NL7208496A - - Google Patents

Info

Publication number
NL7208496A
NL7208496A NL7208496A NL7208496A NL7208496A NL 7208496 A NL7208496 A NL 7208496A NL 7208496 A NL7208496 A NL 7208496A NL 7208496 A NL7208496 A NL 7208496A NL 7208496 A NL7208496 A NL 7208496A
Authority
NL
Netherlands
Application number
NL7208496A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7208496A publication Critical patent/NL7208496A/xx

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/28—Tubular capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
NL7208496A 1971-08-17 1972-06-21 NL7208496A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2141188A DE2141188C3 (en) 1971-08-17 1971-08-17 Device for crucible zone melting

Publications (1)

Publication Number Publication Date
NL7208496A true NL7208496A (en) 1973-02-20

Family

ID=5816983

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7208496A NL7208496A (en) 1971-08-17 1972-06-21

Country Status (8)

Country Link
US (1) US3769484A (en)
JP (1) JPS5522439B2 (en)
BE (1) BE787668A (en)
DE (1) DE2141188C3 (en)
FR (1) FR2149483B1 (en)
GB (1) GB1349106A (en)
IT (1) IT963844B (en)
NL (1) NL7208496A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2425468C3 (en) * 1974-05-27 1979-01-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for crucible zone melting of a crystallizable rod
DE2538812A1 (en) * 1975-09-01 1977-03-03 Wacker Chemitronic METHOD OF DOPING SEMICONDUCTOR RODS
JPS5290543A (en) * 1976-01-23 1977-07-29 Iwao Hishida Granular compositions of waxes
DE2700856A1 (en) * 1977-01-11 1978-07-13 Raphael Dr Leonhardt DEVICE FOR GROWING CRYSTALS OR THE LIKE. PROCEDURE
JPS6114114U (en) * 1984-07-02 1986-01-27 マツダ株式会社 Molding mounting clip
JP2503077B2 (en) * 1989-07-05 1996-06-05 日本碍子株式会社 Electric heater and heating method using the same
US20130112134A1 (en) * 2009-02-23 2013-05-09 Giga Industries, Inc. Method and Systems for Characterization and Production of High Quality Silicon
EP3057184B1 (en) * 2015-02-11 2017-01-25 MD Elektronik GmbH Method and device for manufacturing a cable and cable produced according to this method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1076623B (en) * 1957-11-15 1960-03-03 Siemens Ag Device for crucible-free zone drawing of rod-shaped semiconductor material
US3339130A (en) * 1964-07-02 1967-08-29 Gen Motors Corp Capacitor means
US3484679A (en) * 1966-10-03 1969-12-16 North American Rockwell Electrical apparatus for changing the effective capacitance of a cable
DE1916317C3 (en) * 1969-03-29 1975-07-24 Siemens Ag, 1000 Berlin Und 8000 Muenchen Power supply for an induction coil for crucible-free zone melting

Also Published As

Publication number Publication date
DE2141188A1 (en) 1973-02-22
FR2149483B1 (en) 1976-01-23
DE2141188C3 (en) 1979-09-13
JPS4829607A (en) 1973-04-19
FR2149483A1 (en) 1973-03-30
US3769484A (en) 1973-10-30
DE2141188B2 (en) 1979-01-11
IT963844B (en) 1974-01-21
GB1349106A (en) 1974-03-27
BE787668A (en) 1972-12-18
JPS5522439B2 (en) 1980-06-17

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