NO974454L - Process and apparatus for producing polycrystalline silicon and process for producing silicon plates for solar cells - Google Patents

Process and apparatus for producing polycrystalline silicon and process for producing silicon plates for solar cells

Info

Publication number
NO974454L
NO974454L NO974454A NO974454A NO974454L NO 974454 L NO974454 L NO 974454L NO 974454 A NO974454 A NO 974454A NO 974454 A NO974454 A NO 974454A NO 974454 L NO974454 L NO 974454L
Authority
NO
Norway
Prior art keywords
producing
silicon
solar cells
polycrystalline silicon
plates
Prior art date
Application number
NO974454A
Other languages
Norwegian (no)
Other versions
NO974454D0 (en
Inventor
Fukuo Aratani
Yoshiei Kato
Yasuhiko Sakaguchi
Noriyoshi Yuge
Hiroyuki Baba
Naomichi Nakamura
Kazuhiro Hanazawa
Original Assignee
Kawasaki Steel Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to PCT/JP1996/002965 priority Critical patent/WO1998016466A1/en
Priority to CA002211028A priority patent/CA2211028C/en
Priority to EP96933633A priority patent/EP0869102B1/en
Priority claimed from PCT/JP1996/002965 external-priority patent/WO1998016466A1/en
Application filed by Kawasaki Steel Co filed Critical Kawasaki Steel Co
Priority to NO974454A priority patent/NO974454L/en
Publication of NO974454D0 publication Critical patent/NO974454D0/en
Publication of NO974454L publication Critical patent/NO974454L/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
NO974454A 1996-10-14 1997-09-26 Process and apparatus for producing polycrystalline silicon and process for producing silicon plates for solar cells NO974454L (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
PCT/JP1996/002965 WO1998016466A1 (en) 1996-10-14 1996-10-14 Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell
CA002211028A CA2211028C (en) 1996-10-14 1996-10-14 Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell
EP96933633A EP0869102B1 (en) 1996-10-14 1996-10-14 Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell
NO974454A NO974454L (en) 1996-10-14 1997-09-26 Process and apparatus for producing polycrystalline silicon and process for producing silicon plates for solar cells

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PCT/JP1996/002965 WO1998016466A1 (en) 1996-10-14 1996-10-14 Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell
CA002211028A CA2211028C (en) 1996-10-14 1996-10-14 Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell
NO974454A NO974454L (en) 1996-10-14 1997-09-26 Process and apparatus for producing polycrystalline silicon and process for producing silicon plates for solar cells

Publications (2)

Publication Number Publication Date
NO974454D0 NO974454D0 (en) 1997-09-26
NO974454L true NO974454L (en) 1998-04-23

Family

ID=25679496

Family Applications (1)

Application Number Title Priority Date Filing Date
NO974454A NO974454L (en) 1996-10-14 1997-09-26 Process and apparatus for producing polycrystalline silicon and process for producing silicon plates for solar cells

Country Status (2)

Country Link
CA (1) CA2211028C (en)
NO (1) NO974454L (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100444410C (en) * 2006-05-08 2008-12-17 高文秀 P-type solar cell grade polycrystalline silicon preparing process
EP3359489A2 (en) 2015-10-09 2018-08-15 Milwaukee Silicon, LLC Devices and systems for purifying silicon

Also Published As

Publication number Publication date
CA2211028C (en) 2002-04-16
NO974454D0 (en) 1997-09-26
CA2211028A1 (en) 1998-04-14

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Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application