NL94487C - - Google Patents

Info

Publication number
NL94487C
NL94487C NL94487DA NL94487C NL 94487 C NL94487 C NL 94487C NL 94487D A NL94487D A NL 94487DA NL 94487 C NL94487 C NL 94487C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL94487C publication Critical patent/NL94487C/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Arrangements For Transmission Of Measured Signals (AREA)
  • Measuring Fluid Pressure (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
NL94487D 1953-10-01 NL94487C (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US383537A US2782397A (en) 1953-10-01 1953-10-01 Piezoelectric interrogation of ferroelectric condensers

Publications (1)

Publication Number Publication Date
NL94487C true NL94487C (xx)

Family

ID=23513611

Family Applications (2)

Application Number Title Priority Date Filing Date
NL190978D NL190978A (xx) 1953-10-01
NL94487D NL94487C (xx) 1953-10-01

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL190978D NL190978A (xx) 1953-10-01

Country Status (5)

Country Link
US (1) US2782397A (xx)
DE (1) DE961314C (xx)
FR (1) FR1114425A (xx)
GB (1) GB752993A (xx)
NL (2) NL94487C (xx)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL202099A (xx) * 1954-11-23
BE551882A (xx) * 1955-12-22
US3037196A (en) * 1956-07-09 1962-05-29 Ibm Logical circuit element
US2980893A (en) * 1956-08-21 1961-04-18 Nippon Telegraph & Telephone Memory system for electric signal
NL223451A (xx) * 1956-11-09
US2944204A (en) * 1957-04-12 1960-07-05 Plessey Co Ltd Charging device for electrometers
US3142044A (en) * 1961-05-17 1964-07-21 Litton Systems Inc Ceramic memory element
US3404296A (en) * 1963-07-16 1968-10-01 Clevite Corp Transducer having a transition from a ferroelectric state to an antiferroelectric state
US3462746A (en) * 1966-02-14 1969-08-19 Bliss Co Ceramic ferroelectric memory device
US3733590A (en) * 1971-04-15 1973-05-15 A Kaufman Optimum electrode configuration ceramic memories with ceramic motor element and mechanical damping
US3740582A (en) * 1971-06-28 1973-06-19 Rca Corp Power control system employing piezo-ferroelectric devices
US4136027A (en) * 1972-09-22 1979-01-23 Osaka Gas Company Limited Method for treating water
US3930982A (en) * 1973-04-06 1976-01-06 The Carborundum Company Ferroelectric apparatus for dielectrophoresis particle extraction
DE3240884A1 (de) * 1982-11-05 1984-05-10 Philips Patentverwaltung Gmbh, 2000 Hamburg Keramisches bistabiles biegeelement
US5434811A (en) * 1987-11-19 1995-07-18 National Semiconductor Corporation Non-destructive read ferroelectric based memory circuit
US5440193A (en) * 1990-02-27 1995-08-08 University Of Maryland Method and apparatus for structural, actuation and sensing in a desired direction
US5424716A (en) * 1992-10-06 1995-06-13 The Whitaker Corporation Penetration detection system
US5729488A (en) * 1994-08-26 1998-03-17 Hughes Electronics Non-destructive read ferroelectric memory cell utilizing the ramer-drab effect
GB2362976B (en) * 2000-05-31 2005-04-27 Seiko Epson Corp Memory device
US9058868B2 (en) 2012-12-19 2015-06-16 International Business Machines Corporation Piezoelectronic memory
US9941472B2 (en) 2014-03-10 2018-04-10 International Business Machines Corporation Piezoelectronic device with novel force amplification
US9251884B2 (en) 2014-03-24 2016-02-02 International Business Machines Corporation Non-volatile, piezoelectronic memory based on piezoresistive strain produced by piezoelectric remanence

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2073251A (en) * 1935-08-28 1937-03-09 Rca Corp Voltmeter arrangement
US2633543A (en) * 1948-04-19 1953-03-31 Gulton Mfg Corp Bimorph element
US2695396A (en) * 1952-05-06 1954-11-23 Bell Telephone Labor Inc Ferroelectric storage device
US2666195A (en) * 1952-12-18 1954-01-12 Bell Telephone Labor Inc Sequential circuits

Also Published As

Publication number Publication date
DE961314C (de) 1957-04-04
NL190978A (xx)
FR1114425A (fr) 1956-04-12
GB752993A (en) 1956-07-18
US2782397A (en) 1957-02-19

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