NL7305643A - - Google Patents

Info

Publication number
NL7305643A
NL7305643A NL7305643A NL7305643A NL7305643A NL 7305643 A NL7305643 A NL 7305643A NL 7305643 A NL7305643 A NL 7305643A NL 7305643 A NL7305643 A NL 7305643A NL 7305643 A NL7305643 A NL 7305643A
Authority
NL
Netherlands
Application number
NL7305643A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7305643A publication Critical patent/NL7305643A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148Cathode regions of thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/60Gate-turn-off devices 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142Anode regions of thyristors or collector regions of gated bipolar-mode devices
NL7305643A 1972-04-20 1973-04-19 NL7305643A (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47039764A JPS493583A (cs) 1972-04-20 1972-04-20

Publications (1)

Publication Number Publication Date
NL7305643A true NL7305643A (cs) 1973-10-23

Family

ID=12561993

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7305643A NL7305643A (cs) 1972-04-20 1973-04-19

Country Status (6)

Country Link
JP (1) JPS493583A (cs)
CA (1) CA982701A (cs)
DE (1) DE2320563B2 (cs)
FR (1) FR2185860B1 (cs)
GB (1) GB1425957A (cs)
NL (1) NL7305643A (cs)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147583B2 (cs) * 1972-12-29 1976-12-15
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
JPS5754969B2 (cs) * 1974-04-04 1982-11-20
JPS5753672B2 (cs) * 1974-04-10 1982-11-13
JPS57658B2 (cs) * 1974-04-16 1982-01-07
JPS5714064B2 (cs) * 1974-04-25 1982-03-20
JPS5718710B2 (cs) * 1974-05-10 1982-04-17
JPS5648983B2 (cs) * 1974-05-10 1981-11-19
DE2904424C2 (de) * 1979-02-06 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
JPS6043668B2 (ja) * 1979-07-06 1985-09-30 株式会社日立製作所 半導体装置
JPS5630758A (en) * 1979-08-21 1981-03-27 Nippon Telegr & Teleph Corp <Ntt> Negative feedback type bipolar transistor
FR2803101B1 (fr) * 1999-12-24 2002-04-12 St Microelectronics Sa Procede de fabrication de composants de puissance verticaux
CN113380883B (zh) * 2021-06-08 2024-09-06 深圳市槟城电子股份有限公司 半导体放电管及供电电路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
GB1196576A (en) * 1968-03-06 1970-07-01 Westinghouse Electric Corp High Current Gate Controlled Switches

Also Published As

Publication number Publication date
DE2320563B2 (de) 1976-04-01
JPS493583A (cs) 1974-01-12
FR2185860B1 (cs) 1977-08-19
DE2320563A1 (de) 1973-10-25
FR2185860A1 (cs) 1974-01-04
CA982701A (en) 1976-01-27
GB1425957A (en) 1976-02-25

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Legal Events

Date Code Title Description
BV The patent application has lapsed