NL7510282A - Vertikale verbindingstransistoren met veldwerking. - Google Patents
Vertikale verbindingstransistoren met veldwerking.Info
- Publication number
- NL7510282A NL7510282A NL7510282A NL7510282A NL7510282A NL 7510282 A NL7510282 A NL 7510282A NL 7510282 A NL7510282 A NL 7510282A NL 7510282 A NL7510282 A NL 7510282A NL 7510282 A NL7510282 A NL 7510282A
- Authority
- NL
- Netherlands
- Prior art keywords
- field effect
- vertical connection
- connection transistors
- transistors
- vertical
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/83—FETs having PN junction gate electrodes
- H10D30/831—Vertical FETs having PN junction gate electrodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10155574A JPS5739062B2 (cs) | 1974-09-04 | 1974-09-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7510282A true NL7510282A (nl) | 1976-03-08 |
Family
ID=14303654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7510282A NL7510282A (nl) | 1974-09-04 | 1975-09-01 | Vertikale verbindingstransistoren met veldwerking. |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5739062B2 (cs) |
| CA (1) | CA1035052A (cs) |
| DE (1) | DE2539021A1 (cs) |
| FR (1) | FR2284194A1 (cs) |
| GB (1) | GB1525732A (cs) |
| NL (1) | NL7510282A (cs) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4284998A (en) * | 1976-02-18 | 1981-08-18 | Tokyo Shibaura Electric Co., Ltd. | Junction type field effect transistor with source at oxide-gate interface depth to maximize μ |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB837651A (en) * | 1956-12-10 | 1960-06-15 | Teszner Stanislas | High power field-effect transistor |
| JPS5418112B2 (cs) * | 1971-12-20 | 1979-07-05 | ||
| NL7303347A (cs) * | 1972-03-10 | 1973-09-12 |
-
1974
- 1974-09-04 JP JP10155574A patent/JPS5739062B2/ja not_active Expired
-
1975
- 1975-08-20 CA CA233,828A patent/CA1035052A/en not_active Expired
- 1975-08-29 GB GB35690/75A patent/GB1525732A/en not_active Expired
- 1975-09-01 NL NL7510282A patent/NL7510282A/xx not_active Application Discontinuation
- 1975-09-02 DE DE19752539021 patent/DE2539021A1/de not_active Ceased
- 1975-09-04 FR FR7527176A patent/FR2284194A1/fr active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4284998A (en) * | 1976-02-18 | 1981-08-18 | Tokyo Shibaura Electric Co., Ltd. | Junction type field effect transistor with source at oxide-gate interface depth to maximize μ |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2284194A1 (fr) | 1976-04-02 |
| FR2284194B1 (cs) | 1979-01-19 |
| CA1035052A (en) | 1978-07-18 |
| DE2539021A1 (de) | 1976-03-25 |
| GB1525732A (en) | 1978-09-20 |
| JPS5128763A (cs) | 1976-03-11 |
| JPS5739062B2 (cs) | 1982-08-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BA | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |