NO882045L - Halvleder med kapasitiv utlesing av ladningsbaererne og integrert likespenningstilfoersel. - Google Patents

Halvleder med kapasitiv utlesing av ladningsbaererne og integrert likespenningstilfoersel.

Info

Publication number
NO882045L
NO882045L NO882045A NO882045A NO882045L NO 882045 L NO882045 L NO 882045L NO 882045 A NO882045 A NO 882045A NO 882045 A NO882045 A NO 882045A NO 882045 L NO882045 L NO 882045L
Authority
NO
Norway
Prior art keywords
semiconductor
integrated
supply
charge carriers
capacitive readout
Prior art date
Application number
NO882045A
Other languages
English (en)
Other versions
NO882045D0 (no
Inventor
Josef Kemmer
Gerhard Lutz
Peter Holl
Lothar Strueder
Original Assignee
Messerschmitt Boelkow Blohm
Gerhard Lutz
Peter Holl
Lothar Strueder
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Messerschmitt Boelkow Blohm, Gerhard Lutz, Peter Holl, Lothar Strueder filed Critical Messerschmitt Boelkow Blohm
Publication of NO882045D0 publication Critical patent/NO882045D0/no
Publication of NO882045L publication Critical patent/NO882045L/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Memories (AREA)
NO882045A 1987-05-11 1988-05-10 Halvleder med kapasitiv utlesing av ladningsbaererne og integrert likespenningstilfoersel. NO882045L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19873715674 DE3715674A1 (de) 1987-05-11 1987-05-11 Halbleiter mit kapazitiver auslese der ladungstraeger und integrierter gleichspannungszufuehrung

Publications (2)

Publication Number Publication Date
NO882045D0 NO882045D0 (no) 1988-05-10
NO882045L true NO882045L (no) 1988-11-14

Family

ID=6327273

Family Applications (1)

Application Number Title Priority Date Filing Date
NO882045A NO882045L (no) 1987-05-11 1988-05-10 Halvleder med kapasitiv utlesing av ladningsbaererne og integrert likespenningstilfoersel.

Country Status (5)

Country Link
US (1) US4896201A (no)
EP (1) EP0295365B1 (no)
JP (1) JPH01220867A (no)
DE (2) DE3715674A1 (no)
NO (1) NO882045L (no)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252294A (en) * 1988-06-01 1993-10-12 Messerschmitt-Bolkow-Blohm Gmbh Micromechanical structure
DE4120443B4 (de) * 1991-05-07 2007-03-22 Kemmer, Josef, Dr. Halbleiterdetektor
DE4114821B4 (de) * 1991-05-07 2006-08-31 Kemmer, Josef, Dr. Halbleiterdetektor
JP3356816B2 (ja) * 1992-03-24 2002-12-16 セイコーインスツルメンツ株式会社 半導体光電気変換装置
US8169014B2 (en) * 2006-01-09 2012-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Interdigitated capacitive structure for an integrated circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676715A (en) * 1970-06-26 1972-07-11 Bell Telephone Labor Inc Semiconductor apparatus for image sensing and dynamic storage
US4028719A (en) * 1976-03-11 1977-06-07 Northrop Corporation Array type charge extraction device for infra-red detection
JPS5396720A (en) * 1977-02-04 1978-08-24 Hitachi Ltd Solid image pickup element
GB2034518B (en) * 1978-10-18 1983-06-29 Westinghouse Electric Corp Light activated p-i-n switch
JPS5737888A (en) * 1980-08-19 1982-03-02 Mitsubishi Electric Corp Photo detector
JPS6042988A (ja) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp 固体撮像装置
GB2181012B (en) * 1985-09-20 1989-09-13 Philips Electronic Associated Imaging devices comprising photovoltaic detector elements

Also Published As

Publication number Publication date
DE3715674A1 (de) 1988-12-01
DE3875655D1 (de) 1992-12-10
EP0295365A3 (en) 1990-01-10
NO882045D0 (no) 1988-05-10
JPH01220867A (ja) 1989-09-04
EP0295365A2 (de) 1988-12-21
DE3715674C2 (no) 1990-05-10
US4896201A (en) 1990-01-23
EP0295365B1 (de) 1992-11-04

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