NL6914653A - - Google Patents

Info

Publication number
NL6914653A
NL6914653A NL6914653A NL6914653A NL6914653A NL 6914653 A NL6914653 A NL 6914653A NL 6914653 A NL6914653 A NL 6914653A NL 6914653 A NL6914653 A NL 6914653A NL 6914653 A NL6914653 A NL 6914653A
Authority
NL
Netherlands
Application number
NL6914653A
Other versions
NL143433B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6674969A external-priority patent/JPS5021216B1/ja
Application filed filed Critical
Publication of NL6914653A publication Critical patent/NL6914653A/xx
Publication of NL143433B publication Critical patent/NL143433B/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/10Controlling or regulating
    • C30B19/106Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061Tipping system, e.g. by rotation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/06Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068Substrate holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
NL696914653A 1968-09-27 1969-09-26 Inrichting voor het epitaxiaal laten aangroeien van een film op een onderlaag vanuit een oplossing. NL143433B (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7090268 1968-09-27
JP6674969A JPS5021216B1 (cs) 1969-08-20 1969-08-20

Publications (2)

Publication Number Publication Date
NL6914653A true NL6914653A (cs) 1970-04-01
NL143433B NL143433B (nl) 1974-10-15

Family

ID=26407952

Family Applications (1)

Application Number Title Priority Date Filing Date
NL696914653A NL143433B (nl) 1968-09-27 1969-09-26 Inrichting voor het epitaxiaal laten aangroeien van een film op een onderlaag vanuit een oplossing.

Country Status (4)

Country Link
DE (1) DE1948551A1 (cs)
FR (1) FR2019075A1 (cs)
GB (1) GB1248999A (cs)
NL (1) NL143433B (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53271B1 (cs) * 1971-03-05 1978-01-06
BE795005A (fr) * 1972-02-09 1973-05-29 Rca Corp Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu
CN119465373A (zh) * 2024-11-21 2025-02-18 连城凯克斯科技有限公司 一种单晶炉拉晶装置

Also Published As

Publication number Publication date
NL143433B (nl) 1974-10-15
FR2019075A1 (cs) 1970-06-26
GB1248999A (en) 1971-10-06
DE1948551A1 (de) 1970-04-23

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Legal Events

Date Code Title Description
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: MATSUSHITA

V4 Lapsed because of reaching the maxim lifetime of a patent