NL7206877A - - Google Patents
Info
- Publication number
- NL7206877A NL7206877A NL7206877A NL7206877A NL7206877A NL 7206877 A NL7206877 A NL 7206877A NL 7206877 A NL7206877 A NL 7206877A NL 7206877 A NL7206877 A NL 7206877A NL 7206877 A NL7206877 A NL 7206877A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7206877A NL7206877A (en:Method) | 1972-05-20 | 1972-05-20 | |
| DE19732324127 DE2324127A1 (de) | 1972-05-20 | 1973-05-12 | Verfahren zum niederschlagen elementaren halbleitermaterials |
| FR7317471A FR2185445B1 (en:Method) | 1972-05-20 | 1973-05-15 | |
| CA171,410A CA990626A (en) | 1972-05-20 | 1973-05-15 | Method of depositing elementary semiconductor material |
| GB2355473A GB1406760A (en) | 1972-05-20 | 1973-05-17 | Depositing semiconductor material |
| JP5420073A JPS5225295B2 (en:Method) | 1972-05-20 | 1973-05-17 | |
| IT6843873A IT985922B (it) | 1972-05-20 | 1973-05-17 | Procedimento per la deposizione di materiali semiconduttori allo sta to elementare |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7206877A NL7206877A (en:Method) | 1972-05-20 | 1972-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7206877A true NL7206877A (en:Method) | 1973-11-22 |
Family
ID=19816097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7206877A NL7206877A (en:Method) | 1972-05-20 | 1972-05-20 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5225295B2 (en:Method) |
| CA (1) | CA990626A (en:Method) |
| DE (1) | DE2324127A1 (en:Method) |
| FR (1) | FR2185445B1 (en:Method) |
| GB (1) | GB1406760A (en:Method) |
| IT (1) | IT985922B (en:Method) |
| NL (1) | NL7206877A (en:Method) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0045600B1 (en) * | 1980-07-28 | 1984-10-10 | Monsanto Company | Improved method for producing semiconductor grade silicon |
| JPS6169116A (ja) * | 1984-09-13 | 1986-04-09 | Toshiba Ceramics Co Ltd | シリコンウエハ−の連続ｃｖｄコ−テイング用サセプター |
| JP3725598B2 (ja) * | 1996-01-12 | 2005-12-14 | 東芝セラミックス株式会社 | エピタキシャルウェハの製造方法 |
| JP2006070342A (ja) * | 2004-09-03 | 2006-03-16 | Sumitomo Electric Ind Ltd | 気相成膜装置、サセプタおよび気相成膜方法 |
| JP6333646B2 (ja) | 2014-07-08 | 2018-05-30 | ビーエーエスエフ コーティングス ゲゼルシャフト ミット ベシュレンクテル ハフツングＢＡＳＦ Ｃｏａｔｉｎｇｓ ＧｍｂＨ | 二液型塗料組成物及びそれを用いた複層塗膜形成方法 |
| EP4353863A1 (en) | 2022-10-12 | 2024-04-17 | Imec VZW | A method for depositing a transition metal dichalcogenide |
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1972
- 1972-05-20 NL NL7206877A patent/NL7206877A/xx unknown
-
1973
- 1973-05-12 DE DE19732324127 patent/DE2324127A1/de not_active Withdrawn
- 1973-05-15 CA CA171,410A patent/CA990626A/en not_active Expired
- 1973-05-15 FR FR7317471A patent/FR2185445B1/fr not_active Expired
- 1973-05-17 JP JP5420073A patent/JPS5225295B2/ja not_active Expired
- 1973-05-17 IT IT6843873A patent/IT985922B/it active
- 1973-05-17 GB GB2355473A patent/GB1406760A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA990626A (en) | 1976-06-08 |
| GB1406760A (en) | 1975-09-17 |
| IT985922B (it) | 1974-12-30 |
| DE2324127A1 (de) | 1973-12-06 |
| FR2185445B1 (en:Method) | 1976-06-11 |
| FR2185445A1 (en:Method) | 1974-01-04 |
| JPS4943572A (en:Method) | 1974-04-24 |
| JPS5225295B2 (en:Method) | 1977-07-06 |