NL6807317A - - Google Patents

Info

Publication number
NL6807317A
NL6807317A NL6807317A NL6807317A NL6807317A NL 6807317 A NL6807317 A NL 6807317A NL 6807317 A NL6807317 A NL 6807317A NL 6807317 A NL6807317 A NL 6807317A NL 6807317 A NL6807317 A NL 6807317A
Authority
NL
Netherlands
Application number
NL6807317A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6807317A priority Critical patent/NL6807317A/xx
Priority to DE19691924620 priority patent/DE1924620A1/de
Priority to FR6916332A priority patent/FR2009170B1/fr
Priority to CH768269A priority patent/CH489914A/de
Priority to US828799A priority patent/US3576477A/en
Priority to BE733495D priority patent/BE733495A/xx
Publication of NL6807317A publication Critical patent/NL6807317A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NL6807317A 1968-05-23 1968-05-23 NL6807317A (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL6807317A NL6807317A (it) 1968-05-23 1968-05-23
DE19691924620 DE1924620A1 (de) 1968-05-23 1969-05-14 Feldeffekttransistor
FR6916332A FR2009170B1 (it) 1968-05-23 1969-05-20
CH768269A CH489914A (de) 1968-05-23 1969-05-20 Feldeffekttransistor
US828799A US3576477A (en) 1968-05-23 1969-05-21 Insulated gate fet with selectively doped thick and thin insulators
BE733495D BE733495A (it) 1968-05-23 1969-05-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6807317A NL6807317A (it) 1968-05-23 1968-05-23

Publications (1)

Publication Number Publication Date
NL6807317A true NL6807317A (it) 1969-11-25

Family

ID=19803718

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6807317A NL6807317A (it) 1968-05-23 1968-05-23

Country Status (6)

Country Link
US (1) US3576477A (it)
BE (1) BE733495A (it)
CH (1) CH489914A (it)
DE (1) DE1924620A1 (it)
FR (1) FR2009170B1 (it)
NL (1) NL6807317A (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299911A (it) * 1951-08-02
US3816769A (en) * 1969-12-17 1974-06-11 Integrated Photomatrix Ltd Method and circuit element for the selective charging of a semiconductor diffusion region
JPS524426B2 (it) * 1973-04-20 1977-02-03
US6200843B1 (en) 1998-09-24 2001-03-13 International Business Machines Corporation High-voltage, high performance FETs

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1351622A (fr) * 1962-01-19 1964-02-07 Rca Corp Dispositifs semi-conducteurs et leur procédé de fabrication
FR1373247A (fr) * 1962-09-07 1964-09-25 Rca Corp Dispositif semiconducteur et procédé pour la fabrication de ce dispositif
US3246173A (en) * 1964-01-29 1966-04-12 Rca Corp Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate
US3386016A (en) * 1965-08-02 1968-05-28 Sprague Electric Co Field effect transistor with an induced p-type channel by means of high work function metal or oxide
US3450961A (en) * 1966-05-26 1969-06-17 Westinghouse Electric Corp Semiconductor devices with a region having portions of differing depth and concentration
US3440500A (en) * 1966-09-26 1969-04-22 Itt High frequency field effect transistor
US3428875A (en) * 1966-10-03 1969-02-18 Fairchild Camera Instr Co Variable threshold insulated gate field effect device
FR1530926A (fr) * 1966-10-13 1968-06-28 Rca Corp Procédé pour la fabrication de dispositifs à effet de champ à électrodes de commande isolées

Also Published As

Publication number Publication date
CH489914A (de) 1970-04-30
BE733495A (it) 1969-11-24
FR2009170A1 (it) 1970-01-30
DE1924620A1 (de) 1969-11-27
US3576477A (en) 1971-04-27
FR2009170B1 (it) 1973-12-21

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