NL7305643A - - Google Patents

Info

Publication number
NL7305643A
NL7305643A NL7305643A NL7305643A NL7305643A NL 7305643 A NL7305643 A NL 7305643A NL 7305643 A NL7305643 A NL 7305643A NL 7305643 A NL7305643 A NL 7305643A NL 7305643 A NL7305643 A NL 7305643A
Authority
NL
Netherlands
Application number
NL7305643A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7305643A publication Critical patent/NL7305643A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
NL7305643A 1972-04-20 1973-04-19 NL7305643A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3976472A JPS493583A (fr) 1972-04-20 1972-04-20

Publications (1)

Publication Number Publication Date
NL7305643A true NL7305643A (fr) 1973-10-23

Family

ID=12561993

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7305643A NL7305643A (fr) 1972-04-20 1973-04-19

Country Status (6)

Country Link
JP (1) JPS493583A (fr)
CA (1) CA982701A (fr)
DE (1) DE2320563B2 (fr)
FR (1) FR2185860B1 (fr)
GB (1) GB1425957A (fr)
NL (1) NL7305643A (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5147583B2 (fr) * 1972-12-29 1976-12-15
JPS5754969B2 (fr) * 1974-04-04 1982-11-20
JPS5753672B2 (fr) * 1974-04-10 1982-11-13
JPS57658B2 (fr) * 1974-04-16 1982-01-07
JPS5714064B2 (fr) * 1974-04-25 1982-03-20
JPS5718710B2 (fr) * 1974-05-10 1982-04-17
JPS5648983B2 (fr) * 1974-05-10 1981-11-19
DE2904424C2 (de) * 1979-02-06 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
JPS5630758A (en) * 1979-08-21 1981-03-27 Nippon Telegr & Teleph Corp <Ntt> Negative feedback type bipolar transistor
FR2803101B1 (fr) * 1999-12-24 2002-04-12 St Microelectronics Sa Procede de fabrication de composants de puissance verticaux
CN113380883A (zh) * 2021-06-08 2021-09-10 深圳市槟城电子股份有限公司 半导体放电管及供电电路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches

Also Published As

Publication number Publication date
DE2320563A1 (de) 1973-10-25
CA982701A (en) 1976-01-27
DE2320563B2 (de) 1976-04-01
FR2185860B1 (fr) 1977-08-19
FR2185860A1 (fr) 1974-01-04
GB1425957A (en) 1976-02-25
JPS493583A (fr) 1974-01-12

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Legal Events

Date Code Title Description
BV The patent application has lapsed