NO154867B - - Google Patents

Info

Publication number

NO154867B

NO154867B NO772513A NO772513A NO154867B NO 154867 B NO154867 B NO 154867B NO 772513 A NO772513 A NO 772513A NO 772513 A NO772513 A NO 772513A NO 154867 B NO154867 B NO 154867B

Authority

NO

Norway

Prior art keywords

disc

circuit

semi

contacts

components

Prior art date

1977-07-14

Links

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• 239000004065 semiconductor Substances 0.000 claims description 21
• 239000004020 conductor Substances 0.000 claims description 4
• 239000011810 insulating material Substances 0.000 claims description 3
• 239000003990 capacitor Substances 0.000 description 17
• 238000000034 method Methods 0.000 description 14
• 239000000463 material Substances 0.000 description 10
• 238000004519 manufacturing process Methods 0.000 description 8
• 238000010586 diagram Methods 0.000 description 6
• PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
• 239000010931 gold Substances 0.000 description 5
• 229910052737 gold Inorganic materials 0.000 description 5
• 230000008901 benefit Effects 0.000 description 4
• 238000013461 design Methods 0.000 description 4
• 238000005530 etching Methods 0.000 description 4
• 229910052732 germanium Inorganic materials 0.000 description 3
• GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
• 239000012535 impurity Substances 0.000 description 3
• 230000008569 process Effects 0.000 description 3
• 239000000758 substrate Substances 0.000 description 3
• XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
• PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
• 230000002411 adverse Effects 0.000 description 2
• 229910052782 aluminium Inorganic materials 0.000 description 2
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
• 230000004888 barrier function Effects 0.000 description 2
• 238000003486 chemical etching Methods 0.000 description 2
• 230000008020 evaporation Effects 0.000 description 2
• 238000001704 evaporation Methods 0.000 description 2
• 229920002120 photoresistant polymer Polymers 0.000 description 2
• 238000002360 preparation method Methods 0.000 description 2
• 239000010703 silicon Substances 0.000 description 2
• 229910052710 silicon Inorganic materials 0.000 description 2
• 229910052814 silicon oxide Inorganic materials 0.000 description 2
• GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
• 229910045601 alloy Inorganic materials 0.000 description 1
• 239000000956 alloy Substances 0.000 description 1
• 238000005275 alloying Methods 0.000 description 1
• 239000004411 aluminium Substances 0.000 description 1
• LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 1
• 229910052787 antimony Inorganic materials 0.000 description 1
• WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
• 239000003518 caustics Substances 0.000 description 1
• 238000004140 cleaning Methods 0.000 description 1
• 238000000576 coating method Methods 0.000 description 1
• 229910017052 cobalt Inorganic materials 0.000 description 1
• 239000010941 cobalt Substances 0.000 description 1
• GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
• 238000010276 construction Methods 0.000 description 1
• 230000008878 coupling Effects 0.000 description 1
• 238000010168 coupling process Methods 0.000 description 1
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• 238000011161 development Methods 0.000 description 1
• 238000009792 diffusion process Methods 0.000 description 1
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• 229910052733 gallium Inorganic materials 0.000 description 1
• 238000010438 heat treatment Methods 0.000 description 1
• 238000005470 impregnation Methods 0.000 description 1
• 230000006872 improvement Effects 0.000 description 1
• WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
• 238000009413 insulation Methods 0.000 description 1
• 229910052742 iron Inorganic materials 0.000 description 1
• 229910000833 kovar Inorganic materials 0.000 description 1
• 239000004922 lacquer Substances 0.000 description 1
• 238000003754 machining Methods 0.000 description 1
• 229910001092 metal group alloy Inorganic materials 0.000 description 1
• 229910052759 nickel Inorganic materials 0.000 description 1
• 230000003647 oxidation Effects 0.000 description 1
• 238000007254 oxidation reaction Methods 0.000 description 1
• 239000003973 paint Substances 0.000 description 1
• 230000010363 phase shift Effects 0.000 description 1
• 238000012545 processing Methods 0.000 description 1
• 230000001681 protective effect Effects 0.000 description 1
• 239000002994 raw material Substances 0.000 description 1
• 230000008439 repair process Effects 0.000 description 1
• 239000002904 solvent Substances 0.000 description 1
• 230000000087 stabilizing effect Effects 0.000 description 1
• 239000007858 starting material Substances 0.000 description 1
• 239000000126 substance Substances 0.000 description 1
• 238000012360 testing method Methods 0.000 description 1
• 239000002966 varnish Substances 0.000 description 1