NL9401790A - Method and device for etching thin layers, preferably of indium tin oxide layers. - Google Patents
Method and device for etching thin layers, preferably of indium tin oxide layers. Download PDFInfo
- Publication number
- NL9401790A NL9401790A NL9401790A NL9401790A NL9401790A NL 9401790 A NL9401790 A NL 9401790A NL 9401790 A NL9401790 A NL 9401790A NL 9401790 A NL9401790 A NL 9401790A NL 9401790 A NL9401790 A NL 9401790A
- Authority
- NL
- Netherlands
- Prior art keywords
- source
- etching
- vacuum chamber
- plasma
- tin oxide
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 21
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3346—Selectivity
Description
Titel: Werkwijze en inrichting voor het etsen van dunne lagen, bij voorkeur van indium-tin-oxyde-lagen.Title: Method and device for etching thin layers, preferably of indium tin oxide layers.
De uitvinding heeft betrekking op een werkwijze en eeninrichting voor het etsen van dunne lagen, bij voorkeur indium-tin-oxyde-lagen op glassubstraten in een vacuümkamer, welkeinrichting is voorzien van een boven de vacuümkamer aangebrachteplasmabron, van een daartegenover gelegen substraathouder en vaneen met de substraathouder verbonden hoogfrequentbron.The invention relates to a method and a device for etching thin layers, preferably indium tin oxide layers, on glass substrates in a vacuum chamber, which device is provided with a plasma source arranged above the vacuum chamber, with a substrate holder opposite it and connected with the substrate holder connected high frequency source.
Het etsen van indium-tin-oxyde-lagen, zogenoemde ito-lagen,wordt grotendeels in nat-chemische baden uitgevoerd. Het bezwaarvan deze werkwijze is milieutechnisch gezien gelegen in hetafvoeren van de vloeibare chemicaliën, alsmede in het isotropeetsgedrag en de vervuiling van de partikelen op grond door de inde baden aanwezige etsresten. Hier bieden de droog-etswerkwijzenvoordelen, omdat het etsen door reactieve gassen in vacuümgeschiedt en het etsen door versnelling van geïoniseerdegasdeeltjes in de richting van het substraat geschiedt. Hetioniseren van het gas kan daarbij door een plasma geschieden.The etching of indium tin oxide layers, so-called ito layers, is largely carried out in wet chemical baths. The objection of this method lies in environmental terms in the removal of the liquid chemicals, as well as in the isotropic behavior and contamination of the particles on the ground by the etching residues present in the baths. Here, the dry etching methods offer advantages, since the etching is carried out by reactive gases in a vacuum and the etching is done by accelerating ionized gas particles in the direction of the substrate. Deionization of the gas can be effected by a plasma.
Voldoende bekend voor het droog-etsen van ito-lagen zijnwerkwijzen met een parallel-platenreactor, welke werkwijzen hetnadeel bezitten dat de dichtheid en de soorten van etsdeeltjesniet onafhankelijk van de kinetische energie daarvan kunnenworden ingesteld.Sufficiently known for dry-etching ito layers are parallel plate reactor processes which have the disadvantage that the density and types of etching particles cannot be adjusted independently of their kinetic energy.
