NZ626604B2 - Apparatus for forming thin film - Google Patents
Apparatus for forming thin film Download PDFInfo
- Publication number
- NZ626604B2 NZ626604B2 NZ626604A NZ62660412A NZ626604B2 NZ 626604 B2 NZ626604 B2 NZ 626604B2 NZ 626604 A NZ626604 A NZ 626604A NZ 62660412 A NZ62660412 A NZ 62660412A NZ 626604 B2 NZ626604 B2 NZ 626604B2
- Authority
- NZ
- New Zealand
- Prior art keywords
- chamber
- container
- vacuum
- heat generating
- generating element
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 45
- 239000010408 film Substances 0.000 claims abstract description 169
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 101
- 238000005755 formation reaction Methods 0.000 claims abstract description 101
- 238000002955 isolation Methods 0.000 claims abstract description 26
- 230000000630 rising Effects 0.000 description 32
- 239000007789 gas Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 8
- 210000003128 Head Anatomy 0.000 description 5
- 241000894007 species Species 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000001105 regulatory Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000003197 catalytic Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229950008597 drug INN Drugs 0.000 description 3
- 238000004050 hot filament vapor deposition Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910020230 SIOx Inorganic materials 0.000 description 2
- 229910004207 SiNx Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 240000004524 Derris elliptica Species 0.000 description 1
- 241000343232 Oia Species 0.000 description 1
- 210000002381 Plasma Anatomy 0.000 description 1
- 239000004698 Polyethylene (PE) Substances 0.000 description 1
- 229910013379 TaC Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N Tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000001721 combination Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N p-acetaminophenol Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 235000014214 soft drink Nutrition 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
- B65D23/00—Details of bottles or jars not otherwise provided for
- B65D23/02—Linings or internal coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Abstract
apparatus for forming thin film on the outer surface of a bottle. Film formation upon a surface of a container (4) is performed in a vacuum chamber (1) and using a heat generating element (21). The apparatus includes an vacuum evacuation device that evacuate said vacuum chamber; and a shifting device that, after evacuation, shifts the container and the heat generating element relatively to each other within said vacuum chamber. Wherein said vacuum chamber is divided into a chamber for the container (1) where the container is inserted and taken out, and a chamber for protection of the heat generating element (2) where the heat generating element is held in a vacuum state, and a vacuum isolation device is provided between said chamber for the container and said chamber for protection. vice that, after evacuation, shifts the container and the heat generating element relatively to each other within said vacuum chamber. Wherein said vacuum chamber is divided into a chamber for the container (1) where the container is inserted and taken out, and a chamber for protection of the heat generating element (2) where the heat generating element is held in a vacuum state, and a vacuum isolation device is provided between said chamber for the container and said chamber for protection.
Description
/Y')6ontt
P"/u /-Jt
DESCRI PT ION
TITLE OF INVENT]ON: APPARATUS
FOR FORM]NG THIN FILM
TECHNICAL FIELD
t00011
The present invention rel-ates to an apparatus
forming thin film thj-n formation
filrm apparatus) that
forms a film gas performance
thin whose barrier is high, such
(Diamond
as a DLC Like Carbon) fil-m, an SiOx film,
an SiOC
fi-Im, an SiOCN film, an
SiNx film, an AIOx fil-m or the like,
upon either
the inner surface or the ouLer surface ot both,
of a container such as a polyethylene (a
terephthalate bottle
bottle) or the like.
BACKGROUND ART
0002
While in the prior art hollow containers made
from
plastic which are light in weight,
such as PET bottles, have
been used for storing soft drinks and the like, the use of
nlastir: r:onfai.nerS fielci has snre3d
in the fOOd and drink ry! v
rapidly due to their convenience and l-ow cost, and, at
present PET quite proport.ion
time, bottles constitute a Iarge
of al-I of the containers. However, with respect to the
plastic
containers, as compared with the characteristics
metallic cans and glass gas performance
bottles, as barrier
is lower,
ingress of oxygen into the interior of the
contaj-ners and discharge of carbonic gas
acid to the exterior
of the containers
may wel-l occurr so that, in some cases, the
performance quality
for maintaining of the contents would
inferior. Due to this, attempts
have been made to form upon
the inner
surface of the container, a film having gas
high
performance,
barrier such as a DLC
film or the like. It is
ncrssihle i-n fofm
a film whOse.ras vvrrvru herri er nerformanr-o is hioh-
ysp vq!!!s! yEt!v!lLtqIIUg Io rIIyIr,
such as the DLC
film or the like, upon either the inner
surface or the out.er surface of the
container in a vacuum
chamber of a vacuum environment plasma
according to a CVD
method, a metallic
vapor deposition method, a heat generating
el-ement CVD method, a spattering
method, or the like;
and in
this gas performance
case the barrier
against t.he ingress of
oxygen into the interior
of the container and the
discharge
of carbonic gas
acid to the exterior of the
container can be
dramatically
improved.
CITATION LIST
PATENT LITERATURE
Patent Document 1: Japanese Laid-Open Patent Publication 2008-127054.
Patent Document 2: Japanese Laid-Open Patent Publication 2004-107781.
TECHNICAL PROBLEM
When a container is mass produced by forming a thin film such as a DLC film or the like
upon its surface, the processes are repeated of: performing film formation upon the container in
the interior of a vacuum chamber that is maintained in the vacuum state; after having completed
film formation, returning the interior of the vacuum chamber to atmospheric pressure and taking
out a processed container upon which processing has been completed; and after that, putting the
next container into the vacuum chamber, vacuumizing the chamber, and performing film
formation. Due to this, when performing vacuumization of the vacuum chamber, it is always
necessary to vacuumize the chamber starting from the atmospheric pressure. Therefore, the
problem arises that the time period for vacuumizing the vacuum chamber becomes long, and the
cycle time becomes slow. In order to attain a shorter cycle time by shortening the time period
for vacuumization, it is necessary to provide a large sized vacuum pump, so that there are
problems that the facility cost and also its running cost are both increased.
Moreover, with respect to the heat generating element CVD method, which is also
known as the hot wire CVD method, the hot filament CVD method, the catalytic chemical vapor
deposition method and so on, in the process of forming a thin film upon the surface of the
container, a heat generating element is installed within the vacuum chamber because the film
formation is performed by putting the heat generating element in the neighborhood of the
container. Since the vacuum chamber is returned to the atmospheric pressure after the film
formation process has been completed, accordingly the heat generating element is periodically
exposed to air. As a result, there are problems that deterioration of the heat generating element
due to oxidization and so on takes place progressively, so that its functionality for film
formation becomes worse.
(8835805_1):SPM
OBJECT OF THE INVENTION
It is the object of the present invention to substantially overcome or ameliorate one or
more of the above disadvantages, or at least provide a useful alternative.
SUMMARY
[0006a]
According to an aspect of the present invention, there is provided an apparatus for
forming thin film comprising:
a vacuum chamber in which film formation upon a surface of a container is performed in
a vacuum state by using a heat generating element;
a vacuum evacuation device that vacuumizes said vacuum chamber; and
a relative shifting device that, after vacuumization of said vacuum chamber has started,
shifts the container and the heat generating element relatively to each other within said vacuum
chamber, wherein
said vacuum chamber is divided into a chamber for the container where the container is
inserted and taken out, and a chamber for protection of the heat generating element where the
heat generating element is held in a vacuum state, and
a vacuum isolation device is provided between said chamber for the container and said
chamber for protection.
