NO118002B - - Google Patents
Download PDFInfo
- Publication number
- NO118002B NO118002B NO151796A NO15179664A NO118002B NO 118002 B NO118002 B NO 118002B NO 151796 A NO151796 A NO 151796A NO 15179664 A NO15179664 A NO 15179664A NO 118002 B NO118002 B NO 118002B
- Authority
- NO
- Norway
- Prior art keywords
- type
- transistor
- collector
- flat
- germanium
- Prior art date
Links
- 229910052732 germanium Inorganic materials 0.000 claims description 20
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 26
- 239000013078 crystal Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000006735 deficit Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- OVJOMRKANUZJBM-UHFFFAOYSA-L lead(2+);sulfite Chemical compound [Pb+2].[O-]S([O-])=O OVJOMRKANUZJBM-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004936 stimulating effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29B—PREPARATION OR PRETREATMENT OF THE MATERIAL TO BE SHAPED; MAKING GRANULES OR PREFORMS; RECOVERY OF PLASTICS OR OTHER CONSTITUENTS OF WASTE MATERIAL CONTAINING PLASTICS
- B29B13/00—Conditioning or physical treatment of the material to be shaped
- B29B13/02—Conditioning or physical treatment of the material to be shaped by heating
- B29B13/022—Melting the material to be shaped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
- B29C48/022—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor characterised by the choice of material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
- B29C48/03—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor characterised by the shape of the extruded material at extrusion
- B29C48/06—Rod-shaped
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Extrusion Moulding Of Plastics Or The Like (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEB0072207 | 1963-06-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO118002B true NO118002B (da) | 1969-10-20 |
Family
ID=6977348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO151796A NO118002B (da) | 1963-06-07 | 1964-01-30 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3297808A (da) |
| AT (1) | AT249988B (da) |
| CH (1) | CH415035A (da) |
| DK (1) | DK113390B (da) |
| FI (1) | FI40328B (da) |
| GB (1) | GB1043229A (da) |
| LU (1) | LU45097A1 (da) |
| NL (1) | NL6400805A (da) |
| NO (1) | NO118002B (da) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4012478A (en) * | 1970-05-13 | 1977-03-15 | Masayuki Horikawa | Method of making anti-friction members from lubricant-impregnated polyamide synthetic resin materials |
| NL184773C (nl) * | 1977-04-19 | 1989-11-01 | Lankhorst Touwfab Bv | Werkwijze voor het verwerken van thermoplastisch kunststofmateriaal tot een voorwerp met de be- en verwerkbaarheidseigenschappen van hout. |
| US4781565A (en) * | 1982-12-27 | 1988-11-01 | Sri International | Apparatus for obtaining silicon from fluosilicic acid |
| DD246727A1 (de) * | 1986-03-24 | 1987-06-17 | Bauakademie Ddr | Konditioniervorrichtung zur herstellung von thermoplastschaeumen |
| JP2735957B2 (ja) * | 1991-02-27 | 1998-04-02 | ポリプラスチックス株式会社 | 樹脂成形用ダイ |
| JP3922564B2 (ja) * | 2003-01-14 | 2007-05-30 | 東海興業株式会社 | 表面平滑な押出成形品の製造方法及び押出成形装置 |
| USD822249S1 (en) | 2016-09-19 | 2018-07-03 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
| CN107521066A (zh) * | 2017-08-31 | 2017-12-29 | 浙江松华新材股份有限公司 | 一种聚四氟乙烯棒材成型装置 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2353825A (en) * | 1942-02-11 | 1944-07-18 | Owens Illinois Glass Co | Apparatus for molding thermoplastic materials |
| US2719330A (en) * | 1951-03-13 | 1955-10-04 | Polymer Corp | Method for making polyamide rod stock |
| US2789313A (en) * | 1952-04-28 | 1957-04-23 | Lapin Products Inc | Plastic bottle molding machine |
| NL95803C (da) * | 1953-12-31 | 1900-01-01 | ||
| US3068513A (en) * | 1958-12-24 | 1962-12-18 | Shamban & Co W S | Continuous molding process and apparatus |
| US3143584A (en) * | 1959-05-12 | 1964-08-04 | Ici Ltd | Spinning polypropylenes which have been subjected to thermal degradation promoted bythe presence of sulfur compounds |
-
1963
- 1963-12-23 LU LU45097D patent/LU45097A1/xx unknown
-
1964
- 1964-01-13 FI FI0058/64A patent/FI40328B/fi active
- 1964-01-16 AT AT31464A patent/AT249988B/de active
- 1964-01-24 GB GB3110/64A patent/GB1043229A/en not_active Expired
- 1964-01-24 US US340086A patent/US3297808A/en not_active Expired - Lifetime
- 1964-01-30 NO NO151796A patent/NO118002B/no unknown
- 1964-01-31 NL NL6400805A patent/NL6400805A/xx unknown
- 1964-02-18 CH CH194064A patent/CH415035A/de unknown
- 1964-02-26 DK DK93564AA patent/DK113390B/da unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3297808A (en) | 1967-01-10 |
| CH415035A (de) | 1966-06-15 |
| FI40328B (da) | 1968-09-02 |
| NL6400805A (da) | 1964-12-08 |
| AT249988B (de) | 1966-10-25 |
| GB1043229A (en) | 1966-09-21 |
| LU45097A1 (da) | 1964-02-24 |
| DK113390B (da) | 1969-03-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3476993A (en) | Five layer and junction bridging terminal switching device | |
| US2939056A (en) | Transistor | |
| US3115581A (en) | Miniature semiconductor integrated circuit | |
| US2959504A (en) | Semiconductive current limiters | |
| US3506893A (en) | Integrated circuits with surface barrier diodes | |
| US3211972A (en) | Semiconductor networks | |
| US3575646A (en) | Integrated circuit structures including controlled rectifiers | |
| US3699406A (en) | Semiconductor gate-controlled pnpn switch | |
| GB805207A (en) | Electric circuit devices utilizing semiconductor bodies and circuits including such devices | |
| US4200877A (en) | Temperature-compensated voltage reference diode with intermediate polycrystalline layer | |
| NO118002B (da) | ||
| US3121808A (en) | Low temperature negative resistance device | |
| US3231796A (en) | Pnpn semiconductor switch with predetermined forward breakover and reverse breakdownvoltages | |
| US3441815A (en) | Semiconductor structures for integrated circuitry and method of making the same | |
| US3495141A (en) | Controllable schottky diode | |
| GB920630A (en) | Improvements in the fabrication of semiconductor elements | |
| GB971261A (en) | Improvements in semiconductor devices | |
| US3671821A (en) | Semiconductor controlled rectifier including two emitter regions | |
| US3210563A (en) | Four-layer semiconductor switch with particular configuration exhibiting relatively high turn-off gain | |
| US5272363A (en) | Bidirectional protection component | |
| US3646411A (en) | Surface barrier junction diode | |
| US4166224A (en) | Photosensitive zero voltage semiconductor switching device | |
| US2915647A (en) | Semiconductive switch and negative resistance | |
| US3434023A (en) | Semiconductor switching devices with a tunnel junction diode in series with the gate electrode | |
| US3054033A (en) | Junction type semiconductor device |