NL6913648A - - Google Patents
Info
- Publication number
- NL6913648A NL6913648A NL6913648A NL6913648A NL6913648A NL 6913648 A NL6913648 A NL 6913648A NL 6913648 A NL6913648 A NL 6913648A NL 6913648 A NL6913648 A NL 6913648A NL 6913648 A NL6913648 A NL 6913648A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/01855—Interface arrangements synchronous, i.e. using clock signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75820168A | 1968-09-09 | 1968-09-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6913648A true NL6913648A (xx) | 1970-03-11 |
Family
ID=25050897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6913648A NL6913648A (xx) | 1968-09-09 | 1969-09-08 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3622812A (xx) |
| BR (1) | BR6912289D0 (xx) |
| CA (1) | CA935230A (xx) |
| DE (1) | DE1945219A1 (xx) |
| ES (1) | ES370818A1 (xx) |
| FR (1) | FR2017619A1 (xx) |
| GB (1) | GB1283402A (xx) |
| IE (1) | IE33267B1 (xx) |
| NL (1) | NL6913648A (xx) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2118357A5 (xx) * | 1970-12-18 | 1972-07-28 | Thomson Csf | |
| US3787717A (en) * | 1971-12-09 | 1974-01-22 | Ibm | Over voltage protection circuit lateral bipolar transistor with gated collector junction |
| DE2203247C3 (de) * | 1972-01-24 | 1980-02-28 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterbauelement mit steuerbarer Dämpfung sowie Schaltungsanordnung zu dessen Betrieb |
| US3974404A (en) * | 1973-02-15 | 1976-08-10 | Motorola, Inc. | Integrated circuit interface stage for high noise environment |
| DE2529951A1 (de) * | 1975-07-04 | 1977-01-27 | Siemens Ag | Lateraler, bipolarer transistor |
| US4048649A (en) * | 1976-02-06 | 1977-09-13 | Transitron Electronic Corporation | Superintegrated v-groove isolated bipolar and vmos transistors |
| US4128775A (en) * | 1977-06-22 | 1978-12-05 | National Semiconductor Corporation | Voltage translator for interfacing TTL and CMOS circuits |
| US4217688A (en) * | 1978-06-12 | 1980-08-19 | Rca Corporation | Fabrication of an integrated injection logic device incorporating an MOS/bipolar current injector |
| US4237472A (en) * | 1979-03-12 | 1980-12-02 | Rca Corporation | High performance electrically alterable read only memory (EAROM) |
| NO803666L (no) * | 1980-12-03 | 1982-06-04 | Moshe Alamaro | Modifisert birkeland/eyde - prosess ii |
| US4678936A (en) * | 1984-02-17 | 1987-07-07 | Analog Devices, Incorporated | MOS-cascoded bipolar current sources in non-epitaxial structure |
| US5103281A (en) * | 1984-02-17 | 1992-04-07 | Holloway Peter R | MOS-cascoded bipolar current sources in non-epitaxial structure |
| US4891533A (en) * | 1984-02-17 | 1990-01-02 | Analog Devices, Incorporated | MOS-cascoded bipolar current sources in non-epitaxial structure |
| US5614424A (en) * | 1996-01-16 | 1997-03-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for fabricating an accumulated-base bipolar junction transistor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3454785A (en) * | 1964-07-27 | 1969-07-08 | Philco Ford Corp | Shift register employing insulated gate field effect transistors |
| GB1053428A (xx) * | 1964-11-23 | |||
| US3445734A (en) * | 1965-12-22 | 1969-05-20 | Ibm | Single diffused surface transistor and method of making same |
| US3404450A (en) * | 1966-01-26 | 1968-10-08 | Westinghouse Electric Corp | Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions |
| US3401319A (en) * | 1966-03-08 | 1968-09-10 | Gen Micro Electronics Inc | Integrated latch circuit |
| US3448293A (en) * | 1966-10-07 | 1969-06-03 | Foxboro Co | Field effect switching circuit |
| US3504293A (en) * | 1968-02-29 | 1970-03-31 | Westinghouse Electric Corp | Amplifier apparatus including field effect and bipolar transistors suitable for integration |
-
1968
- 1968-09-09 US US758201A patent/US3622812A/en not_active Expired - Lifetime
-
1969
- 1969-08-07 CA CA058934A patent/CA935230A/en not_active Expired
- 1969-08-11 GB GB39980/69A patent/GB1283402A/en not_active Expired
- 1969-08-12 IE IE1135/69A patent/IE33267B1/xx unknown
- 1969-08-25 ES ES370818A patent/ES370818A1/es not_active Expired
- 1969-09-01 FR FR6929791A patent/FR2017619A1/fr not_active Withdrawn
- 1969-09-06 DE DE19691945219 patent/DE1945219A1/de active Pending
- 1969-09-08 NL NL6913648A patent/NL6913648A/xx unknown
- 1969-09-09 BR BR212289/69A patent/BR6912289D0/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| ES370818A1 (es) | 1971-10-16 |
| US3622812A (en) | 1971-11-23 |
| IE33267B1 (en) | 1974-05-01 |
| DE1945219A1 (de) | 1970-07-09 |
| BR6912289D0 (pt) | 1973-01-11 |
| IE33267L (en) | 1970-03-09 |
| FR2017619A1 (xx) | 1970-05-22 |
| GB1283402A (en) | 1972-07-26 |
| CA935230A (en) | 1973-10-09 |