NL7303808A - - Google Patents

Info

Publication number
NL7303808A
NL7303808A NL7303808A NL7303808A NL7303808A NL 7303808 A NL7303808 A NL 7303808A NL 7303808 A NL7303808 A NL 7303808A NL 7303808 A NL7303808 A NL 7303808A NL 7303808 A NL7303808 A NL 7303808A
Authority
NL
Netherlands
Application number
NL7303808A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7303808A publication Critical patent/NL7303808A/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • ing And Chemical Polishing (AREA)
NL7303808A 1972-03-22 1973-03-19 NL7303808A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23704872A 1972-03-22 1972-03-22

Publications (1)

Publication Number Publication Date
NL7303808A true NL7303808A (cg-RX-API-DMAC10.html) 1973-09-25

Family

ID=22892131

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7303808A NL7303808A (cg-RX-API-DMAC10.html) 1972-03-22 1973-03-19

Country Status (6)

Country Link
US (1) US3770433A (cg-RX-API-DMAC10.html)
JP (1) JPS498176A (cg-RX-API-DMAC10.html)
BE (1) BE797059A (cg-RX-API-DMAC10.html)
DE (1) DE2313467A1 (cg-RX-API-DMAC10.html)
FR (1) FR2176750A1 (cg-RX-API-DMAC10.html)
NL (1) NL7303808A (cg-RX-API-DMAC10.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4012536A (en) * 1972-12-14 1977-03-15 Rca Corporation Electron beam recording medium comprising 1-methylvinyl methyl ketone
US4018937A (en) * 1972-12-14 1977-04-19 Rca Corporation Electron beam recording comprising polymer of 1-methylvinyl methyl ketone
US3847767A (en) * 1973-03-13 1974-11-12 Grace W R & Co Method of producing a screen printable photocurable solder resist
CA1032392A (en) * 1973-10-23 1978-06-06 Eugene D. Feit High energy radiation curable resist and preparatory process
US4078098A (en) * 1974-05-28 1978-03-07 International Business Machines Corporation High energy radiation exposed positive resist mask process
US3961101A (en) * 1974-09-16 1976-06-01 Rca Corporation Process for improved development of electron-beam-sensitive resist films
US4011351A (en) * 1975-01-29 1977-03-08 International Business Machines Corporation Preparation of resist image with methacrylate polymers
AU3870478A (en) * 1977-08-09 1980-02-14 Somar Mfg High energy radiation cruable resist material
US4383026A (en) * 1979-05-31 1983-05-10 Bell Telephone Laboratories, Incorporated Accelerated particle lithographic processing and articles so produced
WO1980002752A1 (en) * 1979-05-31 1980-12-11 Western Electric Co Accelerated particle lithographic processing and articles so produced
JPS56158747U (cg-RX-API-DMAC10.html) * 1980-04-28 1981-11-26
CA1164261A (en) * 1981-04-21 1984-03-27 Tsukasa Tada PROCESS FOR FORMING RESIST PATTERNS BY DEVELOPING A POLYMER CONTAINING TRIFLUOROETHYL-.alpha.- CHLOROCRYLATE UNITS WITH SPECIFIC KETONE COMPOUNDS
US4389482A (en) * 1981-12-14 1983-06-21 International Business Machines Corporation Process for forming photoresists with strong resistance to reactive ion etching and high sensitivity to mid- and deep UV-light
EP0338102B1 (de) * 1988-04-19 1993-03-10 International Business Machines Corporation Verfahren zur Herstellung von integrierten Halbleiterstrukturen welche Feldeffekttransistoren mit Kanallängen im Submikrometerbereich enthalten
CA2377081A1 (en) 2002-03-15 2003-09-15 Quantiscript Inc. Method of producing an etch-resistant polymer structure using electron beam lithography
US6989227B2 (en) * 2002-06-07 2006-01-24 Applied Materials Inc. E-beam curable resist and process for e-beam curing the resist

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2747103A (en) * 1951-03-28 1956-05-22 Polaroid Corp Radiation detection devices
NL101499C (cg-RX-API-DMAC10.html) * 1951-08-20
US3418295A (en) * 1965-04-27 1968-12-24 Du Pont Polymers and their preparation
US3357831A (en) * 1965-06-21 1967-12-12 Harris Intertype Corp Photopolymer
US3529960A (en) * 1967-01-24 1970-09-22 Hilbert Sloan Methods of treating resist coatings
US3594243A (en) * 1967-02-07 1971-07-20 Gen Aniline & Film Corp Formation of polymeric resists
US3575925A (en) * 1968-06-17 1971-04-20 Nat Starch Chem Corp Photosensitive coating systems
US3469982A (en) * 1968-09-11 1969-09-30 Jack Richard Celeste Process for making photoresists
US3702812A (en) * 1971-12-23 1972-11-14 Scm Corp Photopolymerization catalyst comprising ferrocene and an active halogen-containing compound

Also Published As

Publication number Publication date
BE797059A (fr) 1973-07-16
DE2313467A1 (de) 1973-09-27
US3770433A (en) 1973-11-06
JPS498176A (cg-RX-API-DMAC10.html) 1974-01-24
FR2176750A1 (cg-RX-API-DMAC10.html) 1973-11-02

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