NL6919560A - - Google Patents

Info

Publication number
NL6919560A
NL6919560A NL6919560A NL6919560A NL6919560A NL 6919560 A NL6919560 A NL 6919560A NL 6919560 A NL6919560 A NL 6919560A NL 6919560 A NL6919560 A NL 6919560A NL 6919560 A NL6919560 A NL 6919560A
Authority
NL
Netherlands
Application number
NL6919560A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19691904763 external-priority patent/DE1904763C/de
Application filed filed Critical
Publication of NL6919560A publication Critical patent/NL6919560A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/953—Making radiation resistant device

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Insulating Films (AREA)
NL6919560A 1969-01-31 1969-12-30 NL6919560A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691904763 DE1904763C (de) 1969-01-31 Verfahren zum Behandeln von Siliziumtransistoren mit Siliziumoxid-Deckschichten

Publications (1)

Publication Number Publication Date
NL6919560A true NL6919560A (de) 1970-08-04

Family

ID=5723928

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6919560A NL6919560A (de) 1969-01-31 1969-12-30

Country Status (4)

Country Link
US (1) US3691376A (de)
FR (1) FR2029814B1 (de)
GB (1) GB1259923A (de)
NL (1) NL6919560A (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5213716B2 (de) * 1971-12-22 1977-04-16
US3852612A (en) * 1972-08-31 1974-12-03 Westinghouse Electric Corp Selective low level irradiation to improve blocking voltage yield of junctioned semiconductors
US3755671A (en) * 1972-09-29 1973-08-28 Rca Corp Method of providing a semiconductor body with piezoelectric properties
US4014772A (en) * 1975-04-24 1977-03-29 Rca Corporation Method of radiation hardening semiconductor devices
US4238694A (en) * 1977-05-23 1980-12-09 Bell Telephone Laboratories, Incorporated Healing radiation defects in semiconductors
DE2755418A1 (de) * 1977-12-13 1979-06-21 Bosch Gmbh Robert Verfahren zur herstellung eines halbleiter-bauelements
US4184896A (en) * 1978-06-06 1980-01-22 The United States Of America As Represented By The Secretary Of The Air Force Surface barrier tailoring of semiconductor devices utilizing scanning electron microscope produced ionizing radiation
US4318750A (en) * 1979-12-28 1982-03-09 Westinghouse Electric Corp. Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects
US4663526A (en) * 1984-12-26 1987-05-05 Emil Kamieniecki Nondestructive readout of a latent electrostatic image formed on an insulating material
US4833324A (en) * 1985-04-03 1989-05-23 Optical Diagnostic Systems, Inc. Nondestructive readout of a latent electrostatic image formed on an insulating material
FR2663160B1 (fr) * 1990-06-12 1997-01-10 Commissariat Energie Atomique Procede pour la prolongation de la duree de fonctionnement d'un circuit a composants mos soumis a un rayonnement "gamma".
US5516731A (en) * 1994-06-02 1996-05-14 Lsi Logic Corporation High-temperature bias anneal of integrated circuits for improved radiation hardness and hot electron resistance
US6958621B2 (en) * 2003-12-02 2005-10-25 International Business Machines Corporation Method and circuit for element wearout recovery
CN103945901A (zh) * 2011-10-14 2014-07-23 住友重机械工业株式会社 带电粒子束照射系统以及带电粒子束照射计划方法

Also Published As

Publication number Publication date
US3691376A (en) 1972-09-12
GB1259923A (en) 1972-01-12
DE1904763A1 (de) 1970-09-24
FR2029814A1 (de) 1970-10-23
FR2029814B1 (de) 1974-10-11
DE1904763B2 (de) 1972-08-17

Similar Documents

Publication Publication Date Title
AU2270770A (de)
AU465413B2 (de)
FR2029814B1 (de)
AU450150B2 (de)
AU2355770A (de)
AU442375B2 (de)
AU470301B1 (de)
AU5113869A (de)
AU442538B2 (de)
AU442380B2 (de)
AU442554B2 (de)
AU442357B2 (de)
AU470661B1 (de)
AU442463B2 (de)
AU5109569A (de)
AU5077469A (de)
AU5133369A (de)
AU5397469A (de)
AU4949169A (de)
BE739069A (de)
AU5006968A (de)
AU480213A (de)
AU4815038A (de)
BE739416A (de)
CH1416670A4 (de)