[0006b]
According to another aspect of the present invention, there is provided a method of
forming thin film by using an apparatus for forming thin film comprising: a vacuum chamber in
which film formation upon a surface of a container is performed in a vacuum state by using a
heat generating element, the vacuum chamber being divided into a chamber for the container
where the container is inserted and taken out, and a chamber for protection of the heat
generating element where the heat generating element is held in a vacuum state; and a vacuum
isolation device which is provided between said chamber for the container and said chamber for
protection, wherein the method comprises the steps of:
inserting and taking out the container into and from said chamber for the container,
while keeping a state of the heat generating element in a vacuum state by closing said vacuum
isolation device when said chamber for protection is in the vacuum state;
(8835805_1):SPM
opening said vacuum isolation device when said chamber for the container has been
vacuumized to communicate together said chamber for the container and said chamber for
protection; and
shifting the container and the heat generating element relatively to each other after said
vacuum isolation device has been opened to form said thin film.
An apparatus for forming film of at least a preferred embodiment comprises: a vacuum
chamber in which film formation upon a surface of a container is performed in a vacuum state
by using a heat generating element; an vacuum evacuation device that vacuumizes the vacuum
chamber; and a relative shifting device that, after vacuumization of the vacuum chamber has
started, shifts the container and the heat generating element relatively to each other within the
vacuum chamber. The heat generating element is a component that the element itself is not
substantially vaporized, and that is capable of decomposing a raw material gas into chemical
species by a catalytic chemical reaction and/or thermally; this heat generating element may be a
wire the main component of whose outer layer is, for example, tantalum, tantalum carbide,
tungsten, tungsten carbide, nickel-chrome alloy, or carbon.
Preferably, it is possible to perform film formation at any of the following stages: the
stage of inserting the heat generating element into the container; the stage of shifting the heat
generating element and the container relatively to each other; and the stage of taking out the heat
generating element from the container.
The insertion and removal need not only be performed once; they may be performed
repeatedly. Accordingly, it becomes possible to perform film formation for only a short time
period at the locations where time period for film formation should be limited from the point of
view of thermal deformation, while with respect to the other locations, film formation is
performed sufficiently, and as a result it becomes simple and easy to enhance the barrier
performance of the entire container.
Preferably, the relative shifting device may relatively shift the container and the heat
generating element at variable speed.
Preferably, since it is possible to shift the container and the heat generating element
relatively to each other at variable speed, it is possible to adjust the time period for film
formation upon each portion of the container according to the container shape, the container heat
(8835805_1):SPM
resistance characteristics, and the required performance for the container. Thereby, it becomes
simple and easy to adjust the barrier performance and external appearance of the container.
Preferably, the vacuum chamber is divided into a chamber for the container where the
container is inserted and taken out, and a chamber for protection of the heat generating element
where the heat generating element is held in a vacuum state; and a vacuum isolation device may
be provided between the chamber for the container and the chamber for protection.
Preferably, it is possible always to keep the interior of the chamber for protection in a
vacuum state, since the vacuum chamber is divided into: the chamber for the container for
inserting the container to perform film formation upon the container; and the chamber for
protection for holding the heat generating element in a vacuum state. Due to this, it is possible to
prevent deterioration of the heat generating element, and that its functionality for film formation
does not decrease. Moreover, at the moment of film formation, vacuumization of the chamber
for the container from atmospheric pressure is performed, and when the chamber for the
container has reached the predetermined vacuum pressure, then it is possible to lower the
vacuum pressure of the chamber for the container by establishing communication thereof with
the chamber for protection having a lower vacuum pressure than the chamber for the container.
In other words, it is possible to shorten the time period for vacuumization of the chamber for the
container and to shorten the cycle time, since the chamber for protection functions as a vacuum
buffer.
Preferably, each of the chamber for the container and the chamber for protection may be
linked to an individual vacuum evacuation device.
Preferably, the chamber for the container may be vacuumized from atmospheric pressure
to be brought to a vacuum state at a moment of film formation upon the container, and be
returned to atmospheric pressure after the film formation has been completed.
Preferably, while said chamber for the container is returned to atmospheric pressure after
the film formation being completed, the chamber for protection may be kept in a vacuum state.
(8835805_1):SPM
Preferably, the vacuum isolation device may be opened when the chamber for the
container has been vacuumized, so as to communicate together the chamber for the container
and the chamber for protection.
The chamber for the container may be provided as a chamber for film formation where
the film formation is performed upon the container, due to the relative shifting device which is
provided to shift the heat generating element between the chamber for protection and the
chamber for the container.
Preferably, the heat generating element may be inserted into the chamber for the
container after the vacuum isolation device has been opened, and be returned to the chamber for
protection after film formation has been completed.
Preferably, since the heat generating element is always kept in a vacuum state,
accordingly it is possible to prevent deterioration of the heat generating element, and its
functionality for film formation does not decrease.
Preferably, after the film formation has been completed and after the heat generating
element has been returned to the chamber for protection, the vacuum isolation device may be
closed.
[Paragraphs 0013 to 0014 intentionally deleted]
Preferably, the chamber for protection may be provided as a chamber for film formation
where the film formation is performed upon the container, due to the relative shifting device
which is provided to shift the container between said chamber for the container and said
chamber for protection. In particular, if a mechanism is provided that is capable of adjusting the
shifting speed at which the container is shifted, then it is possible to adjust the time period for
film formation upon each of the portions of the container according to the container shape, the
container heat resistance characteristics, and the performance required for the container; and it
becomes simple and easy to adjust the barrier performance and external appearance of the
container.
Preferably, by raising and lowering the container between a container in/out chamber as
the chamber for the container and a film deposition dedicated chamber as the chamber for
protection, it is possible to supply the unprocessed container from the container in/out chamber
(8835805_1):SPM
into the film deposition dedicated chamber, and it is also possible to take out the processed
container from the film deposition dedicated chamber and transfer it to the container in/out
chamber.
Preferably, the container may be inserted into the chamber for protection after the
vacuum isolation device has been opened, and is returned to the chamber for the container after
the film formation has been completed. After the film formation has been completed and after
the container has been returned to the chamber for the container, the vacuum isolation device
may be closed.
[Paragraphs 0017 to 0018 intentionally deleted]
Preferably, the heat generating element may be inserted into the container when the
container has been shifted into the film deposition dedicated chamber. Since, due to this, film
formation is performed upon the inner surface of the container, accordingly the thin film is
prevented from physical contact imposed from the exterior of the container after the film
formation, so that quality management of the container becomes simple and easy.
However, performing the film formation upon the outer surface of the container has the
advantage that there is no contact between the film and the contents of the container, and this
can be implemented according to other aspects of the present invention. In this case, the film
deposition dedicated chamber may be adapted so that the heat generating element is disposed
externally to the container. By disposing the heat generating element appropriately, provided are
selectable variations which are a case that a film is formed only upon a part of the container
outer surface at one time and a case that a film is formed upon the entire outer surface of the
container at one time.
Preferably, the container chamber may comprise an open/close gate for taking out and
inserting the container from and into the container chamber.
Preferably, by opening the open/close gate, it is possible to take out the container from
the container chamber, or to insert the container into the container chamber. And moreover, after
(8835805_1):SPM
the container chamber is put into an airtight state by closing the open/close gate, it is possible to
vacuumize the interior of the container chamber with a vacuum pump.
Preferably, the apparatus for forming thin film may further comprise a container transfer
device that transfers an unprocessed container from a predetermined position into the chamber
for the container, and that transfers a processed container from the chamber for the container to
a predetermined position.
