NL7401939A - Ladingsgekoppelde inrichting. - Google Patents

Ladingsgekoppelde inrichting.

Info

Publication number
NL7401939A
NL7401939A NL7401939A NL7401939A NL7401939A NL 7401939 A NL7401939 A NL 7401939A NL 7401939 A NL7401939 A NL 7401939A NL 7401939 A NL7401939 A NL 7401939A NL 7401939 A NL7401939 A NL 7401939A
Authority
NL
Netherlands
Prior art keywords
load
connected device
Prior art date
Application number
NL7401939A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7401939A priority Critical patent/NL7401939A/xx
Priority to US05/545,408 priority patent/US4110777A/en
Priority to DE2504088A priority patent/DE2504088C2/de
Priority to CA219,519A priority patent/CA1046638A/en
Priority to GB5490/75A priority patent/GB1495453A/en
Priority to AU78028/75A priority patent/AU494444B2/en
Priority to CH155575A priority patent/CH590561A5/xx
Priority to ES434627A priority patent/ES434627A1/es
Priority to JP1775875A priority patent/JPS5711152B2/ja
Priority to FR7504508A priority patent/FR2260872B1/fr
Publication of NL7401939A publication Critical patent/NL7401939A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107Substrate region of field-effect devices
    • H01L29/1091Substrate region of field-effect devices of charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Element Separation (AREA)
NL7401939A 1974-02-13 1974-02-13 Ladingsgekoppelde inrichting. NL7401939A (nl)

Priority Applications (10)

Application Number Priority Date Filing Date Title
NL7401939A NL7401939A (nl) 1974-02-13 1974-02-13 Ladingsgekoppelde inrichting.
US05/545,408 US4110777A (en) 1974-02-13 1975-01-30 Charge-coupled device
DE2504088A DE2504088C2 (de) 1974-02-13 1975-01-31 Ladungsgekoppelte Anordnung
CA219,519A CA1046638A (en) 1974-02-13 1975-02-06 Bulk charge coupled device with high doping at buried pn-junction
GB5490/75A GB1495453A (en) 1974-02-13 1975-02-10 Charged coupled devices
AU78028/75A AU494444B2 (en) 1974-02-13 1975-02-10 Charge-coupled device
CH155575A CH590561A5 (de) 1974-02-13 1975-02-10
ES434627A ES434627A1 (es) 1974-02-13 1975-02-11 Perfeccionamientos introducidos en un dispositivo electrico acoplado por carga.
JP1775875A JPS5711152B2 (de) 1974-02-13 1975-02-12
FR7504508A FR2260872B1 (de) 1974-02-13 1975-02-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7401939A NL7401939A (nl) 1974-02-13 1974-02-13 Ladingsgekoppelde inrichting.

Publications (1)

Publication Number Publication Date
NL7401939A true NL7401939A (nl) 1975-08-15

Family

ID=19820738

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7401939A NL7401939A (nl) 1974-02-13 1974-02-13 Ladingsgekoppelde inrichting.

Country Status (9)

Country Link
US (1) US4110777A (de)
JP (1) JPS5711152B2 (de)
CA (1) CA1046638A (de)
CH (1) CH590561A5 (de)
DE (1) DE2504088C2 (de)
ES (1) ES434627A1 (de)
FR (1) FR2260872B1 (de)
GB (1) GB1495453A (de)
NL (1) NL7401939A (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364076A (en) * 1977-08-26 1982-12-14 Texas Instruments Incorporated Co-planar well-type charge coupled device with enhanced storage capacity and reduced leakage current
US4365261A (en) * 1977-08-26 1982-12-21 Texas Instruments Incorporated Co-planar barrier-type charge coupled device with enhanced storage capacity and decreased leakage current
US4379306A (en) * 1977-08-26 1983-04-05 Texas Instruments Incorporated Non-coplanar barrier-type charge coupled device with enhanced storage capacity and reduced leakage current
US4151539A (en) * 1977-12-23 1979-04-24 The United States Of America As Represented By The Secretary Of The Air Force Junction-storage JFET bucket-brigade structure
US4216574A (en) * 1978-06-29 1980-08-12 Raytheon Company Charge coupled device
US4276099A (en) * 1978-10-11 1981-06-30 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Fabrication of infra-red charge coupled devices
US4240089A (en) * 1978-10-18 1980-12-16 General Electric Company Linearized charge transfer devices
US4559638A (en) * 1978-10-23 1985-12-17 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4234887A (en) * 1979-05-24 1980-11-18 International Business Machines Corporation V-Groove charge-coupled device
JPS577964A (en) * 1980-06-17 1982-01-16 Matsushita Electric Ind Co Ltd Charge transfer element
US4725872A (en) * 1985-02-25 1988-02-16 Tektronix, Inc. Fast channel single phase buried channel CCD
US4906584A (en) * 1985-02-25 1990-03-06 Tektronix, Inc. Fast channel single phase buried channel CCD
US5956085A (en) * 1996-11-07 1999-09-21 Umax Data Systems Inc. Apparatus for increasing the sample frequency of scanning
US6645506B1 (en) * 1997-04-18 2003-11-11 Ganeden Biotech, Inc. Topical compositions containing extracellular products of Pseudomonas lindbergii and Emu oil
DE102013018789A1 (de) * 2012-11-29 2014-06-05 Infineon Technologies Ag Steuern lichterzeugter Ladungsträger

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676715A (en) * 1970-06-26 1972-07-11 Bell Telephone Labor Inc Semiconductor apparatus for image sensing and dynamic storage
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3792322A (en) * 1973-04-19 1974-02-12 W Boyle Buried channel charge coupled devices
US3852799A (en) * 1973-04-27 1974-12-03 Bell Telephone Labor Inc Buried channel charge coupled apparatus

Also Published As

Publication number Publication date
DE2504088C2 (de) 1984-04-12
CA1046638A (en) 1979-01-16
JPS5711152B2 (de) 1982-03-02
GB1495453A (en) 1977-12-21
CH590561A5 (de) 1977-08-15
AU7802875A (en) 1976-08-12
FR2260872A1 (de) 1975-09-05
US4110777A (en) 1978-08-29
JPS50119582A (de) 1975-09-19
DE2504088A1 (de) 1975-08-14
ES434627A1 (es) 1977-03-16
FR2260872B1 (de) 1978-04-21

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Legal Events

Date Code Title Description
BC A request for examination has been filed
BV The patent application has lapsed