directed out of the device via a window 20. The voltage difference between the cathode and the anode determines the energy of the x-ray beam.

Perhaps all x-ray tubes used in X-ray imaging utilizes hot cathodes of tungsten nts based on thermionic emission. In the past decade or so, attempt was made to use carbon nanotubes (CNTs) as cold e to generate X-rays by means of field emission. Such electron emission of is induced by a high electric field without heating.

CNTs are t as an ideal r for ons. r, to use them in x-ray sources, the manufacture process and work conditions seem to present severe challenge to their material properties. The current output is still well below the level for practical applications. Thus, at least one object of the example embodiments presented herein is to provide an alternative electron emitter, which may provide for alternate means of electron emission to overcome the material and ional disadvantages inherent in the hot cathode as well as in the cold cathode based on CNTs; and consequently brings in portable x-ray sources with improved performance.

Accordingly, the example embodiments presented herein are ed towards an on emitter for x-ray device. The electron emitter comprises a nanostructure material made of oxides, nitrides, silicides, des or tellurides. Such a nanostructure material makes the electron emitter suitable for field emission and more importantly for Schottky emission. The use of a thermally assisted electron emission allows for compensation in the properties of the hot and cold es. The benefit of the example embodiments will be clear, when the comparisons are made between the Schottky emission, the thermionic emission, and the field emission. It is well known that a cold cathode can be poisoned by the adsorption of onegative elements such as 8, Cl existing as residual gaseous species in the tube. If the adsorption is severe, the cathode will cease to emit electrons.

For a field emission X-ray tube, the cold e can be regenerated by removing the tube from the housing and baking out the entire tube in an oven, and then mount the tube back to see the effect of baking out, cumbersome process. On the other hand, for a Schottky emission tube, the heating resulting in a moderate ature rise at the cathode assists the emission of the electrons while at the same time preventing the adsorption of the poisoning gas atoms or molecules on the cathode. In case the poisoning occur, the regeneration can be done by heating the cathode ly without removing the tube from the tube housing. The lower power consumption will result in a more compact power source to be utilized, thereby ng for the x-ray device to become more portable. Furthermore, the use of such electron emission mode eliminates the need for a cooling system or long cool down and warm up periods which are common for hot filament-based systems.

Figure 2 rates an x-ray device according to the example embodiments. The x- ray device of Figure 2 comprises an evacuated glass tube 10 comprising an electron emitter, or cathode, 22 and an electron receiving ent 14. The surface of the electron receiving component 14 faces the electron r 22 at a predetermined inclination angle. The plane of the emitters can also be arranged parallel to the electron receiving component. An electric current, provided by a power supply 28, passes through a heating element 21 causing an increase in the temperature of the electron r 22 to a level that assist the emission of electrons 25 beam from the electron emitter 22, when the cathode at the same time is negatively biased. Such emission is known as Schottky emission. In contrast to the on emission of Figure 1, which is induced solely by the high temperatures due to heating, the on of Figure 2 is induced by electric field under assistance of a moderate heating.

The electrons of electron beam 25 are then accelerated towards the electron receiving component 14 with an electric field. This results in an x-ray beam 26 which is ed out of the device via a window 20. The e difference between the electron emitter and the electron receiving component determines the energy of the x-ray beam.

According to some of the example embodiments, a grid 30 is placed in between the surface 23 comprising the nanostructures 24 of electron emitter and the electron receiving component 14 that acts as an extraction electrode, as illustrated in Figure 3. According to some of the example embodiments, a spacer 31 is placed n the electron emitter and the grid 30. The grid may be placed at an interval distance between 100um and 1000um which is fixed via the spacer. A circular cover is placed on top of the grid acting as the grid electrode providing a voltage to the grid, 32. ing to some of the example embodiments, the spacer may be a ceramic .

The grid is made of electrically conductive wires of equal diameter. Furthermore, the wires are made of high melting point, low vapor pressure and electrically conductive materials, such as W, Mo, Ta, Ni, stainless steel, or nickel based alloys. The diameter of the wires varies between 30 um and 150 um. The linear opening ratio of the grid varies between 50% and 80%. Furthermore, the surface of the wires in the grid is coated with a thin layer or multilayers of material(s) with properties of pronounced secondary electron on, such as MgO and d materials. Alternatively, the g is a UV emitting material, such as GaN and d materials.