Preferably, it is possible to transfer the unprocessed container from a predetermined
position, for example from the conveyance surface of a conveyer, into the chamber for the
container, and moreover it is possible to transfer the processed container from the chamber for
the container to a predetermined position, for example, to the conveyance surface of the
conveyer.
If the film formation processing is performed upon the container in the chamber for
protection with the container in the inverted state, then the container transfer device should
include an inversion device. The container transfer device inverts with the inversion device, the
unprocessed container at a predetermined position, for example upon the conveyance surface of
a conveyer, to put the unprocessed container into an inverted state, and after that, the container
transfer device transfers the unprocessed container of the inverted state into the chamber for the
container. It should be understood that it would also be acceptable to arrange to invert the
container in a waiting position after the container has been transferred. Moreover, the container
transfer device transfers the processed container from the container in/out chamber to the
inversion device, and after that, inverts with the inversion device the processed container to be
put into the upright state. Then, the container transfer device returns the processed container in
the upright state to a predetermined position, for example upon the conveyance surface of a
conveyer.
On the other hand, if the film formation processing is performed upon the container in
the chamber for protection with the container in the upright state, then the container transfer
device should hold the unprocessed container at a predetermined position, for example upon the
conveyance surface of the conveyer to transfer the unprocessed container into the chamber for
the container. And, after having taken out the processed container from the chamber for the
(8835805_1):SPM
container, the container transfer device should transfer the processed container to a
predetermined position, for example upon the conveyance surface of the conveyer.
Preferably, the predetermined position may be a position upon a conveyer.
Preferably, the volume of a film deposition chamber as the chamber for the container
may be smaller than the volume of a heat generating element protection chamber as the chamber
for protection.
Preferably, when the film deposition chamber is vacuumized, it is possible to shorten the
time period for the vacuumization.
Preferably, the film deposition chamber may be disposed above, while the heat
generating element protection chamber is disposed below.
Preferably, when the heat generating element is· inserted from the heat generating
element protection chamber into the interior of the container within the film deposition chamber
at a moment of film formation, by putting the container into the inverted state, it is enough to
just elevate the heat generating element. Moreover, when the heat generating element is pulled
out from the container after film formation and is returned to the heat generating element
protection chamber, it is enough to just lower the heat generating element. Accordingly, it is
possible to employ a simple mechanism such as an electrically driven rising and lowering
cylinder or the like as a drive mechanism for the heat generating element.
Preferably, the capacity of the vacuum pump on the side of the film deposition chamber
is smaller than the capacity of the vacuum pump on the side of the heat generating element
protection chamber.
Preferably, it is possible to make the vacuum pump on the film deposition chamber side
more compact.
A preferred embodiment of the present invention provides the advantageous effects
listed below.
(8835805_1):SPM
(1) It becomes possible to perform film formation for only a short time period at the locations
where the film formation time period could be limited from the point of view of thermal
deformation, while with respect to the other locations it is possible to perform film formation
sufficiently. As a result, it becomes simple and easy to enhance the barrier characteristics of the
entire container.
(2) It becomes simple and easy to form a film thickness distribution that is appropriate
according to the intended purpose of the container and the required appearance quality of the
container. Moreover, it becomes possible to implement coloration having graduations or the
like.
(3) In the prior art, as a countermeasure to prevent thermal deformation of the container, it was
practiced only to start film formation after the heat generating element had been perfectly
inserted into the container; but, according to the present invention, it becomes possible to reduce
the cycle time, since the film formation can be started from the stage of inserting the heat
generating element into the container.
(4) Since it is possible always to keep the heat generating element in the vacuum state,
accordingly it is possible to prevent deterioration of the heat generating element, so that the
element's functionality for film formation does not decrease.
(5) With respect to only the container chamber, vacuumization and open to atmosphere are
implemented repeatedly, while the chamber for protection is always kept in the vacuum state.
Due to this, it is only necessary to vacuumize the chamber for the container at a moment of film
formation. Therefore it is possible to shorten the time period required during film formation for
vacuumizing the entire vacuum chamber, so that it is possible to shorten the cycle time.
(6) When, after having put the container into the chamber for the container, the chamber for the
container has been vacuumized from atmospheric pressure and has reached a predetermined
vacuum pressure, the communication between the chamber for the container and the chamber
for protection having a lower vacuum pressure than the chamber for the container is
established. Thereby, it is possible to lower the vacuum pressure in the chamber for the
container. In other words, since the chamber for protection functions as a vacuum buffer,
accordingly it is possible to shorten the time period required for vacuumizing the chamber for
the container, so that it is possible to shorten the cycle time.
(8835805_1):SPM
(7) By raising and lowering a plurality of containers between the chamber for the container and
the chamber for protection, it is possible to supply this plurality of unprocessed containers from
the chamber for the container to the chamber for protection all at the same time and to perform
film formation processing upon this plurality of containers simultaneously. Moreover, once they
have been processed, it is also possible to take out the plurality of containers processed from the
chamber for protection and transfer them to the chamber for the container.
BRIEF DESCRIPTION OF DRAWINGS
[0027a]
Preferred embodiments of the invention will be described hereinafter, by way of examples only,
with reference to the accompanying drawings, wherein:
Fig. 1 is a schematic sectional view showing the overall structure of an apparatus for forming
thin film (a thin film formation apparatus) according to the present invention;
Fig. 2 is a side sectional view of the film formation apparatus shown in Fig. 1;
Fig. 3 is a schematic sectional view showing the overall structure of a thin film formation
apparatus according to a second embodiment of the present invention;
Fig. 4 is a side sectional view of the film formation apparatus shown in Fig. 3;
Fig. 5 is a schematic sectional view showing a PET bottle and a line for a heat generating
element inserted into that PET bottle;
Fig. 6 is a schematic figure showing a container and a heat generating element; and
Fig. 7 is a graph showing the relationship between: the distance between the heat generating
element and the inner surface of the container; and the relative shifting speed of the heat
generating element and the container.
(8835805_1):SPM
DESCRIPTION OF EMBODIMENTS
In the following, embodiments of the apparatus for forming thin film (the thin film
formation apparatus) according to the present invention will be explained with reference to Figs.
1 through 7. It should be understood that, in Figs. 1 through 7, the same reference symbols are
appended to structural elements that are the same or equivalent, and duplicated explanation will
be omitted.
Figs. 1 and 2 are figures showing a first embodiment of the thin film formation apparatus
according to the present invention.
Fig. 1 is a schematic sectional view showing the overall structure of the thin film
formation apparatus according to a first embodiment of the present invention. And Fig. 2 is a
side sectional view of the film formation apparatus shown in Fig. 1. As shown in Figs. 1 and 2,
the thin film formation apparatus of the present invention has a structure in which a vacuum
chamber is divided into two parts: a film deposition chamber 1, and a heat generating element
protection chamber 2. The film deposition chamber 1 is disposed above, while the heat
generating element protection chamber 2 is disposed below. The volume of the film deposition
chamber 1 is set to be less than the volume of the heat generating element protection chamber 2.
The film deposition chamber 1 and the heat generating element protection chamber 2 are linked
via a gate valve 3, which serves as a vacuum isolation device. The film deposition chamber 1 is
linked via a link portion 1a to a vacuum pump (not shown in the drawings) that serves as a
vacuum evacuation device, so that the interior of the film deposition chamber 1 can be
vacuumized by this vacuum pump. Moreover, the film deposition chamber 1 comprises a door
or shutter (not shown in the drawings) that opens and closes for taking out a PET bottle 4 from
the film deposition chamber 1, or for inserting a PET bottle 4 thereinto. A bottle holding portion
11 is installed in the film deposition chamber 1, the bottle holding portion 11 holding the PET
bottle 4 in an inverted state.