Een ander probleem bij het ito-etsen is de verschillendechemische reactiviteit van de bestanddelen van de ito-laag,namelijk indium, tin, en de oxydeverbindingen daarvan. Bij dewerkwijzen met de parallel-platenreactor (RIE-werkwijze) moetdaarom het reactie-evenwicht eerder op de physieke reactie wordengelegd (sputter-etsen), doordat de ionen door hoge bias-spanningen (~ 500 V) in de richting van de substraten wordenversneld. Deze beschieting leidt echter tot een te sterke etsingvan het substraatmateriaal en daarmee ook tot een geringeselectiviteit. Daarom worden hierbij ook koolstofhoudende gassenof freonen als etsgassen gebruikt, die een gelijkmatig etsen mogelijk maken. Dit effect wordt door een combinatie van etsen enpassiveren bereikt, waarbij deze combinatie dan echter tot eenlage etssnelheid leidt. Bovendien is slechts een zeer kleinprocesvenster aanwezig, omdat steeds op de smalle grens tussenetsen en passiveren wordt gewerkt. De koolstofhoudende freonenzijn daarenboven als milieubelastend geclassificeerd en defluordelen etsen het substraat materiaal glas, resp. S1O2.Another problem in ito-etching is the different chemical reactivity of the components of the ito layer, namely indium, tin, and the oxide compounds thereof. Therefore, in the parallel plate reactor (RIE) processes, the reaction equilibrium should rather be placed on the physical reaction (sputter etching), because the ions are accelerated towards the substrates by high bias voltages (~ 500 V). However, this bombardment leads to an excessive etching of the substrate material and thus also to a low selectivity. For this reason, carbonaceous gases or freons are also used as etching gases, which enable uniform etching. This effect is achieved by a combination of etching and passivation, but this combination then leads to a low etching speed. In addition, only a very small process window is present, because work is always carried out on the narrow boundary between etching and passivation. The carbon-containing freons are also classified as environmentally harmful and the fluorine parts etch the substrate material glass, respectively. S1O2.
De onderhavige uitvinding heeft tot doel een voor ito-lagengeschikte ets-werkwijze alsmede de daarvoor geschikte inrichtingte verschaffen, welke inrichting enerzijds een hoge etssnelheidmogelijk maakt en anderzijds niet de genoemde nadelen bezit.The object of the present invention is to provide an etching process suitable for ito layers and the device suitable therefor, which device on the one hand enables a high etching speed and on the other hand does not have the drawbacks mentioned.
Dit doel wordt volgens de uitvinding bereikt doordat alsetsgas CI2 of CI2 en H2 of CH4 in de vacuümkamer ingelaten kanworden en een procesdruk van 0,1 t/m 10 jubar instelbaar is,waarbij de hoogfrequent-voorspanningsvoorziening van desubstraathouder onafhankelijk van de dichtheid van de etsdeeltjesinstelbaar is en waarbij de plasmabron door een afzonderlijkehoogfrequentbron wordt gevoed, die een eigen aanpassingsnetwerkbezit.This object is achieved according to the invention in that etching gas CI2 or CI2 and H2 or CH4 can be introduced into the vacuum chamber and a process pressure of 0.1 to 10 jubar is adjustable, wherein the high-frequency bias supply of the substrate holder is adjustable independently of the density of the etching particles and wherein the plasma source is powered by a separate high frequency source, which has its own adaptive network.
De uitvinding voorziet in een etsen met chloorgas waarbijbij een geschikte verhouding van ionen, atomen, molekulen enkinetische energieën, zowel aan de eisen wat betreft het zonderrestanten werkende etsen wordt voldaan als ook een hogeselectiviteit ten opzichte van glas/Si02 mogelijk is. Chloor etstzowel indium alsook tin. De daartoe noodzakelijke afzonderlijkeafstellingen van plasmadichtheid en deeltjesenergie is door hetinzetten van door plasmabronnen ondersteunde etswerkwijzenmogelijk. Door toevoeging van waterstof kan bovendien het etsennog worden bestuurd, doordat de oxydeverbindingen van het indiumen tin worden verminderd.The invention provides an etching with chlorine gas in which at a suitable ratio of ions, atoms, molecules and kinetic energies, both the requirements with regard to the etch-free etching, as well as a high selectivity to glass / SiO 2, are met. Chlorine etches both indium and tin. The separate adjustments of plasma density and particle energy required for this are possible by employing etching methods supported by plasma sources. Moreover, the addition of hydrogen allows the etching to be controlled by reducing the oxide compounds of the indium and tin.
