NL7107970A - - Google Patents

Info

Publication number
NL7107970A
NL7107970A NL7107970A NL7107970A NL7107970A NL 7107970 A NL7107970 A NL 7107970A NL 7107970 A NL7107970 A NL 7107970A NL 7107970 A NL7107970 A NL 7107970A NL 7107970 A NL7107970 A NL 7107970A
Authority
NL
Netherlands
Application number
NL7107970A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7107970A publication Critical patent/NL7107970A/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/76Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24Accessing extra cells, e.g. dummy cells or redundant cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
NL7107970A 1970-06-10 1971-06-10 NL7107970A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4511670A 1970-06-10 1970-06-10

Publications (1)

Publication Number Publication Date
NL7107970A true NL7107970A (xx) 1971-12-14

Family

ID=21936082

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7107970A NL7107970A (xx) 1970-06-10 1971-06-10

Country Status (3)

Country Link
US (1) US3681757A (xx)
DE (1) DE2128790A1 (xx)
NL (1) NL7107970A (xx)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4942516A (en) * 1970-12-28 1990-07-17 Hyatt Gilbert P Single chip integrated circuit computer architecture
US3897626A (en) * 1971-06-25 1975-08-05 Ibm Method of manufacturing a full capacity monolithic memory utilizing defective storage cells
USH1970H1 (en) 1971-07-19 2001-06-05 Texas Instruments Incorporated Variable function programmed system
US3789205A (en) * 1972-09-28 1974-01-29 Ibm Method of testing mosfet planar boards
US3803562A (en) * 1972-11-21 1974-04-09 Honeywell Inf Systems Semiconductor mass memory
US3800294A (en) * 1973-06-13 1974-03-26 Ibm System for improving the reliability of systems using dirty memories
US3872291A (en) * 1974-03-26 1975-03-18 Honeywell Inf Systems Field repairable memory subsystem
US4404647A (en) * 1978-03-16 1983-09-13 International Business Machines Corp. Dynamic array error recovery
US4234934A (en) * 1978-11-30 1980-11-18 Sperry Rand Corporation Apparatus for scaling memory addresses
US4326290A (en) * 1979-10-16 1982-04-20 Burroughs Corporation Means and methods for monitoring the storage states of a memory and other storage devices in a digital data processor
US4374411A (en) * 1980-02-14 1983-02-15 Hayes Microcomputer Products, Inc. Relocatable read only memory
US4335459A (en) * 1980-05-20 1982-06-15 Miller Richard L Single chip random access memory with increased yield and reliability
GB2083929B (en) * 1980-08-21 1984-03-07 Burroughs Corp Branched labyrinth wafer scale integrated circuit
JPS57211832A (en) * 1981-06-24 1982-12-25 Hitachi Ltd Programmable logic array
FR2555350B1 (fr) * 1983-11-22 1986-01-31 Eurotechnique Sa Memoire integree a capacite de stockage entiere ou reduite de moitie
US4670846A (en) * 1984-05-01 1987-06-02 Texas Instruments Incorporated Distributed bit integrated circuit design in a non-symmetrical data processing circuit
US5051994A (en) * 1989-04-28 1991-09-24 International Business Machines Corporation Computer memory module
US4992984A (en) * 1989-12-28 1991-02-12 International Business Machines Corporation Memory module utilizing partially defective memory chips
EP0454447A3 (en) * 1990-04-26 1993-12-08 Hitachi Ltd Semiconductor device assembly
SE502576C2 (sv) * 1993-11-26 1995-11-13 Ellemtel Utvecklings Ab Feltolerant kösystem
US6223146B1 (en) * 1994-06-29 2001-04-24 Kelsey-Hayes Company Method and apparatus for manufacturing a programmed electronic control unit for use in an anti-lock braking (ABS) system
GB2307568B (en) * 1995-11-22 1998-06-03 Holtek Microelectronics Inc A test method for testing a micro-controller
US5706032A (en) * 1995-12-15 1998-01-06 United Microelectronics Corporation Amendable static random access memory
US6081463A (en) * 1998-02-25 2000-06-27 Micron Technology, Inc. Semiconductor memory remapping
US6058055A (en) * 1998-03-31 2000-05-02 Micron Electronics, Inc. System for testing memory
US5991215A (en) * 1998-03-31 1999-11-23 Micron Electronics, Inc. Method for testing a memory chip in multiple passes
US6381708B1 (en) 1998-04-28 2002-04-30 Micron Technology, Inc. Method for decoding addresses for a defective memory array
US6381707B1 (en) * 1998-04-28 2002-04-30 Micron Technology, Inc. System for decoding addresses for a defective memory array
JP4893746B2 (ja) * 2006-10-27 2012-03-07 富士通株式会社 アドレス線故障処理装置、アドレス線故障処理方法、アドレス線故障処理プログラム、情報処理装置およびメモリコントローラ
US8195981B2 (en) * 2008-06-03 2012-06-05 International Business Machines Corporation Memory metadata used to handle memory errors without process termination
US7953914B2 (en) * 2008-06-03 2011-05-31 International Business Machines Corporation Clearing interrupts raised while performing operating system critical tasks

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3350690A (en) * 1964-02-25 1967-10-31 Ibm Automatic data correction for batchfabricated memories
US3422402A (en) * 1965-12-29 1969-01-14 Ibm Memory systems for using storage devices containing defective bits
US3444526A (en) * 1966-06-08 1969-05-13 Ibm Storage system using a storage device having defective storage locations
US3434116A (en) * 1966-06-15 1969-03-18 Ibm Scheme for circumventing bad memory cells
US3432812A (en) * 1966-07-15 1969-03-11 Ibm Memory system
US3460094A (en) * 1967-01-16 1969-08-05 Rca Corp Integrated memory system

Also Published As

Publication number Publication date
US3681757A (en) 1972-08-01
DE2128790A1 (de) 1971-12-16

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