Moreover, the heat generating element protection chamber 2 is linked via a link portion
2a to a vacuum pump (not shown in the drawings) that serves as a vacuum evacuation devcie, so
that the interior of the heat generating element protection chamber 2 can be vacuumized by this
vacuum pump. In this embodiment, each of the film deposition chamber 1 and the heat
(8835805_1):SPM
generating element protection chamber 2 is linked to an individual vacuum pump. The capacity
of the vacuum pump on the the film deposition chamber 1 side is smaller than the capacity of
the vacuum pump on the the heat generating element protection chamber 2 side. A heat
generating element unit 22 comprising a heat generating element 21 that is electrically
connected to a power supply (not shown in the drawings), and an electrically operated cylinder
for raising and lowering heat generating element unit 23 that raises and lowers the heat
generating element unit 22 are disposed within the heat generating element protection chamber
2. Although this feature is not shown in the figure, it should be understood that a portion of the
heat generating element 21 consists of a rod shaped component made from copper that can be
inserted into the interior of the PET bottle 4 and removed therefrom, so that heat is not applied
substantively when the heat generating element applies heat. The electrically operated cylinder
for raising and lowering heat generating element unit 23 is configured so as to vary with a speed
controller, the rising/lowering speed of raising or lowering the heat generating element unit 22.
This electrically operated cylinder for raising and lowering heat generating element unit 23
constitutes a relative shifting device that shifts the PET bottle 4 and the heat generating element
21 relatively to each other, and relatively shifts the PET bottle 4 and the heat generating element
21 so as to make the portion of the PET bottle 4 upon which a film is to be formed and the heat
generating element 21 face each other. It should be understood that, in Figs. 1 and 2, the heat
generating element 21 is shown in its elevated state.
In the film formation apparatus having a structure like that shown in Figs. 1 and 2, the
interior of the heat generating element protection chamber 2 is always kept in a vacuum state, so
that the heat generating element 21 existing in the heat generating element protection chamber 2
is always kept in a vacuum state. At this moment, the gate valve 3 is in the closed state, so that
communication between the heat generating element protection chamber 2 and the film
deposition chamber 1 is intercepted.
After the PET bottle 4 has been put into the film deposition chamber 1 and the PET
bottle 4 has been set up on the bottle holding portion 11, the vacuumization of the interior of the
film deposition chamber 1 starts. And, when the pressure in the interior of the film deposition
chamber 1 has reached a predetermined vacuum pressure which is higher than the vacuum
pressure within the heat generating element protection chamber 2, then the gate valve 3 is
(8835805_1):SPM
opened to establish the communication between the film deposition chamber 1 and the heat
generating element protection chamber 2. Due to this, the vacuum pressure within the film
deposition chamber 1 decreases and becomes equal to the vacuum pressure within the heat
generating element protection chamber 2. Accordingly, it is possible to shorten the time period
required for vacuumizing the film deposition chamber 1. And electrical power is supplied from
a power supply not illustrated to the heat generating element unit 22, so that the heat generating
element 21 produces heat. And, by operating the electrically operated cylinder for raising or
lowering heat generating element unit 23, the heat generating element unit 22 is raised or
lowered at a predetermined speed,
(8835805_1):SPM
generating
so that the heat element 2t and the gas supply
conduit 25 are inserted into
or taken out from the PET bottle
4. fn
the meantime, the interior of the film deposition
chamber 1 reaches a vacuum pressure at which
film formation
is possible, and, with
along supplyinq raw material gas from
the supply conduit 25 to the interj-or
of the PET bottle 4,
also electrical current
is flowed to the heat generating
element 21.
Due to this, the heat generating el-ement 2I
reaches
a high temperature, and the heat generating
element
2I becomes a heat catallystic
element. The raw material gas
that is blown gas
out from the supply conduit 25
comes into
contact with t.he heat generating
element 2t that has become
the heat catalytic element,
and is decomposed into chemical
species
by a catalytic chemical reaction and/or
thermaJ_Iy.
These chemical- species reach inner
the surface of the
bottle 4 so as to form
a thin film upon the inner
surface of
the PET bottle 4.
t00331
According to the present
invention, by providing
structure possible
that makes it to adjust
the rising and
lowering speed at which the heat generating
element unit 22
is raised and lowered, it is possible
to adjust the time
period
during which
the firm is formed over each portion
container according to the shape
of the container, the
heat resistance characteristics
of the container,
and the
required performance
for the container, and it
becomes simpre
and easy
to adjust the barrier performance
and ext.ernal-
appearance of the container.
These features will-
be expl-ained
in detail hereinafter.
t0034 l
when a thin film predetermined
of a thickness
has been
formed on
the inner surface of
the bottle 4, which
means
that the film formation process
has been completed,
then the
generating
heat
element unit 22 1s lowered,
and the heat
generating
e]ement 2r is returned
to the interior of
the heat
generating protection
element
chamber 2. Then the gate
varve
3 is
closed, so that the
communication between
the firm
deposition chamber
1 and the heat generating
element
protection
chamber 2 is intercepted.
Thereafter,
the interror
of the firm deposition
chamber 1 is
returned t.o atmospheric
pressure,
and, after the processed
bottle
4 whose
processing
been completed has
been taken out from
film pET
deposition chamber
r, the next bottr-e put
4 is into
the firm deposition
chamber L, which is
then vacuumized
that the film formation is executed. During the processes
described above, the heat generating
element 21 is always
kept in the vacuum state. Thereafter, the processes
described
above are repeated.
t003sl
Next, a second embodiment
of the thin film formation
apparatus present
according to the invention will_
explained with reference to Figs. 3 through
Fig. 3 is a schematic sectional
view showing the overall
structure of the
thin film formation apparatus according
the second embodiment of the present invention.
And Fig. 4 is
a side sectional- view of the film
formation apparatus shown
in Fig. 3. As shown in
Figs. 3 and 4, the thin film formation
present
apparatus of the invention comprises
two chambers
within a device frame F: a film
deposition dedicated chamber
31, and a bottle
inlout chamber 32. The film deposition
dedlcated chamber 31 is disposed below, while
the bottl_e
inlout chamber 32 is
disposed above. The film deposition
dedicated
chamber 31 and the bottle lnlout
chamber 32 are
gate
connected via a val-ve 33, which
serves as a vacuum
isolation device.
t00361
film deposition dedicated
chamber 31 is ]inked via
portion
link 31a to a vacuum pump
Vp1, which serves
as a
vacuum evacuation
devcie, so that the interior
of the film
deposition
dedicated chamber 31 can be vacuumized
by the
vacuum pump prurality
VP1. A of heat generating
element
units
44 comprising heat generating
elements 42
are disposed within
the film
deposition dedicated chamber
31. Electrical power
supplied from a power
supply not illustrated to the
heat
generating
element
units 44, and as a result
the heat
generating
erements 42 are caused produce
to heat.
Each of
generating
the heat erements
42 is inserted
into one of a
prurarity
of PET
bottles 4 being
held in the inverted state.
order to heat the heat generating
erements 42,
an AC or Dc
power
supply can be employed,
the poser supply providing
r L^^f *-
eas.i I v el er:f ri end hai nn nhaa^o- f l.rrn
uqrrrJ srsvLr rUq!