De inzet van plasmabronnen met een hoog vermogen maakt lage-drukprocessen {0,1 ... 10 μbar) mogelijk met CI2 of CI2/H2,waardoor een partikelvrij etsen mogelijk is, zoals dit voor detoepassing in de displaytechniek is geeist. Het etsen van groteoppervlakten wordt bereikt door het inzetten van meerdere plasmabronnen en/of door het wijder maken van het plasma doormiddel van een magnetische opsluiting.The use of high-power plasma sources enables low-pressure processes (0.1 ... 10 μbar) with CI2 or CI2 / H2, enabling particle-free etching as required for the application in display technology. Large area etching is achieved by using multiple plasma sources and / or widening the plasma by means of a magnetic confinement.
Het inzetten van door bronnen ondersteunde werkwijzen heeftvoordelen omdat de fragmentatie en ionisatie van de etsgassen inde plasmabron geschiedt, maar de energie van de deeltjes echteronafhankelijk door de hf-voorspanning aan de substraathouder kanworden ingesteld. Dit is voor de beide aan het etsen gesteldeeisen, het gelijkmatige etsen van de ito-lagen en het' selectiefetsen ten opzichte van het daaronder gelegen substraatmateriaalbepalend.The use of source-supported methods has advantages because the fragmentation and ionization of the etching gases takes place in the plasma source, but the energy of the particles can, however, be adjusted independently by the HF bias on the substrate holder. This is decisive for the two requirements for the etching, the uniform etching of the ito layers and the selection etching with respect to the underlying substrate material.
De uitvinding biedt meerdere uitvoeringsvormen, waarvan eréén in de navolgende tekening nader wordt toegelicht, hierintoont: figuur 1 een doorsnede door een van een ito-laag voorzienglassubstraat; en figuur 2 een zuiver schematische weergave van deetsinrichting.The invention offers several embodiments, one of which is explained in more detail in the following drawing, in which: Figure 1 shows a cross section through a glass substrate provided with an ito layer; and figure 2 is a purely schematic representation of the etching device.
De in figuur 2 getoonde inrichting bestaat in hoofdzaak uiteen vacuümkamer 2 met een sluis 3 voor het inbrengen- en uitnemenvan het substraat 4, een substraathouder 5, een als geheel met 6aangegeven vacuüm-pompsamenstel, een met de substraathouder 5elektrisch verbonden energievoorziening 7 met een hoogfrequent-generator 8 en een aanpassingsnetwerk 9, een venster 10 in dewand van de vacuümkamer 2 voor het waarnemen van het etsproces,een gasbox 11 met doseerinrichtingen voor het procesgas CI2, H2of CH4; een plasmabron 12, een de plasmabron omsluitenderingmagneet 13, antennes 14, 15 en een hoogfrequentbron 16 voorde plasmabron 12 met het aanpassingsnetwerk 17. Metverwijzingscijfer 19 is een magnetische afscherming aangegeven.The device shown in figure 2 mainly consists of a vacuum chamber 2 with a lock 3 for inserting and removing the substrate 4, a substrate holder 5, a vacuum pump assembly indicated as a whole with 6, an energy supply 7 electrically connected to the substrate holder 5 with a high frequency generator 8 and an adjustment network 9, a window 10 in the wall of the vacuum chamber 2 for observing the etching process, a gas box 11 with metering devices for the process gas CI2, H2or CH4; a plasma source 12, a plasma source enclosing magnet 13, antennas 14, 15 and a high frequency source 16 for plasma source 12 with the matching network 17. Reference numeral 19 denotes a magnetic shield.
Na het inbrengen van het substraat 4 in de vacuümkamer 2,het vacuümmaken van de kamer met behulp van het pompsamenstel 6en het via een gastoevoerleiding 18 inlaten van procesgas uit degasbox ll in de vacuümkamer 2, worden zowel de antennes 14, 15van de plasmabron 12 als ook de substraathouder 5, die de ets-anode vormt, via de beide hoogfrequentbronnen 8, 16 van elektrische energie voorzien. Beide hf-netdelen zijn telkens meteen eigen aanpassingsnetwerk verbonden, zodat bijvoorbeeld deplasmabron afzonderlijk instelbaar of afstembaar is.After introducing the substrate 4 into the vacuum chamber 2, vacuuming the chamber using the pump assembly 6 and introducing process gas from the gas box 11 into the vacuum chamber 2 via a gas supply line 18, the antennas 14, 15 of the plasma source 12 and the substrate holder 5, which forms the etching anode, is also supplied with electrical energy via the two high-frequency sources 8, 16. Both HF power supply units are each connected with their own adaptation network, so that, for example, the plasma source is individually adjustable or tunable.
