NL6806501A - - Google Patents
Info
- Publication number
- NL6806501A NL6806501A NL6806501A NL6806501A NL6806501A NL 6806501 A NL6806501 A NL 6806501A NL 6806501 A NL6806501 A NL 6806501A NL 6806501 A NL6806501 A NL 6806501A NL 6806501 A NL6806501 A NL 6806501A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/017—Clean surfaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/925—Fluid growth doping control, e.g. delta doping
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US63715967A | 1967-05-09 | 1967-05-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6806501A true NL6806501A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1968-11-11 |
Family
ID=24554796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6806501A NL6806501A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1967-05-09 | 1968-05-08 |
Country Status (6)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3716422A (en) * | 1970-03-30 | 1973-02-13 | Ibm | Method of growing an epitaxial layer by controlling autodoping |
| US3847686A (en) * | 1970-05-27 | 1974-11-12 | Gen Electric | Method of forming silicon epitaxial layers |
| DE2104752B2 (de) * | 1971-02-02 | 1975-02-20 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zum Herstellen einer Halbleiter-Kapazitätsdiode |
| US4106953A (en) * | 1976-12-28 | 1978-08-15 | Motorola, Inc. | Method of producing an ion implanted tuning diode |
| US4354309A (en) * | 1978-12-29 | 1982-10-19 | International Business Machines Corp. | Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon |
| US4381952A (en) * | 1981-05-11 | 1983-05-03 | Rca Corporation | Method for fabricating a low loss varactor diode |
| CN101488500B (zh) * | 2001-04-04 | 2016-01-27 | 三菱电机株式会社 | 半导体器件 |
| JP6067957B2 (ja) * | 2011-02-15 | 2017-01-25 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1514431C3 (de) * | 1965-04-07 | 1974-08-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität |
| US3434893A (en) * | 1965-06-28 | 1969-03-25 | Honeywell Inc | Semiconductor device with a lateral retrograded pn junction |
-
1967
- 1967-05-09 US US637159A patent/US3523838A/en not_active Expired - Lifetime
-
1968
- 1968-04-11 GB GB07499/68A patent/GB1182222A/en not_active Expired
- 1968-05-07 FR FR1563413D patent/FR1563413A/fr not_active Expired
- 1968-05-08 NL NL6806501A patent/NL6806501A/xx unknown
- 1968-05-08 BE BE714826D patent/BE714826A/xx unknown
- 1968-05-08 DE DE19681764275 patent/DE1764275A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| BE714826A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1968-11-08 |
| DE1764275A1 (de) | 1972-02-03 |
| GB1182222A (en) | 1970-02-25 |
| FR1563413A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1969-04-11 |
| US3523838A (en) | 1970-08-11 |