^- tICctL_LLt9, arru vsrrtV
urrCCp€I tnan a
combi-nation of
a high freguency power
suppty and an
impedance
matching
device, which woul-d
be used in a plasma
cVD method.
rn this embodiment generating
elght heat
element units
44 are
providedr
so that it becomes possible
to perform
firm
formation processing
upon a totar
of eight bottres
within
the film deposition
dedicated chamber
31 at the
same
trme.
0037
Furthermore, the bottle inlout chamber 32 is
linked via
a l-ink portion 32a to a vacuum pump
VP2, which serves as a
vacuum evacuation
devcie, so that the interior of the bottl_e
inlout chamber 32 can be vacuumized by the vacuum pump
Vp2.
Two sets of bottle rising/lowering
devices 51, each of which
raises and lowers a plurality of PET
bottl,es 4 while holding
them, are instarred within
the bottre inlout chamber 32.
Each
these bottle rising/lowering devices
51 is configured so
as to be capable
of raising and lowering four
bottles 4
a=nh l.rnr-r-nla
While hOldincr i-hom Tcrohrr pOttOIe riqina/1ar;ari
wrrrlE rrvrurlty
urrsrr!. rE!svy, ea(.)Il
, *-,,---ng
devices is capable of lowering four
PET bottles 4 into the
rirm rlanncif icn
dedicated vvurvq9su chamber vrrqllrvg! holdinn fhern
31 Jl whi]e wIlfIE rrvrvfllg LIlElil., ctlLLl
al-so capable of
taking out the four PET bottl-es 4
from the
film
deposition dedicated chamber
31 and bringing them into
the bottle inlout chamber
32. The bottole rising/lowering
device 51 is
configured t.o be capable of varying
rising/rowering
speed at which the
bottofes 4 are raised
or lowered between the
film deposition dedicated
chamber 31
and the bottle
inlout chamber 32. The
bottl-e rising/rowering
device 51 constitutes a rerative
shifting device that makes
the PET bottle 4 and the heat generating
element 42
shift
rerativery to each
otherr so that the bottl-e
rising/lowering
device 51 shifts the PET bottres
4 and the heat. generating
e]ements 42 relatively
so as to make the portion
of each
bottle upon which
a film is to be formed face
the heat
j-ng
generat erement
42 corresponding to
t.he erement 42.
Rising/lowering
mechanism portion
of each bottle
rising/lowering
device 51 may
be instal-l-ed at the interior
the chamber, or may
be installed at the
exterior of the
chamber. rn a case that the rising/rowering
mechanism portion
is instal]ed at the
exterior of the chamber, portion
only the
for holding
the PET bottles 4
exsits at the interior
of the
chamber,
and this port.ion
is raised and lowered
by the
rising/lowering
mechanism portion instal-red
at the exterior
of the
chamber.
0038
An open/cl-ose gate provided
56 is
at the upper end of
t.he bottle inlout
chamber 32, and,
by closing this open/close
gate 56, possibre
it is to put
the interior of the
bottle
suppry/remove
chamber
32 into an airtight
stater so that the
bottol-e supply/remove
chamber 32
can be vacuumized by
vacuum pump
VP2. And, by
opening this open/crose gate
56, 1t
possible pET
is put
to unprocessed
bottles 4 into the
j-nterior
of the bottle inlout chamber 32, or to take out
processed PET bottles 4 from the bottle inlout chamber 32.
t00391
inversion inverts PET
Next, dD device 57 that the
bottles 4 and a bottl-e handling device 60 that inserts the
inverted PET bottles 4 into the bottle inlout chamber 32 and
processed
al-so takes out the PET bottles 4 from the bottle
in/out chamber 32 wj-l-l be explained. The inversion device 51
and the botole handling device 60 constitute a bottle
transfer device.
As shown in Fig. 4, a conveyer 10 that conveys PET
bottles 4 in the upright state is install-ed within the device
frame F. A screw 71 for pitch regulation is disposed in
parallel 70
with the conveyer for making a space between the
pet bottles 4 at a certain regulated pitch, thus defining
fixed intervals between the PET bottles upon the conveyer
70. Moreover, the inversion device 51 for invert.ing the PET
bottl-es 4 is installed in contiguity with the conveyer 70.
100401
plurality
The inversion device 51 comprises a of chucks
58 that catch the body portions of the PET bottles 4. The
inversion device is configured so as to catch and invert
qQ j
r.ri t-h {-ha nl rrrq r- ha n'l rrr2l ptrT
f rz nf
l i trz of r:hrrr:ks hottleS
4 that have been spaced by the screw 7l- at regulated
hit-^l-r rrhnh t-ha 1n Mnranrrar 1-ha
!rv!vvvv!, inVefSiOn deViCe 51
^Ah\r6\rar
plurality
is configured so as to catch and invert the of PET
bottles 4 in the inverted state with the plurality of chucks
58, and return the pet bottles 4 Ln the
upright state to the
conveyer 10. In
this embodiment, the inversion device 57 is
made to be capable of inverting eight PET bottles 4
simultaneously.
t00411
As shown in Figs. 3 and 4,
the bottle handling device 60
is installed position
upon the device frame F in a above the
bottl-e inlout chamber 32 and the conveyer 70. Thj-s
bottle
h:nd I 'i nn Aa.ri n5 y
6n nn.|- 6rnl rr hri nnq J- ha nl rrr: l 1' a€
(JII_Ly
rrqrrullrrV \,asVIUE \JV tt\JL
v!ftrVJ UtrE UI
}JrL.lfdIJ_Ly
unprocessed
PET bott1es 4 into the interior of the
bottl-e
inlout chamber 32 in the inverted state,
but also takes out
from the bottle inlout chamber 32, plurality processed
the of
PET bottles 4 that
are being held in the inverted state
within
the bottle inlout chamber 32 by the
bottle
rising/lowering device 51. In
this embodiment, the bottle
handling device 60
is capable of handling eight bottles
simul-taneously.
100421
bottle handling device 60 comprises
rising/lowering shaft 63,
and a suction head 64 that suctions
the bottom portions
of the PET bottles 4 is provided at the
lower end of the
rising/lowering shaft 63. The bottle
hanrj I i no derri gg
so qe f o
60 is conf vvrr!!yu!vv iorrred he rer:i nror-ef i nr^rl rz
ev uv vs !Evrl/!vuoLtIIvry
shiftable by a reciprocating
shift mechanism 62 between
position
above the bottle inlout position
chamber 32 and a
above the inversion
device 51. Accordingly, the bottle
handling device 60 can lower the
rising/Iowering shaft 63 to
suction, with
the suction head 64, a pluralit.y
of unprocessed
PET bottles 4 in the i-nverted
state that are at the position
of the inversion device 5J,
and can then raise the
rising/Iowering
shaft 63. After that, the bottle
handling
device 60 shifts to the position above
the bottle inlout
chamber 32 by the reciprocating
shift mechanism 62. After
that, the bottle handling device 60 l-owers the
rising/lowering
shaft 63 to put the plurality
of bottles
4 into the bottle inlout chamber
32. Moreover, the bottle
handling device 60 can 1ower
the rising/lowering shaft 63
suction, with
the suction head 64, a plurality processed
PET bottles 4 in the inverted state
that are in the interror
of the bottle inlout
chamber 32, and can raise the
rising/lowering shaf t 63 . Af ter that,
the bott.l-e handling
device 60 shift.s position
to the above the inversion
device
by the reciprocating shift mechanism 62. After
that, the
bottole handling device 60 can l-ower
the rising/lowering
shaft 63 to return the plurality
of PET bottles 4
to the
i-nversion device
51 .
t00431
In the film formation apparatus
having a structure
shown in Figs.