Thus, the coating increases the output intensity of the electrons from the electron emitter. Thus, the overall ages of a this kind of electron emitter as manifested in a triode X-ray tube, as illustrated in Figure 5, are the independency of the electron beam on the anode, and the enhanced current output. Furthermore, the field established n the electron emitter and the grid determines the intensity of the on beam. Again, the e difference between the electron emitter and the electron receiving component 14 ines the energy of the x-ray beam. It should be appreciated that the grid and spacer of Figure 3 may be applied to an electron emitter ing to any of the example embodiments provided herein.

The electron emitter 22 comprises an electrically conductive substrate 23 comprising of a coating of nanostructures 24. The heating element 21 is attachable to the electrically conductive substrate 23 via two electric feed-through at cathode end of the tube. The nanostructure coating 24 may be grown on the electrically conductive substrate 23. The ructure coating may be in the form of nanoparticles, nanowires, nanorods, nano tetrapods or nanotubes. The materials of the substrate can be stainless steel, nickel, nickel-based alloys, iron or iron-based alloys. According to some of the example ments, the substrate is pre-formed into various shapes.

Figure 4 illustrates example shapes in which the electron emitter may be shaped.

The electron emitter 22a is in the shape of a rounded pyramid comprising an electrically conductive ate 23a and a coating of nanostructures 24a. A r example of an electron emitter 22b is provided in the form of a solid cylinder also comprising an electrically conductive substrate 23b and a coating of nanostructures 24b. Figure 4 provides a further example of an electron emitter in the form of a hollow cylinder 22c featuring an electrically conductive substrate 23c and a coating of nanostructures 24c. An additional example of an electron emitter is provided in the form of a hollow star 22d comprising an electrically conductive substrate 23d and a coating of nanostructures 24d.

It should be appreciated that such shapes may be adapted for different uses of the x-ray as the shapes may affect the direction of the emitted electrons. It should further be appreciated that other shapes may also be ed in the x-ray device according to the example embodiments.

The substrates described in Figure 4 may be bundled in parallel at a given space.

The surface formed by the top ends of the substrates may be planar, e or convex in shape to shape the focal spot of the on beam.

According to some of the example embodiments, the nanostructure coating may be grown by a solid-liquid-gas phase method, chemical vapour tion (CVD) process, or a chemical solution method. According to some of the example embodiments, the nanostructure coating is configured to be altered, with respect to morphology, to further facilitate the electron emission by al, electrochemical or l means in or after the growth process.

According to some of the example ments, the nanostructure coating may be made of oxides, nitrides, des, selinides or tellurides. According to some of the example embodiments, the nanostructure coating may be made of oxide semiconductors, for example, ZnO. ZnO is an , wide band gap semiconductor. The conductivity is associated with the oxygen vacancy generated in the growth process.

Improvement on the conductivity is achieved by doping the chemical elements in the columns lA, llA, lB, lllA, VIA, VllA in the ic table of the elements. Post-growth heat treatment is applied to homogenize the dopants or to partially segregate them to the surface. The morphology of the nanostructure can be altered by chemical or electrochemical means to e local field enhancement. UV ent may also be applied to improve the surface properties. A e coating may be applied to the nanostructures to further enhance the electron emission process through decreasing the work function at the surface of the emitter.

According to some of the example embodiments, a tric layer, for example, 8102, may be added on the electrically conductive substrate in areas in which the coating of the nanostructures is not present. Such a dielectric coating may be useful in directing the electron emission.

When a moderate heating is applied, via the heating t 21, while the electron emitter is negatively , the electrons are emitted by Schottky emission. When the heating is turned off, while the cathode is negatively biased, the ons are emitted by field emission. The added function of heating, which is absent in pre art field emission x- ray sources, may also be d to regenerate the on emitter by removing ed adsorbed chemical species from the surface of the emitters in the case of cathode poisoning. ing to some of the example embodiments, multiple electron emitters may be used in the x-ray device. Figure 5 illustrates an x-ray tube in which multiple electron emitters. In this embodiment, three electron emitters 22_1, 22_2 and 22_3 are assembled in the enclosed tube 10 with the emitters facing the electron receiving component 14. The number and spacing of the electron emitters may vary.

