NL6900337A - - Google Patents

Info

Publication number
NL6900337A
NL6900337A NL6900337A NL6900337A NL6900337A NL 6900337 A NL6900337 A NL 6900337A NL 6900337 A NL6900337 A NL 6900337A NL 6900337 A NL6900337 A NL 6900337A NL 6900337 A NL6900337 A NL 6900337A
Authority
NL
Netherlands
Application number
NL6900337A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6900337A publication Critical patent/NL6900337A/xx

Links

Classifications

    • H10W74/43—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W72/90—
    • H10W72/07554—
    • H10W72/536—
    • H10W72/547—
    • H10W72/59—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6900337A 1968-02-19 1969-01-09 NL6900337A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70625668A 1968-02-19 1968-02-19

Publications (1)

Publication Number Publication Date
NL6900337A true NL6900337A (cg-RX-API-DMAC10.html) 1969-08-21

Family

ID=24836842

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6900337A NL6900337A (cg-RX-API-DMAC10.html) 1968-02-19 1969-01-09

Country Status (6)

Country Link
US (1) US3698071A (cg-RX-API-DMAC10.html)
JP (1) JPS4813270B1 (cg-RX-API-DMAC10.html)
DE (1) DE1815913A1 (cg-RX-API-DMAC10.html)
FR (1) FR1596888A (cg-RX-API-DMAC10.html)
GB (1) GB1237952A (cg-RX-API-DMAC10.html)
NL (1) NL6900337A (cg-RX-API-DMAC10.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5317860B1 (cg-RX-API-DMAC10.html) * 1971-01-22 1978-06-12
US3766637A (en) * 1972-05-04 1973-10-23 Rca Corp Method of making mos transistors
US3907616A (en) * 1972-11-15 1975-09-23 Texas Instruments Inc Method of forming doped dielectric layers utilizing reactive plasma deposition
JPS49129778U (cg-RX-API-DMAC10.html) * 1973-03-06 1974-11-07
US4217375A (en) * 1977-08-30 1980-08-12 Bell Telephone Laboratories, Incorporated Deposition of doped silicon oxide films
US4888203A (en) * 1987-11-13 1989-12-19 Massachusetts Institute Of Technology Hydrolysis-induced vapor deposition of oxide films
US5098857A (en) * 1989-12-22 1992-03-24 International Business Machines Corp. Method of making semi-insulating gallium arsenide by oxygen doping in metal-organic vapor phase epitaxy

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3053683A (en) * 1958-09-19 1962-09-11 Du Pont Pigment, method of making same, and coating compositions containing same
US2972555A (en) * 1958-11-07 1961-02-21 Union Carbide Corp Gas plating of alumina
US3154439A (en) * 1959-04-09 1964-10-27 Sprague Electric Co Method for forming a protective skin for transistor
US3139362A (en) * 1961-12-29 1964-06-30 Bell Telephone Labor Inc Method of manufacturing semiconductive devices
US3511703A (en) * 1963-09-20 1970-05-12 Motorola Inc Method for depositing mixed oxide films containing aluminum oxide
US3298879A (en) * 1964-03-23 1967-01-17 Rca Corp Method of fabricating a semiconductor by masking
GB1060925A (en) * 1964-04-27 1967-03-08 Westinghouse Electric Corp Growth of insulating films such as for semiconductor devices
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
US3431636A (en) * 1964-11-12 1969-03-11 Texas Instruments Inc Method of making diffused semiconductor devices
US3396052A (en) * 1965-07-14 1968-08-06 Bell Telephone Labor Inc Method for coating semiconductor devices with silicon oxide
US3419761A (en) * 1965-10-11 1968-12-31 Ibm Method for depositing silicon nitride insulating films and electric devices incorporating such films
US3422321A (en) * 1966-06-20 1969-01-14 Sperry Rand Corp Oxygenated silicon nitride semiconductor devices and silane method for making same
US3462700A (en) * 1966-08-10 1969-08-19 Bell Telephone Labor Inc Semiconductor amplifier using field effect modulation of tunneling

Also Published As

Publication number Publication date
US3698071A (en) 1972-10-17
JPS4813270B1 (cg-RX-API-DMAC10.html) 1973-04-26
GB1237952A (cg-RX-API-DMAC10.html) 1971-07-07
DE1815913A1 (de) 1969-08-28
FR1596888A (cg-RX-API-DMAC10.html) 1970-06-22

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