3 and 4, the interior of the firm
deposition
dedicated
chamber 31 is always kept
in the vacuum state
the operation of the vacuum pump
Vp1, so that
the heat
oeneratino e'l
ino in the film
emenLS 42 eXiSf vz]+r u!rry !ll Lrlg denosif inn
! Mtr vEyvoI uJvtl
dedicated chamber 31, are
arways kept in the vacuum
state. At
this moment, gate
the valve 33 is kept
in the c]osed state,
so that
the communicatlon between
the film deposition
dedicated chamber 3L
and the bottle inlout chamber
32 is
infereenfecj The
- 4 heino r-nnqcr-r'r Iirrolrz r.nnrrorzed
PET bottles vvL ureu : vErrry
vvrrJEUuLf vE-Ly 9\.,rllvgyELr
in the
upright state by the
conveyer fO, are spaced
by the
screw 11 for pitch reguration.
Thereby, fixed gaps
are made
between adjacent
ones of these
bottl-es 4 at the regulated
pitch. The plurarity
of bottles
4 having the fixed gaps
of the regulated pitch are inverted by the inversion device 57, so that they come to be in the
inverted state. Then the plurality of PET bottles 4, now in the inverted state, are suctioned by the
suction head 64 of the bottle handling device 60. At this time, the open/close gate 56 of the
bottle in/out chamber 32 is opened. The bottle handling device 60 transfers a plurality of
unprocessed PET bottles 4 and puts them into the bottle in/out chamber 32. In this embodiment,
it is possible for the bottle handling device 60 to put eight of the PET bottles 4 into the bottle
in/out chamber 32 simultaneously. When the plurality of PET bottles 4 put into the interior of
the bottle in/out chamber 32 gets held by the bottle rising/lowering device 51, the open/close
gate 56 is closed. And, the vacuum pump VP2 is operated to start vacuumization of the interior
of the bottle in/out chamber 32 starts.
When due to the operation of the vacuum pump VP2 the vacuum pressure within the
bottle in/out chamber 32 reaches a predetermined vacuum pressure, which is still higher than the
vacuum pressure of the interior of the film deposition dedicated chamber 31, the gate valve 33 is
opened to establish the communication between the film deposition dedicated chamber 31 and
the bottle in/out chamber 32. Due to this, the vacuum pressure of the interior of the bottle in/out
chamber 32 decreases, and becomes equivalent to the vacuum pressure of the interior of the film
deposition dedicated chamber 31. Accordingly, it is possible to shorten the time period required
for vacuumization of the bottle in/out chamber 32. Subsequently, the bottle rising/lowering
device 51 within the bottle in/out chamber 32 is operated to supply the plurality of unprocessed
PET bottles 4 into the interior of the film deposition dedicated chamber 31. These plurality of
PET bottles 4 supplied into the interior of the film deposition dedicated chamber 31 are being
held by the bottle rising/lowering device 51. The PET bottles 4 are raised and lowered at a speed
that has been determined in advance while being held by the bottle rising/lowering device 51.
Thereby, the heat generating elements 42 are inserted into, and taken out from, the PET bottles 4
respectively.
Fig. 5 is a schematic sectional view showing one of the PET bottles 4 with one of the
heat generating elements 42 that has been inserted into the interior of that PET bottle 4.
(8835805_1):SPM
Fig. 5, the state of the pet bottole
4 is shown in which,
due to rising and lowering
by the bottle rising/lowering
device 51, the heat generating el-ement
42 of the heat
generating
element unit 44 gas
and a supply conduit 43 have
been inserted into
the PET bottl-e 4. rt should
be understood
that
the bottle rising/lowering device
51 is omitted from
1- hi e f i nrrra f)rrri na l-ha el.rnyg
qllu
uvv v v deSCf vsJ9! MU ibed inSeftiOn III9g! UJVII taki no-
and LqArrry
out process, pressure
the in the interior of the
fllm
deposition dedicated chamber 31 pressure
reaches a vacuum
which film formation possible,
is and, along with
materiar gas
being suppried to the interior
of the bottle
4 gas
from the supply conduit 43,
arso electrical- current is
flowed to the heat generating
element 42. Due to this,
heat generating
element 42 reaches
a high temperature,
the heat generat.ing el-ement
becomes a heat catalystic
element.
The raw material gas
blown out from the gas
supply conduit 43
comes into contact with the heat generating
element 42
that
has become the heat catalystic
el_ement, and is
decomposed
into chemical-
species by a catalyt.ic
chemical- reaction and/or
thermarry.
These chemicar species
reach the inner surface
the PET bottle 4, and form
a thin film on the inner
surface
of the PET bottle 4.
t00461
According to the present
invention, by providing
structure that makes possible
it to adjust
rising/lowering pET
speed for raislng and
lowering the
bottles possible
4t it is
to adjust the time periods
f *^ F.i r
^-*.i
rvt.rrrrrrg !r-Lr.uD on varrous portions
- of a contaj-ner
accordinq to
qh:no
l-ha harl- r^d.i
f he nf i-ho nnnl- r i nor
LrlE rrccru
.r_ccrStdflCe
characteristics of the
container, and the required
performance
for the
container; and thereby
it becomes simple
and easy
to adjust the barrier performance
and external
appearance
of the container.
This feature of the present
invention will be further
described l_ater.
t00471
After
a thin firm having predetermined
a thickness
been pET
formed upon the inner
surfaces of
the bottres 4,
operation of film
formation has been
compreted. Next,
processed
PET bottres 4
have been taken out from
the film
deposition dedicated
chamber 31 by
the bottle rising/rowering
device
51 to be returned
to the bottle inlout
chamber 32.
arf a r'- r-'^ 'l
Af ,- ar .- ha.- ,- ha
n! LE! urrqL, LlrE
ycruE vdrve JJ 33 is rs Srrhseorrcnf rr_
cl_osed. t-roseq
vacuum (not
rel-ief val-ve
shown in the drawings)
instarled to
the bottle in/out
chamber 32 is operatedr
so that the
interior of the bottle inlout chamber 32 is opened to
atmosnhere- At fhis moment.
the interior of the film
formation dedecated chamber 31 is always kept in the vacuum
stater so that the heat generating elements 42 existing in
film
the deposition dedicated chamber 31, are always held in
the vacuum state. And next, the open/cl-ose gate 56 is opened,
and the PET bottles 4 within the bottle in/out chamber 32 are
taken out and are returned to the inversion device 57 by the
bottle handling device 60. And the bottle handling
device 60
suncktions plurality
a of new unprocessed PET bottl-es 4, and
brings them into the bottle inlout chamber 32. After these
new PET bottles 4 have been brought into the bottle inlout
nh ?) i-ha nrnnaq f nr crlnh l rri nn t-hagg
=ml-rar ust/yrl rrlY Lrrv PET bOttleS 4
into the film deposition dedicated chamber 31 and process
of fil-n formation upon
the PET bottles 4, whi-ch have been
above mentioned, are repeated.
t00481
AIthough, wi-th the film formation
apparatus shown in
Figs.
