NL7002110A - - Google Patents
Info
- Publication number
- NL7002110A NL7002110A NL7002110A NL7002110A NL7002110A NL 7002110 A NL7002110 A NL 7002110A NL 7002110 A NL7002110 A NL 7002110A NL 7002110 A NL7002110 A NL 7002110A NL 7002110 A NL7002110 A NL 7002110A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
- Resistance Heating (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691907076 DE1907076A1 (de) | 1969-02-13 | 1969-02-13 | Graphitheiz- und/oder -traegerelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7002110A true NL7002110A (US20070167544A1-20070719-C00007.png) | 1970-08-17 |
Family
ID=5725061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7002110A NL7002110A (US20070167544A1-20070719-C00007.png) | 1969-02-13 | 1970-02-13 |
Country Status (4)
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4424193A (en) | 1979-07-09 | 1984-01-03 | Toshiba Ceramics Co., Ltd. | Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members |
| US4582561A (en) * | 1979-01-25 | 1986-04-15 | Sharp Kabushiki Kaisha | Method for making a silicon carbide substrate |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2825013A1 (de) * | 1978-06-07 | 1979-12-13 | Concordia Sprecher Schalt | Lasttrennschalter in einschub-bauweise |
| DE3505795A1 (de) * | 1985-02-20 | 1986-08-21 | BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau | Verfahren zur kontrollierten aenderung eines temperaturgradienten in einem substrat unter konstanthaltung einer vorgebbaren mittleren temperatur |
| JPH07176482A (ja) * | 1991-05-31 | 1995-07-14 | At & T Corp | エピタキシャル成長方法および装置 |
| US7459763B1 (en) | 2001-10-02 | 2008-12-02 | Actel Corporation | Reprogrammable metal-to-metal antifuse employing carbon-containing antifuse material |
| US20030062596A1 (en) * | 2001-10-02 | 2003-04-03 | Actel Corporation | Metal-to-metal antifuse employing carbon-containing antifuse material |
| US7390726B1 (en) | 2001-10-02 | 2008-06-24 | Actel Corporation | Switching ratio and on-state resistance of an antifuse programmed below 5 mA and having a Ta or TaN barrier metal layer |
| US6965156B1 (en) | 2002-12-27 | 2005-11-15 | Actel Corporation | Amorphous carbon metal-to-metal antifuse with adhesion promoting layers |
-
1969
- 1969-02-13 DE DE19691907076 patent/DE1907076A1/de active Pending
-
1970
- 1970-01-30 FR FR7003255A patent/FR2031266A5/fr not_active Expired
- 1970-02-13 GB GB712870A patent/GB1305454A/en not_active Expired
- 1970-02-13 NL NL7002110A patent/NL7002110A/xx unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4582561A (en) * | 1979-01-25 | 1986-04-15 | Sharp Kabushiki Kaisha | Method for making a silicon carbide substrate |
| US4424193A (en) | 1979-07-09 | 1984-01-03 | Toshiba Ceramics Co., Ltd. | Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members |
| US4624735A (en) * | 1979-07-09 | 1986-11-25 | Toshiba Ceramics Co., Ltd. | Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1907076A1 (de) | 1970-09-03 |
| GB1305454A (US20070167544A1-20070719-C00007.png) | 1973-01-31 |
| FR2031266A5 (US20070167544A1-20070719-C00007.png) | 1970-11-13 |
