NL7410652A - LASER OF THE GALLIUM-ALUMINUM-ARSEEN TYPE. - Google Patents

LASER OF THE GALLIUM-ALUMINUM-ARSEEN TYPE.

Info

Publication number
NL7410652A
NL7410652A NL7410652A NL7410652A NL7410652A NL 7410652 A NL7410652 A NL 7410652A NL 7410652 A NL7410652 A NL 7410652A NL 7410652 A NL7410652 A NL 7410652A NL 7410652 A NL7410652 A NL 7410652A
Authority
NL
Netherlands
Prior art keywords
arseen
gallium
laser
aluminum
type
Prior art date
Application number
NL7410652A
Other languages
Dutch (nl)
Original Assignee
Int Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Standard Electric Corp filed Critical Int Standard Electric Corp
Publication of NL7410652A publication Critical patent/NL7410652A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL7410652A 1973-08-21 1974-08-08 LASER OF THE GALLIUM-ALUMINUM-ARSEEN TYPE. NL7410652A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3943973A GB1385634A (en) 1973-08-21 1973-08-21 Gaa1as lasers

Publications (1)

Publication Number Publication Date
NL7410652A true NL7410652A (en) 1975-02-25

Family

ID=10409555

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7410652A NL7410652A (en) 1973-08-21 1974-08-08 LASER OF THE GALLIUM-ALUMINUM-ARSEEN TYPE.

Country Status (5)

Country Link
JP (1) JPS5051682A (en)
DE (1) DE2438787A1 (en)
FR (1) FR2246095B3 (en)
GB (1) GB1385634A (en)
NL (1) NL7410652A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395590A (en) * 1977-02-02 1978-08-21 Nippon Telegr & Teleph Corp <Ntt> Manufacture for semiconductor laser unit
US4438446A (en) * 1981-05-29 1984-03-20 Bell Telephone Laboratories, Incorporated Double barrier double heterostructure laser
FR2538171B1 (en) * 1982-12-21 1986-02-28 Thomson Csf SURFACE EMITTING LIGHT EMITTING DIODE
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device
US5060028A (en) * 1989-01-19 1991-10-22 Hewlett-Packard Company High band-gap opto-electronic device

Also Published As

Publication number Publication date
DE2438787A1 (en) 1975-03-06
FR2246095B3 (en) 1977-06-10
GB1385634A (en) 1975-02-26
JPS5051682A (en) 1975-05-08
FR2246095A1 (en) 1975-04-25

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