3 through 5, an example is shown of a case in which
film formation processing is performed plurality
upon a of
PET bottles 4 in inverted
the state, it would also be
acceptable perform
to arrange to film formation processing
plurality
upon a of PET bottl-es 4 in the upright state.
this case, a structure would
be adopted in which the fil-m
deposition
dedicated chamber 31 is arranged above while the
bottle inlout
chamber 32 is arranged below, and in which
generating
heat element 42 extends from the plate portion
of the film deposition
dedicated chamber 1 downward, and
open/close gate
of the bottl-e inlout chamber 32 is
install-ed
at the lower end portion of the bottle in/out
chamber 32. The
inversion device would
51 be omitted. Moreover, the bottl_e
handling
device 60 would be configured so
as to hold a
plurality
of unprocessed PET bottles 4
in the upright state
upon the conveyer and put
to these PET bottles lnto the
bott]e inlout
chamber 32, and to hold and return
to the
plurality
conveyer a of processed
PET bott1es 4 existing in
the bottle inlout chamber
t00491
As wirl be crear from the above
explanation of the first
embodiment and the
second embodlment of the present
invent.ion,
in present
the invention, it is
arranged to shift the
container and the generating
heat el-ement rel-atively
to each
other
after the vacuum chamber has been
c]osed and
vacuumi-zation thereof has
started, and moreover the
relative
chifr-inn enaarl
orr!! LrrrV DyEEut Of the LlIe U(JII Cgntainer LdIIleI' dIIq and the LIIe heat Il-- oenerafinr
-*..J
efement can be varied.
The reasons for this are explained
bel-ow.
The heat generating
el-ement CVD method that is the
subject of present
the invention has the following
characteristics.
/T\ Tho nlnqor
+ generatinq
the container is to the urrv heat rrv
alamant- i-ha
hioher is fhe
srsrrlsrrur Lrrc 1.r:.rvr snce|_ :n6 mr
film IJ_J-IIt fOfmatiOn IOfmatlOn vrrvvs, *.,*,,.JfeOVef
the greater is
the thermal- Ioad upon the container.
Normally 1 to 10 centimeters is
taken as being a suitable
pasca]s
distance applicable for
firm formation at a few
under
vacuum
conditions.
As a resul-t., when forming a film upon
three dimensional_
(and
container, the film thickness quality)
the film of the
film that formed
is at each location upon the three
dimensiona1 container, and the thermal
load, are determined
.ina
rnnnrd l-^ r-he
creneral-ino
diStanCe betWeen vvLyyuurr the urrv heat- rtsqL y9rrE!qLItty element E
and the container, and the time period which
over heat is
:nn l i aA l-rrr l-1.ra
l.ra=.|- nn o l amon1-
aIJPf rE\r r,/y LIIE lIEcrL rrV
s!srrrEtrL.
^ahdr3f 9eIIC!ctLf
The film
thickness and the film quality determine
performance
barrier and the coloration
at each l-ocation, and
the thermal Ioad determines whether or not
thermal-
deformation takes pl-ace. If
the thermal deformation takes
pIace, generally
this three dimensional- container wiII
fose
its commercial- val-ue.
Wifh resnect danendino
r tO a three dimenSiOnal_
\ / Conf:inor- vvrruqrrrE! uEygrrutttv
rrn^n it- c in1- ondad h11r^nc6
aq r^ral I aq nrofgg3[]_e
qe qu
baffief
lJle
performance
of the container as a whole, a preferable
distribution of firm preferab]e
thickness and a distribution
coloration have been known. Moreover, depending
upon the
shape of t.he container, there
are some locations at which the
fil-m formation
speed wirl increase or decrease,
and moreover
there are some locations at which
the thermal- l-oad is likerv
to become greater
or smaller.
00s0
For the film format.lon apparatus prior
of the art, a
method of film formation has
been employed in which
positions
of the heat generating
element and the
container
are fixed.
However, in such method,
it is difficurt to make
adjustments between different
l-ocations where to form
firm according to purpose
the intended of
the container and
its shape,
by varying t.he distance
between the heat
generating
element
and the container.
00s1
According to the present
invention, by employing a
structure in which performed
the film formation is whil_e
shift.ing the heat generating element
and t.he three
dimensional- container relatively
to each other, and also by
configureing
the relative shifting speed means so as to
provide
variable rel-ative
shifting speed, it becomes possible
rn nar€nrm €i l_m
na 1-n t- hp
i nl- ended nrrr
Lv rrtll.l formation I(JIIttdLI(.)II dL,-* 3r-nardi
1;sr!vlrrr
F*-.'pOSe
of the vellesl and it.s
shape, while minutely adjusting
conditions of film
formation in a relati-ve manner with
respect to different film formation
l-ocations. As to this
nain{- 1- l'ra
urvrr will, vv!J! v9 be described v99v! lvEu in ItM!g!grtug reference to Fios-
^-nlanation uv L Jyo .
6 and 7.
Fig. 6 is a schematic figure showing
a contalner and a
heat generating element. graph
And Fig. 7 is a showing the
relationship
between the distance between: the heat
--+; -^ grclTteot
yE*E!qLrrry and the inner
surface of the container;
and the relative
shifting speed with respect to the heat
olement
qrrv he nrer:ise. en
L and the urlv container. vvrlLqrrrE!. To ME y!gvf
Jg, At_
^6n6r:t.inn
example is expJ-ained in which the formation
speed for forming
a thin film of the proportional
same substance is to the
distance between the heat generating
element and the inner
surface of the container. The
contour of a three dimensional
(shown
container
by a solid line) and a heat generating
passing position
el-ement along which the heat generating
passes (shown
element by
a dotted line) are shown in Fig. 6.
As shown in Fig.
6, when the axial- distance along the
contai-ner from its portion
mouth toward its bottom portion
set as the X axis, and the radial- direction
extending from
the axial- center of the
container to the inner surface of
container is set as the Y axis, the heat generating
element
passing
position coincides with
the axial- direction of the
(i.e.
container
with the X axis). When plotted is
distance between the heat generating
element and the inner
(the
surface of the container
Y axj-s) to the distance
from
portion (x=0)
the mouth of the container
to the bottom
portion (x=100),
of the container
the resul_t is shown bv a
thin solid line
in Fiq. 1. As shown in the figure,
distance
between the heat generating element
and the inner
surface of the container varies.
And the rel-ative shifting
speed with rewpect to the heat generating
element and the
container is varied
accordi-ng to the variation
of the above
mentioned distance, as shown by a
thick solid line in Fig. i.
In other words, the
rel-ative shifting speed is made
fast at
qeneratinq
l-ocations where the distance between the
heat
el-ement and the inner surface of
the container is smal-I,
whereas the relative shifting speed is made sl-ow at locatlons
where the distance between heat generating
the eJ-ement and
the inner surface of the great.
container is The means for
implementing
this variabl-e speed shifting may, for example
qar\rar qJ-
1 \ : mnl- nr a\r : orrn i nn mnl- nr.
rllv 9v!
indar anrrinnad
2\ An air 6.yl in eneed
4 With an el-egtrnm:rrnaf u! vrrrs\rrre Lrv
t ol:,r
controller;
3) a mechanical means cam and a
cam foll-ower) or the like.
00s2
providing
By a structure such as that described above,
possible
it is to anticipate advantageous effects
such as
those described below.
(1) ior narfnrmrnnp (nrerrenf
+ F,nhanr:ement inn
of the baff v
\ / \y!v of
thermal deformation of the container)
T1- hanamoq n^qcil-r'la l-a na-fC1m
film fOfmatiOn !v!rLLq9rvrr OVer OnIv
vv9! vrr!) a
qhnrJ-
1-ima
period
sv at lOcatj_ons
vv!fvg where time for film
^o':i_od
formation
sirould be limited from the point of view
of thermal-
deformation, wihle with respect
to the other locations, it is
possible perform
to film formation to a sufficient extent,
i+ l-.annm6q qimnlo
thaf ae 2 16crr1f :nrl oia\/ ]-n anhan^a fl.ra
- qJ q gIIIIAII\-e:
urrqut !eJUfL, fL J.rEU\,/LttEo o!Ittyrg OrlU sqJy
LV LIIe:
performance
barrier of the
entire container.
Coloration
adjustment
Formation of a film thickness
distribution according to the
intended purpose of the container
and the required external
appearance and quality
for the container becomes simple
easy. And
moreover it becomes possible to implement
coloration havj-ng graduations or
the like.
/ ? \ E'nh:naomall
prOdUCtiVitV
\v/ the
unt1l now,
as a countermeasure to prevent
thermar deformation
of the container, it has practiced
been to start film
formation generating
after the heat element
has been
perfectly
inserted. By
contrast, according to the present
invention, it becomes possible
to reduce the
cycle time,
since
film formation can be started
from the stage of
inserting the heat generating
erement into the
container.
0053
while
various embodiments of the present
invention have
been
exprained above, the present
invention is not
limited to
the embodiments
described above of course,
i would be
possible to
implement various other
embodiments of the
present
invention, within
the scope of its technical-
concept.
INDUSTRIAL APPLICABILITY
The present invention can be applied to a film formation apparatus that forms a thin film
whose gas barrier performance is high, such as a DLC (Diamond Like Carbon) film, an SiOx
film, an SiOC film, an SiOCN film, an SiNx film, an ALOx film, or the like, upon either the
inner surface or the outer surface, or both, of a container such as a Polyethylen terephthalate
bottle (a PET bottle) or the like.
REFERENCE SIGNS LIST
1: film deposition dedicated chamber
1a: link portion
2: heat generating element protection chamber
2a: link portion
3: gate valve
4: PET bottle
11: bottle holding portion
21: heat generating element
22: heat generating element unit
23: electrically operated cylinder for raising and lowering heat generating element unit
: gas supply conduit
31: film deposition dedicated chamber
31a, 32a: link portions
32: bottle in/out chamber
33: gate valve
42: heat generating element
43: gas supply conduit
44: heat generating element unit
51: bottle raising/lowering device
56: open/close gate
57: inversion device
58: chuck
AH26(9770010_1):SPM
60: bottle handling device
62: reciprocating shift mechanism
63: rising/lowering shaft
64: suction head
70: conveyer
71: screw
72: vacuumized
73: heat generating element passing position
74: contour of three dimensional container
75: relative shifting speed
76: distance between heat generating element and inner surface of container
F: device frame
VP1, VP2: vacuum pumps
AH26(9770010_1):SPM
Claims (15)
1. An apparatus for forming thin film comprising: a vacuum chamber in which film formation upon a surface of a container is performed in a vacuum state by using a heat generating element; an vacuum evacuation device that vacuumizes said vacuum chamber; and a relative shifting device that, after vacuumization of said vacuum chamber has started, shifts the container and the heat generating element relatively to each other within said vacuum chamber, wherein said vacuum chamber is divided into a chamber for the container where the container is inserted and taken out, and a chamber for protection of the heat generating element where the heat generating element is held in a vacuum state, and a vacuum isolation device is provided between said chamber for the container and said chamber for protection.
2. The apparatus for forming thin film according to Claim 1, wherein each of said chamber for the container and said chamber for protection is linked to an individual vacuum evacuation device.
3. The apparatus for forming thin film according to Claim 1, wherein said chamber for the container is vacuumized from atmospheric pressure to be brought to a vacuum state at a moment of film formation upon the container, and is returned to atmospheric pressure after the film formation has been completed.
4. The apparatus for forming thin film according to Claim 3, wherein while said chamber for the container is returned to atmospheric pressure after the film formation being completed, said chamber for protection is kept in a vacuum state by closing said vacuum isolation device.
5. The apparatus for forming thin film according to Claim 4, wherein said vacuum isolation device is opened when said chamber for the container has been vacuumized, so as to communicate together said chamber for the container and said chamber for protection. (8835805_1):SPM
6. The apparatus for forming thin film according to any one of claims 1 to 5, wherein said chamber for the container is provided as a chamber for film formation where the film formation is performed upon the container, due to said relative shifting device which is provided to shift the heat generating element between said chamber for protection and said chamber for the container.
7. The apparatus for forming thin film according to Claim 6, wherein the heat generating element is inserted into said chamber for the container after said vacuum isolation device has been opened, and is returned to said chamber for protection after the film formation has been completed.
8. The apparatus for forming thin film according to claim 7, wherein, after the film formation has been completed and after the heat generating element has been returned to said chamber for protection, said vacuum isolation device is closed.
9. The apparatus for forming thin film according to any one of claims 1 to 5, wherein said chamber for protection is provided as a chamber for film formation where the film formation is performed upon the container, due to said relative shifting device which is provided to shift the container between said chamber for the container and said chamber for protection.
10. The apparatus for forming thin film according to Claim 9, wherein the container is inserted into said chamber for protection after said vacuum isolation device has been opened, and is returned to said chamber for the container after the film formation has been completed.
11. The apparatus for forming thin film according to Claim 10, wherein, after the film formation has been completed and after the container has been returned to said chamber for the container, said vacuum isolation device is closed.
12. The apparatus for forming thin film according to any one of Claims 1 to 11, wherein said chamber for the container comprises an open/close gate for taking out and inserting the container from and into said chamber for the container. (8835805_1):SPM
13. The apparatus for forming thin film according to any one of claims 1 to 12, further comprising a container transfer device that transfers an unprocessed container from a predetermined position into said chamber for the container, and transfers a processed container from said chamber for the container to a predetermined position.
14. The apparatus for forming thin film according to Claim 13, wherein the predetermined position is a position upon a conveyer.
15. A method of forming thin film by using an apparatus for forming thin film comprising: a vacuum chamber in which film formation upon a surface of a container is performed in a vacuum state by using a heat generating element, the vacuum chamber being divided into a chamber for the container where the container is inserted and taken out, and a chamber for protection of the heat generating element where the heat generating element is held in a vacuum state; and a vacuum isolation device which is provided between said chamber for the container and said chamber for protection, wherein the method comprises the steps of: inserting and taking out the container into and from said chamber for the container, while keeping a state of the heat generating element in a vacuum state by closing said vacuum isolation device when said chamber for protection is in the vacuum state; opening said vacuum isolation device when said chamber for the container has been vacuumized to communicate together said chamber for the container and said chamber for protection; and shifting the container and the heat generating element relatively to each other after said vacuum isolation device has been opened to form said thin film. Kirin Beer Kabushiki Kaisha By the Attorneys for the Applicant SPRUSON & FERGUSON Per: (8835805_1):SPM
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011284609 | 2011-12-27 | ||
JP2011-284609 | 2011-12-27 | ||
PCT/JP2012/083679 WO2013099960A1 (en) | 2011-12-27 | 2012-12-26 | Apparatus for forming thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
NZ626604A NZ626604A (en) | 2015-03-27 |
NZ626604B2 true NZ626604B2 (en) | 2015-06-30 |
Family
ID=
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