It should be iated that any number of electron emitters may be employed in the x-ray device according to the e embodiments. It should further be appreciated that the electron emitters of Figure 5 may be the electron emitter featured in any of Figures 2 thru 4, or an emitter of any other shape. It should also be appreciated that the on emitters need not be identical and may comprise different shapes and/or characteristics with respect to one another.

The pattern of the arrangement of the electron emitters may be, but is not limited to, linear, circular, rectangle, square, or other polygonal shape. With respect to the relation to the on receiving component 14, the electron emitters 22_1, 22_2 and 22_3 may be arranged so all of them emit electrons 25a-25c directed to one focal spot on the electron receiving component 14, or so that they project a magnified or demagnified image of the emission pattern onto the electron ing component 14.

All these variations are intended to meet the requirement for the dimension and the shape of the x-ray beam 26. The electron emitters 22_1, 22_2 and 22_3 may be activated tively or individually, simultaneously or sequentially. Such a flexible activation 11 2015/052789 regime allows a high frequency, pulsing mode for x-ray generation by setting the output frequency of the power source and a wide range of dose selection by choosing the number of activated electron emitters 22_1, 22_2 and 22_3. The activation of the electron emitters 22_1, 22_2 and 22_3 may be controlled by the power supply 28.

The example embodiments presented herein allow for the dual tion of the electron emitters 22_1, 22_2 and 22_3, thereby providing a mechanism for stabilizing emission current, which is not available in t x-ray systems. It should be iated that the geneity in the emission is a serious problem in large area cathodes or multi cathodes. This problem stems from the geometrical and physical inhomogeneity of the emitters.

In other words, the problem of the emitters described above stems from material and processing issues. Therefore, some of the example embodiments are directed towards an improvement on the growth of the emitter material on the substrate.

According to some of the example embodiments, the existence of the inhomogeneity among the emitters is also solved at the component level. Such an example embodiment is described by taking a three-cathode configuration as example of Figure 5.

Figures 6A and 6B illustrates the current and voltage teristics of the electron emitter configuration of Figure 4. In each graph, the plotted points represented by the triangular, square and circular s represent the voltages and currents from the electron emitters 22_1, 22_2 and 22_3, respectively, of Figure 5.

Figure 6A illustrates an application of e V, while keeping a same distance between the same electron emitter and electron receiving component. Each electron emitter 22_1, 22_2 and 22_3, will emit current i1, i2 and i3, tively. As shown in the graph of Figure 6A, the amount of current supplied by the electron emission of each electron emitter differs. Although the inhomogeneity may be quantitatively described by ly defining the mean square error or root mean square deviation of the measured t values of all emitters in question, the graphical ence shown in Figure 6A is sufficient to illustrate the point.

If all of the three electron emitters should emit the same current, then different voltages v1, v2, and v3 need to be applied to the electron emitters 22_1, 22_2 and 22_3, respectively, as seen in Figure 6B. The advantageous consequence manifests itself when the electron emitters are directed to different focal spots to create a particular shape of the x-ray beam. The mechanism provides a spatial homogeneity of the x-ray beam by providing a nt current at all focal spots. A further advantage is that when the electron emitters are directed towards one focal spot, and biased sequentially, the emitters provide an electron emission with temporal homogeneity with a constant current over time. In on, to ensure the stability and homogeneity of the x-ray emission, a feedback monitoring circuit may be used to control the electron emission process.

According to some of the example embodiments, the ical power source 28 is r configured to supply a potential difference between the at least one electron ting component(s) and the electron receiving component for a diode tube in three bias modes, (-,0: cathode ve, anode grounded), (-,+: cathode negative, anode positive) and (0,+: e grounded, anode positive). The use of such bias modes is provided for inducing the ky emission or field emission. Thus, an example advantage of such an embodiment with lower heating power requirement is the elimination of a cooling system or long cool down and warm up periods which are common for hot filament-based systems. Thus, a more portable x-ray device may be obtained.

