NL7100218A - - Google Patents
Info
- Publication number
- NL7100218A NL7100218A NL7100218A NL7100218A NL7100218A NL 7100218 A NL7100218 A NL 7100218A NL 7100218 A NL7100218 A NL 7100218A NL 7100218 A NL7100218 A NL 7100218A NL 7100218 A NL7100218 A NL 7100218A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/04—Dopants, special
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/041—Doping control in crystal growth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/057—Gas flow control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/067—Graded energy gap
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP248870A JPS4918583B1 (US08197722-20120612-C00042.png) | 1970-01-09 | 1970-01-09 | |
| JP248770A JPS4918582B1 (US08197722-20120612-C00042.png) | 1970-01-09 | 1970-01-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7100218A true NL7100218A (US08197722-20120612-C00042.png) | 1971-07-13 |
Family
ID=26335862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7100218A NL7100218A (US08197722-20120612-C00042.png) | 1970-01-09 | 1971-01-08 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4007074A (US08197722-20120612-C00042.png) |
| DE (1) | DE2100692A1 (US08197722-20120612-C00042.png) |
| FR (1) | FR2075325A5 (US08197722-20120612-C00042.png) |
| NL (1) | NL7100218A (US08197722-20120612-C00042.png) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2356271A1 (fr) * | 1976-02-06 | 1978-01-20 | Labo Electronique Physique | Croissance acceleree en phase vapeur |
| US4123989A (en) * | 1977-09-12 | 1978-11-07 | Mobil Tyco Solar Energy Corp. | Manufacture of silicon on the inside of a tube |
| JPS5858317B2 (ja) * | 1978-06-12 | 1983-12-24 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 気相成長法 |
| US4279670A (en) * | 1979-08-06 | 1981-07-21 | Raytheon Company | Semiconductor device manufacturing methods utilizing a predetermined flow of reactive substance over a dopant material |
| JPS56138917A (en) * | 1980-03-31 | 1981-10-29 | Fujitsu Ltd | Vapor phase epitaxial growth |
| JPS6055478B2 (ja) * | 1982-10-19 | 1985-12-05 | 松下電器産業株式会社 | 気相成長方法 |
| US4488914A (en) * | 1982-10-29 | 1984-12-18 | The United States Of America As Represented By The Secretary Of The Air Force | Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch |
| US4504329A (en) * | 1983-10-06 | 1985-03-12 | The United States Of America As Represented By The Secretary Of The Air Force | Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source |
| CA1250511A (en) * | 1984-10-31 | 1989-02-28 | Rajaram Bhat | Technique for the growth of epitaxial compound semiconductor films |
| IL79612A0 (en) * | 1985-08-09 | 1986-11-30 | American Cyanamid Co | Method and apparatus for the chemical vapor deposition of iii-v semiconductors utilizing organometallic and elemental pnictide sources |
| FR2599558B1 (fr) * | 1986-05-27 | 1988-09-02 | Labo Electronique Physique | Procede de realisation d'un dispositif semi-conducteur, incluant le depot en phase vapeur de couches sur un substrat |
| US5445897A (en) * | 1989-11-22 | 1995-08-29 | Mitsubishi Kasei Polytec Company | Epitaxial wafer and process for producing the same |
| US5198387A (en) * | 1989-12-01 | 1993-03-30 | Texas Instruments Incorporated | Method and apparatus for in-situ doping of deposited silicon |
| JPH04160100A (ja) * | 1990-10-25 | 1992-06-03 | Nikko Kyodo Co Ltd | ３―５族化合物半導体のエピタキシャル成長方法 |
| JP2012248803A (ja) * | 2011-05-31 | 2012-12-13 | Hitachi Cable Ltd | 金属塩化物ガスの発生装置および金属塩化物ガスの発生方法、並びに、ハイドライド気相成長装置、窒化物半導体ウエハ、窒化物半導体デバイス、窒化物半導体発光ダイオード用ウエハ、窒化物半導体自立基板の製造方法および窒化物半導体結晶 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3312570A (en) * | 1961-05-29 | 1967-04-04 | Monsanto Co | Production of epitaxial films of semiconductor compound material |
| NL279070A (US08197722-20120612-C00042.png) * | 1959-06-18 | |||
| NL295293A (US08197722-20120612-C00042.png) * | 1962-07-13 | |||
| US3218205A (en) * | 1962-07-13 | 1965-11-16 | Monsanto Co | Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds |
| NL6700080A (US08197722-20120612-C00042.png) * | 1966-01-03 | 1967-07-04 | ||
| US3421952A (en) * | 1966-02-02 | 1969-01-14 | Texas Instruments Inc | Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source |
| US3462323A (en) * | 1966-12-05 | 1969-08-19 | Monsanto Co | Process for the preparation of compound semiconductors |
| US3471324A (en) * | 1966-12-23 | 1969-10-07 | Texas Instruments Inc | Epitaxial gallium arsenide |
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1971
- 1971-01-08 NL NL7100218A patent/NL7100218A/xx unknown
- 1971-01-08 US US05/105,006 patent/US4007074A/en not_active Expired - Lifetime
- 1971-01-08 DE DE19712100692 patent/DE2100692A1/de active Pending
- 1971-01-08 FR FR7100447A patent/FR2075325A5/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2075325A5 (US08197722-20120612-C00042.png) | 1971-10-08 |
| DE2100692A1 (de) | 1971-07-15 |
| USB105006I5 (US08197722-20120612-C00042.png) | 1976-03-23 |
| US4007074A (en) | 1977-02-08 |