Claims (4)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4337309 | 1993-11-02 | ||
| DE4337309A DE4337309A1 (en) | 1993-08-26 | 1993-11-02 | Method and device for etching thin films, preferably indium tin oxide films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL9401790A true NL9401790A (en) | 1995-06-01 |
Family
ID=6501577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL9401790A NL9401790A (en) | 1993-11-02 | 1994-10-27 | Method and device for etching thin layers, preferably of indium tin oxide layers. |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0652585A1 (en) |
| JP (1) | JPH07183284A (en) |
| FR (1) | FR2712119B1 (en) |
| GB (1) | GB2283461B (en) |
| IL (1) | IL109698A (en) |
| NL (1) | NL9401790A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6547934B2 (en) * | 1998-05-18 | 2003-04-15 | Applied Materials, Inc. | Reduction of metal oxide in a dual frequency etch chamber |
| US6297147B1 (en) | 1998-06-05 | 2001-10-02 | Applied Materials, Inc. | Plasma treatment for ex-situ contact fill |
| US7053002B2 (en) | 1998-12-04 | 2006-05-30 | Applied Materials, Inc | Plasma preclean with argon, helium, and hydrogen gases |
| US6368978B1 (en) | 1999-03-04 | 2002-04-09 | Applied Materials, Inc. | Hydrogen-free method of plasma etching indium tin oxide |
| US6794311B2 (en) | 2000-07-14 | 2004-09-21 | Applied Materials Inc. | Method and apparatus for treating low k dielectric layers to reduce diffusion |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5032221A (en) * | 1990-05-07 | 1991-07-16 | Eastman Kodak Company | Etching indium tin oxide |
| EP0495524A1 (en) * | 1991-01-18 | 1992-07-22 | Applied Materials, Inc. | System for processing a workpiece in a plasma and a process for generating such plasma |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2233286A (en) * | 1989-06-01 | 1991-01-09 | P Maguire | Pattern processing on tin oxide films |
-
1994
- 1994-04-05 EP EP94105261A patent/EP0652585A1/en not_active Ceased
- 1994-05-19 IL IL10969894A patent/IL109698A/en not_active IP Right Cessation
- 1994-07-25 GB GB9414908A patent/GB2283461B/en not_active Expired - Fee Related
- 1994-10-27 NL NL9401790A patent/NL9401790A/en not_active Application Discontinuation
- 1994-10-27 JP JP6263708A patent/JPH07183284A/en active Pending
- 1994-11-02 FR FR9413066A patent/FR2712119B1/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5032221A (en) * | 1990-05-07 | 1991-07-16 | Eastman Kodak Company | Etching indium tin oxide |
| EP0495524A1 (en) * | 1991-01-18 | 1992-07-22 | Applied Materials, Inc. | System for processing a workpiece in a plasma and a process for generating such plasma |
Non-Patent Citations (1)
| Title |
|---|
| MOHRI ET AL.: "Plasma etching of ITO thin films using a CH4/H2 gas mixture.", JAPANESE JOURNAL OF APPLIED PHYSICS, SUPPLEMENTS, vol. 29, no. 10, October 1990 (1990-10-01), TOKYO JA, pages L1932 - L1935, XP002015606 * |
Also Published As
| Publication number | Publication date |
|---|---|
| IL109698A0 (en) | 1994-08-26 |
| JPH07183284A (en) | 1995-07-21 |
| GB2283461A (en) | 1995-05-10 |
| IL109698A (en) | 1996-08-04 |
| EP0652585A1 (en) | 1995-05-10 |
| GB9414908D0 (en) | 1994-09-14 |
| GB2283461B (en) | 1997-10-15 |
| FR2712119B1 (en) | 1996-07-26 |
| FR2712119A1 (en) | 1995-05-12 |
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