According to some of the example ments, the ical power source is configured to operate in DC mode, i.e. constant (-, 0), (-, +), (0, +); pulse mode, i.e. square waves with the anode grounded or with the cathode grounded; or AC mode, Le. a sinus wave. An example advantage of providing an electrical power source with different modes of operations is the ability of providing a more versatile device. For example, in pulse and AC modes, a defined rising time, frequency, duty cycle and pulse shape of waveform may be obtained.

It should be appreciated that the x-ray device described herein may be used in a number of fields. For example, the x-ray device may be used in a security scanning apparatus, for example, as one would find in an airport security check. As the use of the heat element and the Schottky on allows for a more portable , the x-ray device may be easily implemented in such a ty system.

A further example use of the x-ray device discussed herein is in medical scanning devices such as a computed tomography (CT) scanning apparatus or a C-arm type scanning tus, which may include a mini C-arm apparatus. A further example use of the x-ray device described herein is in a geological surveying apparatus.

It should be appreciated that the x-ray device described herein may be used in any non-destructive testing tus. A few example application of the x-ray device may be mammography, veterinary imaging, and X-ray fluorescence spectrometry, etc.

The description of the example embodiments provided herein have been presented for es of illustration. The description is not intended to be exhaustive or to limit WO 18178 13 e embodiments to the precise form disclosed, and modifications and variations are possible in light of the above teachings or may be acquired from ce of s alternatives to the provided embodiments. The examples discussed herein were chosen and described in order to explain the principles and the nature of various example embodiments and its cal application to enable one skilled in the art to utilize the example embodiments in various manners and with various modifications as are suited to the particular use contemplated. The features of the embodiments described herein may be combined in all le combinations of methods, apparatus, modules, systems, and computer program products. It should be appreciated that the example ments presented herein may be practiced in any combination with each other.

It should be noted that the word “comprising” does not necessarily e the presence of other elements or steps than those listed and the words “a” or “an” preceding an element do not exclude the presence of a plurality of such elements. It should further be noted that any reference signs do not limit the scope of the claims, that the example embodiments may be implemented at least in part by means of both hardware and software, and that several “means”, “units” or “devices” may be ented by the same item of hardware.

In the drawings and specification, there have been disclosed exemplary embodiments. However, many ions and modifications can be made to these embodiments. Accordingly, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the embodiments being defined by the following claims.

Claims (10)

1. An electron emitter for an x-ray tube, the electron emitter comprising: an electrically conductive substrate; and 5 a nanostructure material is comprised on at least a portion of the electrically conductive substrate, wherein the ructure material is made of ZnO, wherein the nanostructure al is grown on the electrically conductive substrate, wherein the electrically conductive substrate is attachable to a heating 10 element via two electric feed-through at the cathode end of the tube; and wherein the heating element is arranged to cause an increase in the temperature of the electron emitter to a level that s the on of electrons from the emitter when the cathode is negatively , wherein the electron emitter is configured for ky on when the 15 heating element is in an te and the electron emitter is negatively biased, and wherein the electron emitter is ured for field emission when the heating t is in an off-state and the electron emitter is negatively biased.

2. The electron emitter of claim 1, further comprising a grid situated at a fixed distance 20 from the electrically conductive substrate via a spacer, said distance being between 100µm and 1000µm.

3. The electron emitter of claim 1 or 2, wherein the electrically conductive substrate is made of stainless steel, nickel, nickel based alloys, iron or iron based .

4. The on emitter of claim 3, wherein the electrically conductive substrate is in the shape of a solid cylinder with a circular, polygonal, or star cross-section.

5. The electron emitter of any one of claims 1-4, wherein portions of the electrically 30 conductive substrate which do not comprise the nanostructure material further comprising a dielectric layer.

6. The electron emitter of claim 5, wherein the dielectric layer is SiO2. 35

7. An x-ray device comprising the electron emitter of any one of claims 1-6.

8. The x-ray device of claim 7, further comprising a plurality of electron emitters arranged to emit electrons towards an electron receiving component. 5

9. The x-ray device of claim 8, wherein the ity of on emitters are activated individually, simultaneously or sequentially.

10. The electron emitter of claim 1, substantially as herein described with reference to any one of the