NL6914376A - - Google Patents
Info
- Publication number
- NL6914376A NL6914376A NL6914376A NL6914376A NL6914376A NL 6914376 A NL6914376 A NL 6914376A NL 6914376 A NL6914376 A NL 6914376A NL 6914376 A NL6914376 A NL 6914376A NL 6914376 A NL6914376 A NL 6914376A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76689468A | 1968-10-11 | 1968-10-11 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL6914376A true NL6914376A (en) | 1970-04-14 |
NL164159B NL164159B (en) | 1980-06-16 |
NL164159C NL164159C (en) | 1980-11-17 |
Family
ID=25077853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6914376A NL164159C (en) | 1968-10-11 | 1969-09-23 | PLANARIC FIELD EFFECT TRANSISTOR WITH RING SHIELD AREA. |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS4941957B1 (en) |
BE (1) | BE740085A (en) |
CH (1) | CH494474A (en) |
DE (1) | DE1948052C3 (en) |
FR (1) | FR2020370B1 (en) |
GB (1) | GB1251732A (en) |
NL (1) | NL164159C (en) |
SE (1) | SE359403B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2701502B2 (en) * | 1990-01-25 | 1998-01-21 | 日産自動車株式会社 | Semiconductor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3440500A (en) * | 1966-09-26 | 1969-04-22 | Itt | High frequency field effect transistor |
FR1538402A (en) * | 1967-06-30 | 1968-09-06 | Radiotechnique Coprim Rtc | Manufacturing process of integrated semiconductor devices |
-
1969
- 1969-09-02 FR FR6930696A patent/FR2020370B1/fr not_active Expired
- 1969-09-23 DE DE19691948052 patent/DE1948052C3/en not_active Expired
- 1969-09-23 NL NL6914376A patent/NL164159C/en not_active IP Right Cessation
- 1969-09-26 GB GB1251732D patent/GB1251732A/en not_active Expired
- 1969-09-30 JP JP7747569A patent/JPS4941957B1/ja active Pending
- 1969-10-06 CH CH1498069A patent/CH494474A/en not_active IP Right Cessation
- 1969-10-07 SE SE1377469A patent/SE359403B/xx unknown
- 1969-10-10 BE BE740085D patent/BE740085A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
NL164159C (en) | 1980-11-17 |
FR2020370B1 (en) | 1973-11-16 |
SE359403B (en) | 1973-08-27 |
DE1948052B2 (en) | 1973-11-08 |
DE1948052A1 (en) | 1970-04-16 |
FR2020370A1 (en) | 1970-07-10 |
JPS4941957B1 (en) | 1974-11-12 |
GB1251732A (en) | 1971-10-27 |
BE740085A (en) | 1970-03-16 |
NL164159B (en) | 1980-06-16 |
DE1948052C3 (en) | 1975-03-06 |
CH494474A (en) | 1970-07-31 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
V1 | Lapsed because of non-payment of the annual fee |