NO125419B - - Google Patents
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- Publication number
- NO125419B NO125419B NO2695/69A NO269569A NO125419B NO 125419 B NO125419 B NO 125419B NO 2695/69 A NO2695/69 A NO 2695/69A NO 269569 A NO269569 A NO 269569A NO 125419 B NO125419 B NO 125419B
- Authority
- NO
- Norway
- Prior art keywords
- layer
- semiconductor device
- epitaxial layer
- thickness
- gallium arsenide
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 34
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 13
- 239000002800 charge carrier Substances 0.000 claims description 8
- 229910002113 barium titanate Inorganic materials 0.000 claims description 6
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 239000004408 titanium dioxide Substances 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 235000003930 Aegle marmelos Nutrition 0.000 description 1
- 244000058084 Aegle marmelos Species 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical group Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/10—Solid-state travelling-wave devices
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6809255A NL6809255A (hr) | 1968-06-29 | 1968-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO125419B true NO125419B (hr) | 1972-09-04 |
Family
ID=19804035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO2695/69A NO125419B (hr) | 1968-06-29 | 1969-06-27 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US3648185A (hr) |
| BE (1) | BE735353A (hr) |
| BR (1) | BR6910215D0 (hr) |
| CH (1) | CH492344A (hr) |
| DE (1) | DE1932759C3 (hr) |
| DK (1) | DK124155B (hr) |
| ES (1) | ES368890A1 (hr) |
| FR (1) | FR2012013B1 (hr) |
| GB (1) | GB1271832A (hr) |
| NL (1) | NL6809255A (hr) |
| NO (1) | NO125419B (hr) |
| SE (1) | SE355896B (hr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3855542A (en) * | 1973-11-05 | 1974-12-17 | Sperry Rand Corp | Broad band high frequency diode amplifier |
| US3848196A (en) * | 1973-11-08 | 1974-11-12 | Rca Corp | Broadband trapatt diode amplifier |
| US3975690A (en) * | 1974-10-07 | 1976-08-17 | Communicatons Satellite Corporation (Comsat) | Planar transmission line comprising a material having negative differential conductivity |
| EP0309713A3 (de) * | 1987-09-29 | 1989-12-27 | Siemens Aktiengesellschaft | Verstärkender Oberflächenwellen-Empfänger |
| TWI295102B (en) * | 2006-01-13 | 2008-03-21 | Ind Tech Res Inst | Multi-functional substrate structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1161782A (en) * | 1965-08-26 | 1969-08-20 | Associated Semiconductor Mft | Improvements in Semiconductor Devices. |
| US3439236A (en) * | 1965-12-09 | 1969-04-15 | Rca Corp | Insulated-gate field-effect transistor with critical bulk characteristics for use as an oscillator component |
| US3487334A (en) * | 1968-02-06 | 1969-12-30 | Research Corp | Microwave power generator using lsa mode oscillations |
| US3551831A (en) * | 1968-06-21 | 1970-12-29 | Research Corp | Traveling-wave solid-state amplifier utilizing a semiconductor with negative differential mobility |
| US3526844A (en) * | 1969-02-03 | 1970-09-01 | Bell Telephone Labor Inc | Electromagnetic wave amplifier including a negative resistance semiconductor diode structure |
-
1968
- 1968-06-29 NL NL6809255A patent/NL6809255A/xx unknown
-
1969
- 1969-06-18 US US834280A patent/US3648185A/en not_active Expired - Lifetime
- 1969-06-26 SE SE09112/69*A patent/SE355896B/xx unknown
- 1969-06-26 BR BR210215/69A patent/BR6910215D0/pt unknown
- 1969-06-26 CH CH980869A patent/CH492344A/de not_active IP Right Cessation
- 1969-06-26 GB GB32370/69A patent/GB1271832A/en not_active Expired
- 1969-06-26 DK DK346569AA patent/DK124155B/da unknown
- 1969-06-27 BE BE735353D patent/BE735353A/xx unknown
- 1969-06-27 ES ES368890A patent/ES368890A1/es not_active Expired
- 1969-06-27 NO NO2695/69A patent/NO125419B/no unknown
- 1969-06-27 DE DE1932759A patent/DE1932759C3/de not_active Expired
- 1969-06-30 FR FR6921989A patent/FR2012013B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3648185A (en) | 1972-03-07 |
| DE1932759B2 (de) | 1978-02-09 |
| DE1932759A1 (de) | 1970-01-08 |
| GB1271832A (en) | 1972-04-26 |
| FR2012013A1 (hr) | 1970-03-13 |
| NL6809255A (hr) | 1969-12-31 |
| SE355896B (hr) | 1973-05-07 |
| DK124155B (da) | 1972-09-18 |
| DE1932759C3 (de) | 1978-09-21 |
| BE735353A (hr) | 1969-12-29 |
| CH492344A (de) | 1970-06-15 |
| BR6910215D0 (pt) | 1973-02-20 |
| ES368890A1 (es) | 1971-08-01 |
| FR2012013B1 (hr) | 1973-10-19 |
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