NL6811021A - - Google Patents

Info

Publication number
NL6811021A
NL6811021A NL6811021A NL6811021A NL6811021A NL 6811021 A NL6811021 A NL 6811021A NL 6811021 A NL6811021 A NL 6811021A NL 6811021 A NL6811021 A NL 6811021A NL 6811021 A NL6811021 A NL 6811021A
Authority
NL
Netherlands
Application number
NL6811021A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6811021A publication Critical patent/NL6811021A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40Crystalline structures
    • H10D62/405Orientations of crystalline planes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P95/00
    • H10W74/43
NL6811021A 1967-08-03 1968-08-02 NL6811021A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65808367A 1967-08-03 1967-08-03

Publications (1)

Publication Number Publication Date
NL6811021A true NL6811021A (enExample) 1969-02-05

Family

ID=24639826

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6811021A NL6811021A (enExample) 1967-08-03 1968-08-02

Country Status (3)

Country Link
DE (1) DE1764765A1 (enExample)
FR (1) FR1574577A (enExample)
NL (1) NL6811021A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL171309C (nl) * 1970-03-02 1983-03-01 Hitachi Ltd Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium.
JPS5147583B2 (enExample) * 1972-12-29 1976-12-15
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
FR2454697A1 (fr) * 1979-04-20 1980-11-14 Thomson Csf Procede de formation d'une couche epitaxiee homopolaire sur un substrat semiconducteur

Also Published As

Publication number Publication date
FR1574577A (enExample) 1969-07-11
DE1764765A1 (de) 1971-07-08

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